WO_3气敏薄膜的膜厚对气体响应时间的影响

用简单的模型分析了薄膜气体传感器敏感材料的膜厚对气体响应时间的影响,该模型适用于分析WO3薄膜气体传感器的敏感特性。薄膜气体传感器的敏感特性依赖于气体原子在薄膜内的扩散和与气敏材料的响应;而气体原子在薄膜内的扩散是由薄膜厚度决定的。经过推导得出理论上WO3薄膜对NH3的敏感特性,并将其与实验所得的数据进行比较。最后,给出了WO3薄膜气体传感器的气敏特性与气体在其膜内扩散和膜厚的关系。     

CoMnNiO非晶薄膜热敏电阻

射频溅射CoMnNiO非晶薄膜是一种新型温度敏感材料。文中介绍了这种材料的材料常数、电阻温度特性以及薄膜电阻率与其厚度,指出薄膜老化是由结构驰豫引起的。文末还介绍了CoMnNiO非晶薄膜热敏电阻的设计原理及其制作方法。     

ITO薄膜的气敏特性􀀁

本文研究了胶体法制备的ＩＴＯ薄膜的气敏特性;并同时研究了各种掺杂杂质对ＩＴＯ薄膜的气敏特性的影响。通过实验发现ＩＴＯ薄膜对乙醇气体具有最高的灵敏度,对二氧化氮等也有较好的敏感特性。一般催化剂型掺杂物如贵金属等掺杂杂对提高ＩＴＯ薄膜的灵敏度没有多大帮助。ＩＴＯ薄膜与ＳｎＯ２薄膜相比具有更高的稳定性。ＩＴＯ薄膜的气敏特性既具有表面控制型的特征,又权有体效应气敏材料的敏感特性。     

PN结型硅基TiO_2氧传感器的特性分析

采用薄膜技术研制了一种以硅PN结结构为基底材料的TiO2氧传感器,阐述了该传感器的工作原理、结构设计、工艺流程及其特性。给出了磁控溅射工艺制备银电极及TiO2薄膜的方法,利用X射线衍射(XRD)标定了TiO2薄膜的金红石相晶体结构,通过扫描电镜(SEM)分析了薄膜的表面形貌及晶粒结构,讨论了TiO2的氧敏感机理,测试薄膜的敏感特性及响应特性。实验结果表明:硅PN结基底TiO2氧传感器具有工作温度低、低功耗、体积小、线性化好的优点。     

电阻应变计技术六十年（2）——电阻应变计敏感材料的发展（上）

敏感栅材料电阻应变计的关键元件，其性能将直接影响电阻应变计的各项特性，敏感材料的进展促进了电阻应变计的发展，本文主要介绍金属电阻合金，半导体，薄膜，厚膜等电阻应计敏感栅材料的进展，着重介绍各种金属电阻合金的主要性能。     

多功能复合敏感器件的物理特性分析

叙述多功能敏感器件内在结构的基本特性。并指出利用复合化、薄膜化和集成化等工艺设施 ,可开发多功能敏感材料 ,其潜在的资源丰富 ,可拓宽其应用范围。前景美好。     

阵列化锰铜高压传感器的研制

通过传感器的结构设计、敏感材料和封装材料的研制以及采用新的传感器制备工艺,制作了一种新型的薄膜式锰铜传感器。采用熔融石英材料作为绝缘基板。在绝缘基板上沉积锰铜敏感薄膜。并在敏感薄膜的上面沉积SiO2封装层薄膜。根据"后置"式传感器由阻抗匹配原则,计算出铝靶板中的最高压力为51.68GPa,SiO2封装材料中的压力为35.396GPa。     

氧化钨离子敏感膜的研究

采用射频磁控溅射技术制备了氧化钨离子敏感变色薄膜，借助于电子衍射仪，Ｘ射线衍射仪和ＸＰＳ能谱仪对所制备薄膜的结构和成分进行了分析，并对薄膜的各项离子敏感变色特性进行了测试。     

