World's first large size 77‐inch transparent flexible OLED display

Large flexible organic light‐emitting diode (OLED) display provides various electronic applications such as curved, bendable, rollable, and commercial display, because of its thinness, light weight, and design freedom. In this work, the process flow and key technologies to fabricate the world's first large size 77‐inch transparent flexible OLED display are introduced. “White OLED on TFT + color filter” method is used to fabricate the aforementioned display. On both thin‐film transistor and color filter substrates, transparent polyimide (PI) was used as plastic substrate with multi‐barrier. In case of a transparent flexible display, the multi‐barrier is required for the additional consideration to overcome the decrease of transmittance due to the difference in refractive index of the conventional multi‐barrier. We developed the special multi‐barrier to increase transparency with superior water vapor transition rate characteristic. The optimized amorphous indium gallium zinc oxide thin‐film transistors were employed on the multi‐barrier, and it shows the highly uniform electrical performance and reliability on plastic substrate. Also, the typical panel failure mechanism during laser lift‐off process caused by a particle in PI is studied, and a sacrificial layer was suggested between PI and a carrier glass to reduce the panel failure. Finally, we successfully realized the world's first 77‐inch transparent flexible OLED display with ultra‐high‐definition resolution, which can be rolled up to a radius of 80 mm with a transmittance of 40%.     

Latest advances in substrates for flexible electronics

Abstract— Recent advances in both organic‐ and inorganic‐based electronics processed on flexible substrates offer substantial rewards in terms of being able to develop displays that are thinner, lighter, robust, and conformable, and can be rolled away when not required. In addition, plastic‐based substrates coupled with the recent developments in solution deposition and ink‐jet printing for laying down OLED materials and active‐matrix thin‐film‐transistor (TFT) arrays open up the possibility of cost‐effective processing in high volumes using roll to roll (R2R) processing. To replace glass, however, a plastic substrate needs to be able to offer some or all of the properties of glass, i.e., clarity, dimensional stability, thermal stability, barrier, solvent resistance, and low coefficient of thermal expansion (CTE) coupled with a smooth surface. In addition, a conductive layer may be required. No plastic film offers all these properties so any plastic‐based substrate will almost certainly be a multilayer composite structure. This paper will discuss the issues associated with selecting plastic materials, contrast the various options, and highlight how to gain optimum performance through process control. This will be illustrated with examples of film in use in flexible electronic applications.     

Sphere‐supported thin‐film electroluminescence: A new platform technology for displays and lighting

Abstract— Currently, powder electroluminescence is used for low‐brightness flexible lamps offering durable plastic‐based lighting solutions principally for low‐ambient light conditions where lighting or backlighting is required. Sphere‐supported thin‐film electroluminescence (SSTFEL) promises dramatic new capability in both flexible lamps and displays owing to its high brightness and long‐life capability. SSTFEL is based on robust thin‐film phosphors deposited on spherical ceramic dielectric particles which are embedded in a thin plastic sheet. A printing approach permits versatile, low‐cost manufacturing of patterned SSTFEL devices and eliminates the need for high‐temperature substrates.     

Impact of bending on flexible metal oxide TFTs and oscillator circuits

Thin‐film circuits on plastic capable of high‐frequency signal generation have important applications in large‐area, flexible hybrid systems, enabling efficient wireless transmission of power and information. We explore oscillator circuits using zinc‐oxide thin‐film transistors (ZnO TFTs) deposited by the conformal, layer‐by‐layer growth technique of plasma‐enhanced atomic layer deposition. TFTs on three substrates—glass, 50‐µm‐thick freestanding polyimide, and 3.5‐µm‐thick spin‐cast polyimide—are evaluated to identify the best candidate for high‐frequency flexible oscillators. We find that TFTs on ultrathin plastic can endure bending to smaller radii than TFTs on commercial 50‐µm‐thick freestanding polyimide, and their superior dimensional stability furthermore allows for smaller gate resistances and device capacitances. Oscillators on ultrathin plastic with minimized parasitics achieve oscillation frequencies as high as 17 MHz, well above the cutoff frequency f_T. Lastly, we observe a bending radius dependence of oscillation frequency for flexible TFT oscillators and examine how mitigating device parasitics benefits the oscillator frequency versus power consumption tradeoff.     

