转变观念 开拓工艺工作的新局面

在市场经济条件下，如何搞好工艺工作需要从认识上，思想上，信念上转变观念，正确处理工艺与设计的关系，培养工艺人才，加强宣传工作，努力发展工艺，使工艺工作者不继强健起来，最终实现工艺的目标，为企业创造良好效益，担当起时代赋予的历史使命。     

利用试验设计方法表征微电路工艺设备

随着现代微电路工艺技术和设备性能的提高，许多工艺涉及6个或更多的工艺条件输入，而且这些工艺条件之间存在更多的交互效应。为了表征设备特性并优化工艺条件，文章利用部分要因试验设计方法安排试验方案，实现了对实际氧化工艺特定设备的表征，建立了氧化膜厚度以及厚度均匀性的工艺模型，可进一步用于工艺条件的优化设计。     

更正

联电预言，2008年65nm工艺比重可望超过90nm工艺，引领先进工艺，并表示联电2007年投资65，45nm先进工艺的资本支出绝不手软。     

MEMS工艺集成化设计及其可视化

针对目前MEMS设计复杂，直观性差等问题，提出了工艺集成化设计和可视化的可行性解决方案，对其中的关键技术进行了研究，并基于所提出的方案研究了工艺设计的集成化和可视化的实现技术。首先对MEMS表面加工工艺进行了详细的分析，采用面向过程的方法建立了表面工艺过程的统一模型。基于这一模型，研究了MEMS工艺设计的集成化技术，实现了工艺设计中各种信息的集成化，并设计开发了工艺设计的集成化软件环境。最后，对工艺设计中的二维版图的三维重构算法进行了详细的研究，通过Solil Works API接口的开发，在Solil Works的环境下实现了工艺过程的三维可视化。     

现代电子装联核心理念

前言 电子信息产业是国家的战略性技术力量，要实现国内卓越、国际一流企业的目标，其中一个重要的基础就是工艺，必须高度强调工艺的重要性，强化工艺管理，系统开展工艺管理的研究。     

氧化物墙隔离E,B,C的双极高速晶体管制造工艺

本文介绍了一咱ＩＣ中使用的双极高速晶体管制造工艺，该工艺制造的晶体管的Ｅ、Ｂ、Ｃ均由氧化物墙隔离，消除了ｐｎ结的侧壁结，使双极晶体管的两个ｐｎ结基本上成为平面结，提高晶体管的ｆＴ。本文介绍了该工艺的工艺流程。分析了该工艺结构晶体管的特点，介绍了关键工艺步骤的工艺过程及工艺参数。并给出该工艺制的晶体管的电参数及该工艺的应用前景。     

铅焊接工艺的五个步骤

采用无铅焊接材料，对焊接工艺会产生严重的影响。因此，在开发无铅焊接工艺中，必须对焊接工艺的所有相关方面进行优化。Georze Westby的关于开发无铅焊接工艺的五步法有助于无铅焊接工艺的开发和工艺优化。     

浅谈企业工艺标准化

现代企业的经营机制，对开展工艺标准化工作提出了新的要求。本文从选准工艺标准化工作的着眼点，强化对企业内部贯彻实施工艺标准的监督，以及工艺标准与新产品开发同步等三个方面，对如何开展企业工艺标准化工作进行了探讨 。     

GaN HEMT器件背面减薄工艺研究

阐述GaN HEMT器件背面工艺的步骤以及背面减薄的特点，针对减薄工艺所需的技术支持需求提出临时键合工艺，探讨临时键合工艺中的问题，优化工艺步骤，提出解决方法，采用粗磨加多步精磨的方法得到50μm厚度的超薄晶圆，验证减薄的可行性。     

混合烧成法制取低温PTCR陶瓷材料的研究

本文提出了用混合烧成制取低温ＰＴＣＲ陶瓷材料折工艺方法，该方法和普通工艺相比，不仅降低ＢａＴｉＯ３陶瓷的工艺温区，而且室温电阻率比普通工艺下的要小，即半导化程度比普通工艺要好。     

光谱吸收光纤气体传感技术探讨

简述了光纤气体传感器的基本特性.介绍了几种光谱吸收光纤气体传感的方法.详细阐述了各种传感原理.分析了影响光谱吸收光纤气体传感精度的因素.     

