Parameter comparison for low-noise Mo/Au TES bolometers

We describe a comparative investigation of the parameters of MoAu-bilayer TES bolometers designed for infrared detectors. A set of devices with variations in geometry were fabricated at the NASA/GSFC detector development facility. These detectors have different bilayer aspect ratios (providing differing normal state resistances and current densities), and have varieties of normal metal regions to study the effects of geometry on noise. These normal metal regions are oriented either parallel to or transverse to the direction of current flow, or both. The lowest noise detectors are found to have normal metal regions oriented transversely. For about a dozen different devices, we have measured a large set of parameters by means of a suite of tests. These include complex impedance measurements to derive time constants; IV curves to determine resistance and power; thermal conductance measurements; noise measurements as a function of device resistance; and direct resistance vs. temperature measurements.     

Stabilization and operation of porous silicon photonic structures from near-ultraviolet to near-infrared using high-pressure water vapor annealing

The effects of high-pressure water vapor annealing (HWA), electrochemical oxidation, and substrate resistivity on the properties of porous silicon Bragg mirrors and photoluminescent cavities have been investigated. The photonic structures treated by HWA show very good stability upon ageing in air whereas as-formed structures exhibit significant drifts in their optical properties. Using HWA with lightly doped porous silicon, the structure transparency is enhanced sufficiently to enable the possible photonic operation in the near-ultraviolet. However, the index contrast achievable with these structures is very low in the visible and near-infrared. Useful index contrasts in this range can be achieved with either lightly doped porous silicon treated by electrochemical oxidation and HWA or heavily doped porous silicon treated by HWA.     

Dilute Al-Mn Alloys for Low-Temperature Device Applications

We discuss results on the superconducting, electron-transport, and tunneling properties of Al doped with Mn in the range of 1000 to 3000 ppm. We demonstrate that the critical temperature of Al can be systematically reduced to below 50 mK. Films are prepared by sputter deposition, and show values of d(ln R)/d(ln T) of ～500, indicating sharp superconducting transitions. Al-Mn/I/Al-Mn tunnel junctions show low sub-gap conductance and BCS-like characteristics. Our results in general suggest that the material is of interest for transition-edge sensors operating in the 100 mK regime and superconductor/insulator/superconductor (S/I/S) and normal/insulator/ superconductor (N/I/S) devices, in the latter case where heavily doped Al-Mn can replace the normal metal.     

Characterizing the Superconducting-to-Normal Transition in Mo/Au Transition-Edge Sensor Bilayers

We are developing arrays of Mo/Au bilayer transition-edge sensors (TES’s) for future X-ray astronomy missions such as NASA’s Constellation-X. The physical properties of the superconducting-to-normal transition in our TES bilayers, while often reproducible and characterized, are not well understood. The addition of normal metal features on top of the bilayer are found to change the shape and temperature of the transition, and they typically reduce the unexplained ‘excess’ noise. In order to understand and potentially optimize the properties of the transition, we have been studying the temperature, widths and current dependence of these transitions. We report on the characterization of devices both deposited on silicon substrates and suspended on thin silicon nitride membranes. This includes key device parameters such as the logarithmic resistance sensitivity with temperature α, and the logarithmic resistance sensitivity with current β, and their correlation with excess noise.      

薄膜厚度对Au/ZnO/n+-Si薄膜压敏电阻器阈值电压的影响

本文采用直流磁控溅射法和多次沉积与掩膜技术,在n+Si(100)衬底上制备了一系列厚度不同的ZnO薄膜,表面镀Au的探针与ZnO/n+-Si构成了一系列ZnO层厚不同的Au/ZnO/n+-Si薄膜压敏电阻器.利用X射线衍射确定沉积的ZnO薄膜为高度c轴(0002)取向的晶体薄膜,利用紫外-可见透射光谱对沉积的ZnO薄膜...     

Generation of Charge Carriers in Uniformly Heated Si–Ge Films Heavily Doped with Titanium

We have studied the generation of charge carriers and development of the electromotive force (emf) in uniformly heated n-type Si–Ge films heavily doped with titanium obtained by chemical-vapor deposition on p-type silicon substrates. A maximum emf value of ～3 mV was observed at temperatures within 500–600 K for dark short-circuit currents ～0.5–1 μA, the value of which increased with the temperature to reach ～3 μA at 800 K.     

Suppression of excess noise in Transition-Edge Sensors using magnetic field and geometry

We report recent progress at NIST on Mo/Cu Transition-Edge Sensors (TESs). While the signal-band noise of our sensors agrees with theory, we observe excess high-frequency noise. We describe this noise and demonstrate that it can be strongly suppressed by a magnetic field perpendicular to the plane of the sensor. Both the excess noise and =(T/R)(dR/dT) depend strongly on field so our results show that accurate comparisons between devices are only possible when the field is well known or constant. We also present results showing the noise performance of TES designs incorporating parallel and perpendicular normal metal bars, an array of normal metal islands, and in wedge-shaped devices. We demonstrate significant reduction of high-frequency noise with the perpendicular bar devices at the cost of reduced . Both the bars and the magnetic field are useful noise reduction techniques for bolometers.     