Discharge properties and chemical stability of SrZrO films

Abstract— MgO thin film is currently used as a surface protective layer for dielectric materials because MgO has a high resistance during ion sputtering and exhibits effective secondary electron emission. The secondary‐electron‐emission coefficient γ of MgO is high for Ne ions; however, it is low for Xe ions. The Xe content of the discharge gas of PDPs needs to be raised in order to increase the luminous efficiency. Thus, the development of high‐γ materials replacing MgO is required. The discharge properties and chemical surface stability of SrO containing Zr (SrZrO) as the candidate high‐γ protective layer for noble PDPs have been characterized. SrZrO films have superior chemical stability, especially the resistance to carbonation because of the existence of a few adsorption sites due to their amorphous structure. The firing voltage is 60 V lower than that of MgO films for a discharge gas of Ne/Xe = 85/15 at 60 kPa.     

Temporary bond—debond technology for high‐performance transistors on flexible substrates

Abstract— A processing technology based upon a temporary bond—debond approach has been developed that enables direct fabrication of high‐performance electronic devices on flexible substrates. This technique facilitates processing of flexible plastic and metal‐foil substrates through automated standard semiconductor and flat‐panel tool sets without tool modification. The key to processing with these tool sets is rigidifying the flexible substrates through temporary bonding to carriers that can be handled in a similar manner as silicon wafers or glass substrates in conventional electronics manufacturing. To demonstrate the power of this processing technology, amorphous‐silicon thin‐film‐transistor (a‐Si:H TFT) backplanes designed for electrophoretic displays (EPDs) were fabricated using a low‐temperature process (180°C) on bonded‐plastic and metal‐foil substrates. The electrical characteristics of the TFTs fabricated on flexible substrates are found to be consistent with those processed with identical conditions on rigid silicon wafers. These TFTs on plastic exhibit a field‐effect mobility of 0.77 cm²/V‐sec, on/off current ratio >10⁹ at Vds = 10 V, sub‐threshold swing of 365 mV/dec, threshold voltage of 0.49 V, and leakage current lower than 2 pA/μm gate width. After full TFT‐array fabrication on the bonded substrate and subsequent debonding, the flexible substrate retains its original flexibility; this enables bending of the EPD display without loss in performance.     

A flexible 2.1‐in. active‐matrix electrophoretic display with high resolution and a thickness of 100 μm

Abstract— A paper‐thin QVGA, flexible 2.1‐in. active‐matrix electrophoretic display (AMEPD) that features 100‐μm thick and a 192‐ppi resolution has been developed. An LTPS‐TFT backplane with integrated peripheral driver circuits was first fabricated on a glass substrate and then transferred to a very thin (30‐μm) plastic film by employing surface‐free technology by laser ablation/annealing (SUFTLA®). A micro‐encapsulated electrophoretic imaging sheet was laminated on the backplane. A supporting substrate was used to support the LTPS‐TFT backplane. Fine images were successfully displayed on the rollable AM‐EPD. The integrated driver circuits dramatically reduce the number of external connection terminals, thus easily boosting the reliability of electrical connections even on such a thin plastic film.     

Low‐temperature amorphous‐silicon backplane technology development for flexible displays in a manufacturing pilot‐line environment

Abstract— A low‐temperature amorphous‐silicon (a‐Si:H) thin‐film‐transistor (TFT) backplane technology for high‐information‐content flexible displays has been developed. Backplanes were integrated with frontplane technologies to produce high‐performance active‐matrix reflective electrophoretic ink, reflective cholesteric liquid crystal and emissive OLED flexible‐display technology demonstrators (TDs). Backplanes up to 4 in. on the diagonal have been fabricated on a 6‐in. wafer‐scale pilot line. The critical steps in the evolution of backplane technology, from qualification of baseline low‐temperature (180°C) a‐Si:H process on the 6‐in. line with rigid substrates, to transferring the process to flexible plastic and flexible stainless‐steel substrates, to form factor scale‐up of the TFT arrays, and finally manufacturing scale‐up to a Gen 2 (370 × 470 mm) display‐scale pilot line, will be reviewed.     

Robust flexible LCDs with paintable technology

Abstract— In this article, second‐generation liquid‐crystal displays (LCDs) made by Paintable LCD technology is presented. With this technology, LCDs are manufactured by a sequence of simple coating and UV curing processes. Since the process can be carried out on plastic substrates and the stack of optical layers is only tens of micrometers thick, the resulting LCDs are ultra‐thin and flexible.     