TiO2薄膜氧敏特性研究

金属氧化物随氧分压不同，有改变电导率这一性质而被广泛地用来制作氧敏传感器，传统的传感器大多是体材料或厚膜材料，工作时需加高温。本文描述的是ＴｉＯ２薄膜材料与Ｐｔ薄膜形成的肖特基势垒高度随氧分压不同而改变的氧敏现象，测定了该肖特基二极管的氧敏特性，并讨论了它的敏感机理。     

聚合物在pH-ISFET研究中的应用

聚合物具有许多无机物没有的特性,已被越来越多地应用到pH-ISFET中,主要体现在4个方面,即pH敏感膜、pH钝化膜、结构材料及封装材料。在介绍pH-ISFET工作机理的基础上,分析了其对功能薄膜的要求,总结、比较了各种用于pH-ISFET的聚合物的特性、制备方法及其应用。     

纳米孔Al2 O3修饰Si基氨气传感器设计

针对Si基微结构气体传感器中Si基与敏感材料之间附着性较差的问题,提出在Si基与敏感材料之间引入纳米孔Al2 O3膜形成新型Si基微结构传感器,利用ANSYS分析软件对微结构进行热分析。采用薄膜工艺、光刻工艺、电化学阳极氧化工艺在Si衬底上制成Si基微结构,采用超声波的方法使聚苯胺敏感材料渗入纳米孔Al2 O3膜中制成气体传感器,并在室温下测试了传感器对氨气的检测特性。结果表明：将纳米孔Al2 O3膜移植到Si基上增加了敏感材料的附着性;传感器对响应时间约为40 s,恢复时间约为960 s,灵敏度随着氨气浓度的增加而增大,并且呈现出良好的线性关系。     

The quartz crystal microbalance: mass sensitivity, viscoelasticity and acoustic amplification

Quartz crystal resonators (QCR) respond to surface mass and material properties of a film coated on their surface. The acoustic load acting at the surface of the resonator is a more general parameter to describe this dependence. It can be represented by a mass factor and an acoustic factor. The quotient of resistance increase and frequency shift can be used for the determination of the acoustic factor, if the loss tangent of the coating is known. Viscoelastic properties of sensitive coatings can enhance the mass sensitivity of quartz crystal microbalance (QCM) sensors. Acoustic factor and acoustic amplification effective during chemical sensing are not the same.

We further suggest a sensor concept, which is based on a bilayer arrangement. Acoustic amplification with a viscoelastic film and chemical sensitivity is separated. With a proper selection of materials, the first layer realizes acoustic amplification while the (chemical) sensitive layer acts as a pure mass detector. Major sensor design parameters are the shear modulus and the thickness of the first layer; major challenge is the preparation of a homogeneous and uniform first film.     

Zirconium tungstate (ZrW/sub 2/O/sub 8/)-based micromachined negative thermal-expansion thin films

Negative expansion materials are relatively rare but promise to be particularly useful in designing thermally sensitive mechanical devices. Although negative thermal expansion (NTE) in bulk materials such as ZrW/sub 2/O/sub 8/ has been extensively studied, this paper reports the first deposition of a NTE material thin film. ZrW/sub x/O/sub y/ films were deposited by electron beam evaporation and reactive cosputtering. The films were processed and patterned for various microstructures. The coefficients of thermal expansion of the deposited thin films were determined by measuring the change in curvature with temperature. It was found that evaporated films but not sputtered films, which were denser than the evaporated films, exhibited NTE. It was also found that NTE behavior occurred across a variety of stoichiometries. Since crystalline ZrW/sub 2/O/sub 8/ and thin film ZrW/sub x/O/sub y/ both have low densities and show negative expansion, it is speculated that similar physical mechanisms, as discussed in the text, are at work. Further, since the deposition conditions of a thin film can often be changed to control density, it is speculated that a wider variety of thin films than bulk crystals might be made to have NTE.     

Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes

We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm²/Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process.     

Time-resolved dynamics of laser-induced micro-jets from thin liquid films

Laser-induced forward transfer (LIFT) is a high-resolution direct-write technique, which can print a wide range of liquid materials without a nozzle. In this process, a pulsed laser initiates the expulsion of a high-velocity micro-jet of fluid from a thin donor film. LIFT involves a novel regime for impulsively driven free-surface jetting in that viscous forces developed in the thin film become relevant within the jet lifetime. In this work, time-resolved microscopy is used to study the dynamics of the laser-induced ejection process. We consider the influence of thin metal and thick polymer laser-absorbing layers on the flow actuation mechanism and resulting jet dynamics. Both films exhibit a mechanism in which flow is driven by the rapid expansion of a gas bubble within the liquid film. We present high-resolution images of the transient gas cavities, the resulting ejection of high aspect ratio external jets, as well as the first images of re-entrant jets formed during LIFT. These observations are interpreted in the context of similar work on cavitation bubble formation near free surfaces and rigid interfaces. Additionally, by increasing the laser beam size used on the polymer absorbing layer, we observe a transition to an alternate mechanism for jet formation, which is driven by the rapid expansion of a blister on the polymer surface. We compare the dynamics of these blister-actuated jets to those of the gas-actuated mechanism. Finally, we analyze these results in the context of printing sensitive ink materials.     

传感器薄膜结构的改进与响应时间的分析

提出了一种具有立体敏感效应的新型气体传感器敏感薄膜结构模型,即将传统的厚度均匀的平面型传感器敏感薄膜改进为由多条半圆柱凸起与多条沟槽相间隔的立体敏感结构。并根据扩散反应理论对新型和传统型2种薄膜结构的传感器响应时间进行了分析与比较,证明新型敏感结构的传感器具有更短的响应时间;分析了半囱柱凸起间距的相对系数对传感器响应时间的影响,得出了最佳取值。     

PI/ CAB 复合介质膜湿敏元件敏感特性研究

本文提出一种新型电容式复合介质膜湿敏元件,它的介质膜是将线性输出、温度特性取向不同的两类感湿介质膜（PI,CAB）互补复合而成,对比试验表明,复合介质膜湿敏元件具有优异的线性输出,并对温度系数,重度性和长期稳定性也有明显改善。     

Cr2O3-Al2O3甲烷敏感材料的研究

采用室温固相合成法制备了不同含量的Cr2O3-Al2O3系列敏感材料,试验研究了Cr2O3催化剂含量和焙烧温度对甲烷气体催化活性的影响,并考察了甲烷传感器灵敏度大小和敏感材料的长期稳定性。结果表明：该法制备的Cr2O3-Al2O3系列敏感材料具有较好的低温催化活性,且随Cr2O3含量的增加,催化剂的低温活性增强。综合考虑敏感材料的催化活性、灵敏度和稳定性,400℃焙烧制备的Cr2O3含量为30％的Cr2O3-Al2O3敏感材料对甲烷低温催化燃烧有较好的催化性能。     

Low-power gas sensors based on work-function measurement in low-cost hybrid flip–chip technology

To implement low-power gas sensors with low component costs, the principle of work-function read out via a hybrid suspended gate FET (SGFET) is being pursued, whereby a freely selectable sensor film undergoes a reversible work-function change corresponding to the build-up of a potential difference on the surface in response to gas adsorption/reaction. This is read out via an ISFET structure. An innovative design which allows cheap manufacturing will be described for the principle that has already been successfully demonstrated. The starting point of the design is a ceramic Al₂O₃ substrate coated with conductor patterns and sensitive materials onto which the FET is mounted in flip–chip technology. By means of the freely selectable sensor film and its preparation method, a wide range of applications can be opened up.