Space charge analysis in doped zinc phthalocyanine thin films

We present an improved method for the determination of the space charge density in organic semiconductors used as active layers in Schottky barriers. These measurements provide a powerful tool for the interpretation of basic properties such as the rectifying effect, doping process and carrier trapping mechanisms of films together with a way to assess the potential for sensor applications. Metal/molecular semiconductor Schottky junctions were prepared on zinc phthalocyanine layers doped by a controlled exposure to the ambient air. The organic material is deposited on aluminium or heavily doped silicon substrates, in order to make a Schottky barrier (film thickness around 1 μm). An ohmic contact is obtained by a gold deposition on the strongly doped side of the molecular material. We have investigated the current-voltage and capacitance-voltage characteristics. The results are interpreted in terms of a space charge region at the interface with the substrate, followed by an extended semi-insulating layer.The contribution of these two regions to the total impedance is analyzed in well improved conditions of measurements.     

Humid environment stability of low pressure chemical vapor deposited boron doped zinc oxide used as transparent electrodes in thin film silicon solar cells

The stability in humid environment of low pressure chemical vapor deposited boron doped zinc oxide (LPCVD ZnO:B) used as transparent conductive oxide in thin film silicon solar cells is investigated. Damp heat treatment (exposure to humid and hot atmosphere) induces a degradation of the electrical properties of unprotected LPCVD ZnO:B layers. By combining analyses of the electrical and optical properties of the films, we are able to attribute this behavior to an increase of electron grain boundary scattering. This is in contrast to the intragrain scattering mechanisms, which are not affected by damp heat exposure. The ZnO stability is enhanced for heavily doped films due to easier tunneling through potential barrier at grain boundaries.     

2.45 GHz 0.8 mW voltage-controlled ring oscillator (VCRO) in 28 nm fully depleted silicon-on-insulator (FDSOI) technology

MOS bulk transistor is reaching its limits: sub-threshold slope (SS), drain induced barrier lowering (DIBL), threshold voltage (VT) and VDD scaling slowing down, more power dissipation, less speed gain, less accuracy, variability and reliability issues. Fully depleted devices are mandatory to continue the technology roadmap. FDSOI technology relies on a thin layer of silicon that is over a buried oxide (BOx). Called ultra thin body and buried oxide (UTBB) transistor, FDSOI transistors correspond to a simple evolution from conventional MOS bulk transistor. The capability to bias the back-gate allows us to implement calibration techniques without adding transistors in critical blocks. We have illustrated this technique on a very low power voltage-controlled oscillator (VCO) based on a ring oscillator (RO) designed in 28 nm FDSOI technology. Despite the fact that such VCO topology exhibits a larger phase noise, this design will address aggressively the size and power consumption reduction. Indeed we are using the efficient back-gate biasing offered by the FDSOI MOS transistor to compensate the mismatches between the different inverters of the ring oscillator to decrease jitter and phase noise. We will present the reasons which led us to use the FDSOI technology to reach the specifications of this PLL. The VCRO exhibits a 0.8 mW power consumption, with a phase noise about --94 dBc/Hz@1 MHz.     

Solution-processed ambipolar organic field-effect transistors and inverters

There is ample evidence that organic field-effect transistors have reached a stage where they can be industrialized, analogous to standard metal oxide semiconductor (MOS) transistors. Monocrystalline silicon technology is largely based on complementary MOS (CMOS) structures that use both n-type and p-type transistor channels. This complementary technology has enabled the construction of digital circuits, which operate with a high robustness, low power dissipation and a good noise margin. For the design of efficient organic integrated circuits, there is an urgent need for complementary technology, where both n-type and p-type transistor operation is realized in a single layer, while maintaining the attractiveness of easy solution processing. We demonstrate, by using solution-processed field-effect transistors, that hole transport and electron transport are both generic properties of organic semiconductors. This ambipolar transport is observed in polymers based on interpenetrating networks as well as in narrow bandgap organic semiconductors. We combine the organic ambipolar transistors into functional CMOS-like inverters.     

Structure and 1/f noise of boron doped polymorphous silicon films

The influence of structure variation on the 1/f noise of nanometric boron doped hydrogenated polymorphous silicon (pm-Si:H) films was investigated. The films were grown by the conventional radio frequency plasma enhanced chemical vapor deposition (PECVD) method. Raman spectroscopy was used to reveal the crystalline volume fraction (X(c)) and crystal size of the pm-Si:H. The measurement of optical and structure properties was carried out with spectroscopic ellipsometry (SE) in the Tauc-Lorentz model. A Fourier transform infrared (FTIR) spectrometer was used to characterize the presence of nanostructure-sized silicon clusters in pm-Si:H film deposited on KBr substrate. The electrical properties of the films were measured using evaporated coplanar nickel as the electrode. A semiconductor system was designed to obtain the 1/f noise of pm-Si:H film as well as that of amorphous and microcrystalline silicon films. The results demonstrate that the 1/f noise of pm-Si:H is nearly as low as that of microcrystalline silicon and much lower than that of amorphous silicon. The disorder to order transition mechanism of crystallization was used to analyze the decrease of noise compared with amorphous silicon.     