Oxide engineering of ZnO thin‐film transistors for flexible electronics

Abstract— In this paper, we show that ZnO thin‐film transistors (TFTs) are potentially a higher performance alternative to organic and amorphous‐Si TFTs for macroelectronics on plastic substrates. Specifically, we fabricated nanocrystalline ZnO thin‐film transistors using low‐temperature processing, compatible with flexible electronics on plastic substrates. The ZnO semiconductor was rf magnetron sputtered, and the Al₂O₃ gate dielectric was deposited either by electron‐beam evaporation or atomic layer deposition. By controlling the partial pressure of oxygen pO₂) during ZnO sputtering, we could engineer the field‐effect mobility of ZnO transistors to be between 2 and 42 cm²/V‐sec, attractive for high‐performance electronic applications. We contend that pO₂ controls the oxygen‐vacancy content or stoichiometry of ZnO, and that allows control of transistor field‐effect mobility. Although most of the devices described here were fabricated on Si substrates, devices we made on a thin (50 μm thick) polyimide substrate had about equivalent performance, affirming the compatibility of our processes with plastic substrates. Finally, we show that properties of our nanocrystalline ZnO transistors can be explained by transport models that account for grain‐boundary trapping of mobile carriers.     

A transparent sheet display by plastic MEMS

Abstract— A new type of color‐image display pixel based on MEMS (microelectromechanical systems) technology of plastic materials is presented. The mechanism for making color is optical interference using a Fabry‐Perot interferometer. A thin sheet of PEN (polyethylene naphthalate) with a metal half‐mirror was laminated over a glass or PEN substrate with an optical cavity inside. The electrostatically controlled deformation of the PEN film changes the color of the transmitting light by interference within the optical cavity. Color pixels of three primary colors (red, green, and blue) were successfully developed and demonstrated, with a driving voltage ranging from 80 to 120 Vdc. Thanks to the mechanical flexibility of the PEN films, the display could operate even when placed on a curved surface.     

Highly reliable a‐IGZO TFTs on a plastic substrate for flexible AMOLED displays

We have successfully reduced threshold voltage shifts of amorphous In–Ga–Zn–O thin‐film transistors (a‐IGZO TFTs) on transparent polyimide films against bias‐temperature stress below 100 mV, which is equivalent to those on glass substrates. This high reliability was achieved by dense IGZO thin films and annealing temperature below 300 °C. We have reduced bulk defects of IGZO thin films and interface defects between gate insulator and IGZO thin film by optimizing deposition conditions of IGZO thin films and annealing conditions. Furthermore, a 3.0‐in. flexible active‐matrix organic light‐emitting diode was demonstrated with the highly reliable a‐IGZO TFT backplane on polyimide film. The polyimide film coating process is compatible with mass‐production lines. We believe that flexible organic light‐emitting diode displays can be mass produced using a‐IGZO TFT backplane on polyimide films.     

Fabrication of flexible organic light‐emitting‐diode display with a flexible color filter driven by In—Ga—Zn—Oxide TFTs

Abstract— A novel flexible active‐matrix organic light‐emitting‐diode (OLED) display fabricated on planarized stainless—used‐steel substrates with a resolution of 85 dpi in a 4.7‐in. active area has been demonstrated. Amorphous indium—gallium—zinc—oxide thin‐film transistors were used as the backplane for the OLED display with high device performance, high electrical stability, and long lifetime. A full‐color moving image at a frame frequency of 60 Hz was also realized by using a flexible color filter directly patterned on a plastic substrate with a white OLED as the light source.     

High‐performance MgO thin films for PDPs with a high‐rate sputtering‐deposition process

Abstract— A high‐rate sputtering‐deposition process for MgO thin films for PDP fabrication was recently developed. The deposition rate of the MgO thin film was about 300 nm/min which shows the possibility of production‐line application. The MgO film deposited in this work has a higher density than that of other deposition processes such as electron‐beam deposition and shows good discharge characteristics including firing voltage and discharge formation. These were achieved by controlling the stoichiometry and/or the impurity doping during the sputtering process.     

Relationship between exo‐electron currents from MgO thin film and statistical delay time in ACPDPs

Abstract— The exo‐electron currents from a ACPDP test panel with or without MgO crystals sprayed on MgO film were measured directly after eliminating of the wall‐voltage effect. An inverse relationship was established between the statistical delay time and exo‐electron currentfrom the MgO cathode film. The spraying of MgO crystals on MgO thin film was observed to reduce the statistical delay time dramatically even for the same exo‐electron currents measured. The shift of the inverse curve may be attributed to an increased discharge success probability by the MgO crystals sprayed.     