单电子晶体管的制备、集成与电路研究

我们制备出了高温Si单电子晶体管,研究了单电子晶体管的集成原理,实现了14个单电子晶体管的串联集成和2个单电子晶体管的并联集成。同时也研究了单电子晶体管与传统高迁移率晶体管的集成和技术,发现可用单个电子来调控传统晶体管的栅对源漏极电流的控制能力（跨导）,利用单电子晶体管的集成方法,建立了对电荷超敏感的探测技术（包括超敏感的库尔计）,实现了单电子存储器中的单电子过程的探测,并设计了一种新型的多值存储器。     

Wide-Band Reflection-Type Transferred Electron Amplifiers

Stable CW and pulsed linear-reflection-type amplification at C- and X-band frequencies using epitaxial-GaAs transferred electron devices is described. These devices have a doping density-length product (nl) greater than 5 x 10/sup 11/cm/sup -2/. Criteria for avoiding the normal instabilities are discussed with specific regard for the circuit impedance, operating bias-voltage material characteristics, and the device temperature. The active impedance of a stable device has been measured, along with the effects of the package parasitic. These data were utilized to design multiple-tuned wide-band circulator-coupled coaxial-amplifier networks. Instantaneous CW bandwidths of nearly 1 octave have been measured in C-band, and instantaneous bandwidths of 4 GHz have been measured in X-band with single-stage Iinear gains from 6 to 12 dB. A -1-dB gain compression power output of 250 mW, with a saturated power output approaching 1 watt, has been realized from a single device. The noise figure of a single-stage amplifier has been found to be 15 dB. The phase response of a typical amplifier has been found to be linear with a differential phase shift of less than 20/spl deg/ /GHz. The amplitude linearity has been related to third-order intermodulation distortion and found to be comparable to that obtainable from traveling-wave-tube amplifiers (TWTAs). In a two-stage configuration a small-signal gain of 22 dB and a fractional bandwidth of 35 percent have been realized in C-band. A novel scheme for studying the gain response of pulse-biased devices using swept-frequency techniques has been developed. Pulsed amplification has been obtained with a power output of 2 watts at a 5-percent duty cycle with a conversion efficiency of 6 percent and a bandwidth of 1 GHz.     

Design and simulation of High Q MEMS LC-tank for oscillators

This research focuses on the design of a high-performance MEMS LC-tank using a high Q MEMS inductor and capacitor. A two different gap varactor has been used to avoid pull-in voltage at 2.4 GHz. The layout has been done by CoventorWare software. The DC voltage is 2.5 v, which is applied to the plates and results of 2.04 pF could be gained. The Q factor of the varactor is computed at about 557.27, which is good enough to make a low-phase noise VCO. A hollow spiral inductor with a silicon base substrate for compatibility with CMOS technology has been designed. The Greenhouse equation has been used to obtain the dimensions of the inductor. A suspended inductor has been implemented to avoid substrate coupling. The simulation has been done by CoventorWare. The Q factor of the inductor has been calculated using Yue's model. The resultant values of inductance and the Q factor at 2.4 GHz, are 2.89 nH and 27, respectively, which are in good agreement with the results of theoretical computation. The results were verified with the well-documented literature.     

Improved two-wavelength demultiplexing InGaAsP photodetector

The structure of the previously reported InGaAsP two-wavelength demultiplexing photodetector has been inverted to circumvent fabrication problems associated with dissolution of the lower-bandgap quaternary layer during the LPE growth of subsequent higher bandgap layers. In addition, lower doping levels have been achieved in the LPE layers. The result of these modifications has been devices with greatly improved optical and electrical characteristics. The long-wavelength cutoff has been extended to 1.6 μm.     