Silicon-gap Fabry-Perot filter for far-infrared wavelengths

We developed a far-infrared Fabry-Perot filter constructed from a single silicon substrate. The limiting resolving power caused by beam divergence of a silicon-gap Fabry-Perot filter is approximately 10 times higher than that of a vacuum-gap Fabry-Perot filter because of the large index of refraction of silicon. The filter thus permits compact, high-throughput optical systems. Metal mesh patterns microlithographed on each face provide enhanced, wavelength-dependent face reflectivity. We tested the performance of filters with metal mesh patterns consisting of inductive crosses and capacitive squares. A Fabry-Perot filter developed for a rocketborne astrophysics experiment with a capacitive square metal mesh pattern achieves a resolving power of λ/Δλ(FWHM) =160 at λ= 158 μm, with a peak transmittance of 37% over an active aperture of 6.9 mm for an ?/3.8 optical beam at 15° incidence. The absorptivity of a 240-μm thick silicon substrate patterned with capacitive metal mesh is A ? 1% per pass, including loss in both the silicon and the metal mesh.     

Approaching the fundamental noise limit in Mo/Au TES bolometers with transverse normal metal bars

Recent efforts in the Transition Edge Sensor (TES) bolometer/calorimeter community have focused on developing detectors whose noise properties are near the fundamental limits. These include the in-band phonon noise, the out-of-band Johnson noise, and the 1/f noise. We have investigated the noise performance of Mo/Au-bilayer TES bolometers designed for infrared detectors. These detectors use normal metal regions for the suppression of excess noise, which are oriented either parallel to (“bars”) or transverse to (“stripes”) the direction of current flow. Two nearly identical detectors, one with stripes and one with bars, were fabricated at the NASA/GSFC detector development facility. Significantly lower noise is found with the normal metal regions oriented transversely. We compare the detailed noise measurement and quantitative analysis of the noise level in each device as a function of the detector resistance. Our preliminary result is that the best detector features only moderate excess noise in both the in-band region and in the out-of-band region. This noise performance is suitable for instruments with multiplexed TES arrays, such as GSFC's FIBRE and SAFIRE.     

Top-down processed silicon nanowires for thermoelectric applications

50 nm wide n-type silicon nanowires have been manufactured by using a top-down process in order to investigate the thermoelectric properties of silicon nanowire. Nanowire test structures with platinum heaters and temperature sensors were fabricated. The extracted temperature coefficient of resistance (TCR) of the temperature sensors was 786.6 PPM/K. Also, the extracted Seebeck coefficient and power factor of the 50 nm wide phosphorus doped n-type silicon nanowires were -118 miroV/K and 2.16 mW x K(-2) x m(-1).     

Spin injection in spin FETs using a step-doping profile

We investigate the effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well in spin field-effect transistors using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal-semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhanced proportionally to the total current, and the variation of current spin polarization does not exceed 20%.     

GeO<Subscript>2</Subscript>-rich low-loss single-mode optical fibers

We have optimized the MCVD process for the fabrication of single-mode optical fibers with a heavily doped (up to 30 mol % GeO₂) core for Raman lasers and amplifiers. Removing the central index dip in the core, we were able to reduce the optical losses in such fibers to the lowest level for the MCVD technology.     

Stability of short, single-mode erbium-doped fiber lasers

We conducted a detailed study of the stability of short, erbium-doped fiber lasers fabricated with two UV-induced Bragg gratings written into the doped fiber. We find that the relative intensity noise of single-longitudinal-mode fiber grating lasers is approximately 3 orders of magnitude lower than that of a single-frequency 1.523-mum helium-neon laser. The frequency noise spectrum contains few resonances, none of which exceeds 0.6 kHz/Hz(1/2) rms; the integrated rms frequency noise from 50 Hz to 63 kHz is 36 kHz. We also demonstrate a simple method for monitoring the laser power and number of oscillating modes during laser fabrication.     

Phase-sensitive parametric amplifiers in silicon waveguides

The gain and noise of phase-sensitive amplifiers (PSAs) in silicon waveguides based on non-degenerate four-wave mixing (FWM) were investigated. Numerical results show that the PSA in a silicon waveguide offers higher gain and lower amplitude noise with special initial relative phase and suitable pump power. The impacts of nonlinear losses caused by two-photon absorption and free-carrier absorption are also presented by varying free carrier lifetime; short free carrier lifetime should be chosen for optimal performance. Through silicon PSAs, amplitude noise and phase noise of a signal can be suppressed simultaneously.