Flexible ferroelectric liquid‐crystal devices containing fine polymer fibers

A new flexible ferroelectric liquid‐crystal‐display device with gray‐scale capability has been created by using submicrometer‐diameter polymer fibers. The polymer fibers, which are formed by photopolymerization of aligned monomer molecules in liquid crystal, align the ferroelectric liquid crystal and mechanically support two flexible thin plastic substrates. The composite film made of liquid crystal and polymer with a thickness of 2 μm was formed between the plastic substrates by using a fabrication method consisting of coating, lamination, and ultraviolet irradiation processes without the conventional gap‐forming and injection processes. The fabricated flexible device revealed gray‐scale capability due to the change in spatial distribution of micrometer‐sized binary‐switching liquid‐crystal domains. From the polarizing microscope observation, it was found that the switching domains are generated and expanded from the areas with poor polymer density. The experimental results indicated that the polymer fibers spatially modulate the threshold voltage for molecular switching. Our device exhibits great potential for flexible large‐sized light‐weight motion‐image displays.     

Development of flexible organic light‐emitting diode on barrier film and roll‐to‐roll manufacturing

To come out with a successful organic light‐emitting diode (OLED) lighting business, it is very important to have clear differentiation of OLED from LEDs. Flexible OLED has merits, such as capability to be mounted on the curved wall, which is not easy for LEDs to achieve the feature. There are several approaches to make flexible OLEDs especially among those plastic barrier films that can bring high level of flexibility, which could not be achieved by any conventional lighting method. In this paper, barrier films with various water vapor transmission rate values, including 10^{? 6} order, are applied, and the conditions to have almost no dark spot growth under 85 °C and 85% high temperature/humidity test are shown. Flexible OLED panels are manufactured with the world's first roll‐to‐roll equipment using plastic barrier film.     

Suspension‐deposited carbon‐nanotube networks for flexible active‐matrix displays

Abstract— The unique properties of carbon nanotubes (CNTs) promise innovative solutions for a variety of display applications. The CNTs can be deposited from suspension. These simple and low‐cost techniques will replace time‐consuming and costly vacuum processes and can be applied to large‐area glass and flexible substrates. Single‐walled carbon nanotubes (SWNTs) have been used as conducting and transparent layers, replacing the brittle ITO, and as the semiconducting layer in thin‐film transistors (TFTs). There is no need for alignment because a CNT network is used instead of single CNTs. Both processes can be applied to glass and to flexible plastic substrates. The transparent and conductive nanotube layers can be produced with a sheet resistance of 400 Ω/□ at 80% transmittance. Such layers have been used to produce directly addressed liquid‐crystal displays and organic light‐emitting diodes (OLED). The CNT‐TFTs reach on/off ratios of more than 10⁵ and effective charge‐carrier mobilities of 1 cm²/V‐sec and above.     

Amorphous‐silicon thin‐film transistors made at 280°C on clear‐plastic substrates by interfacial stress engineering

Abstract— A process temperature of ～300°C produces amorphous‐silicon (a‐Si) thin‐film transistors (TFTs) with the best performance and long‐term stability. Clear organic polymers (plastics) are the most versatile substrate materials for flexible displays. However, clear plastics with a glass‐transition temperature (T_g) in excess of 300°C can have coefficients of thermal expansion (CTE) much larger than that of the silicon nitride (SiN^x) and a‐Si in TFTs deposited by plasma‐enhanced chemical vapor deposition (PECVD). The difference in the CTE that may lead to cracking of the device films can limit the process temperature to well below that of the T_g of the plastic. A model of the mechanical interaction of the TFT stack and the plastic substrate, which provides design guidelines for avoid cracking during TFT fabrication, is presented. The fracture point is determined by a critical interfacial stress. The model was used to successfully fabricate a‐Si TFTs on novel clear‐plastic substrates with a maximum process temperature of up to 280°C. The TFTs made at high temperatures have higher mobility, lower leakage current, and higher stability than TFTs made on conventional low‐T_g clear‐plastic substrates.     

Mercury‐free 18‐in. flat fluorescent lamp with good uniformity

Abstract— We have developed an 18‐in. 287 × 359‐mm mercury‐free flat fluorescent lamp (FFL) having a new structure that utilizes dielectric barrier discharge and contains pure xenon gas. The electro‐optical characteristics have been analyzed. The surface luminance of the lamp having a diffuser sheet is 5600 cd/m² and the luminance uniformity is 92% at an applied voltage of 1050 Vrms and an applied frequency of 20 kHz in the form of a sine wave.