Quantum Transport Simulation of Experimentally Fabricated Nano-FinFET

We have utilized the contact-block-reduction (CBR) method, which we extended to allow a charge self-consistent scheme, to simulate experimentally fabricated 10-nm-FinFET device. The self-consistent CBR simulator has been modified to simulate devices with channels along arbitrary crystallographic orientation. A series of fully quantum-mechanical transport simulations has been performed. First, the fin extension length and doping profile have been calibrated to match the experimental data. The process control window for the threshold voltage as a function of fin extension has been extracted for the considered device. Then, a set of transfer characteristics and gate leakage currents have been calculated for different drain voltages. The simulation results have been found to be in good agreement with the experimental data in the subthreshold regime. The device turn-off and turn-on behavior has been examined for different fin widths: 12 (experimental), 10, 8, and 6 nm. Finally, the subthreshold slope degradation at high temperatures has been studied     

Design and development of a novel high-transconductance pH-ISFET (ion-sensitive field-effect transistor)-based glucose biosensor

A glucose biosensor based on a high-transconductance ISFET transduction element with aspect ratio (channel width/length) of 400 has been developed. This biosensor is an N-channel enhancement mode device with interdigitated drain-source geometry, fabricated by the NMOS process, in which glucose oxidase (GOD) enzyme has been immobilized over the silicon dioxide-silicon nitride dual-dielectric gate. The device has been operated in the active mode by applying a gate voltage through Ag/AgCl reference electrode. Electrical characterization has been performed in terms of I-V characteristics like output characteristics and leakage current. The pH response characteristics have been measured and the pH sensitivity factor has been found to be?≥?50?mV/decade. Device characterization has also been performed by a signal conditioning circuit developed for direct readout of pH from the ISFET device. Temperature behaviour and drift phenomenon have been investigated.

The glucose response characteristics of the ISFET have been determined, without and with the glucose oxidase enzyme layer. Improvement of the glucose sensitivity by deposition of the enzyme layer has been studied and cross-sensitivity of the device towards urea has been examined. The advantage of the high transconductance was evident from the ability of the sensor to detect small glucose concentrations without the enzyme layer. The paper describes the design, fabrication and characterization of the sensor.     

重油隧道窑的红外温度测量

在分析重油隧道窑工况的基础上，分析了窑内烟气、燃烧物发射率、窑墙效应、环境温度对红外测温的影响以及热电偶测温的缺点，采取了相应的措施。利用中国发现专科实现了传感器输出信号的一致性。给出了传感器在重滑隧道窑现场使用２．５年后的复校数据。最后，估算出了用红外温度计替代热电偶测窑温产生的经济效益。     

阵列雷达幅度和差单脉冲最优设计

针对阵列天线跟踪雷达研究了幅度和差单脉冲最优设计问题,其核心就是寻找最优的波束偏置角,在保证和波束不分裂前提下使得雷达测角精度最高.本文将该问题建模为带约束的优化问题,并进行数值求解,通过参数拟合得到一般的规律,即最优的偏置角为静态方向图波束宽度的0.47倍,该结论与反射面单脉冲天线的结论相近,根据最优偏置角得到和、差波束最优权矢量.     

压电陶瓷激励下的超声悬浮特性研究

声悬浮现象已被众多实验所证实,但复杂的结构及压电-固体-流体耦合问题很难再利用解析法来模拟声场,通过Ansys数值模拟和实验验证2方面证实了超声悬浮具有承载能力。建立的数学模型中,使用2维轴对称模型来进行电-固-气的耦合不仅能减少运算时间,提高运算精度,还能忽略掉激振盘的非轴对称模态,给超声悬浮的研究带来了方便。