Preparation of a-C:H/a-C:H:Si:O and a-C:H/a-C:H:Si multilayer coatings by PACVD

Carbon based multilayer coatings were prepared by plasma assisted chemical vapor deposition (PACVD) using methane (CH₄) and hexamethyldisiloxane (HMDSO) or methane and tetramethylsilane (TMS) as precursors. These coatings were deposited in a modified plasma nitriding plant operated at relatively high working pressures of 20 Pa. The multilayer design consisted of a-C:H and a-C:H:Si:O or a-C:H and a-C:H:Si single layers, respectively. The number of single layers and the material of the top layer were varied at constant total coating thicknesses. These multilayer coatings were investigated with regard to their morphology and composition as well as indentation hardness, abrasive wear, lubricant free friction and wetting behavior via contact angle measurements. The multilayer coatings exhibited lower wear rates and higher hardness values than a-C:H:Si:O or a-C:H:Si single layers and lower friction coefficients than pure a-C:H coatings under unlubricated test condition. Utilizing duplex processes, combining plasma nitriding pre-treatment and a following coating deposition, the adhesion of the multilayer coatings on high speed and cold working steel substrates could be considerably improved.     

a-C:F:H films prepared by PECVD

Fluorinated amorphous hydrogenated a-C:F:H carbon thin films were deposited using radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) reactor with CF4 and CH4 as source gases and were annealed in a N2 atmosphere. The properties of these films were evaluated by FTIR spectrometry, UV-VIS spectrophotometry and single-wavelength spectroscopic ellipsometry. A correspondence relativity connection between the deposition rate and technology was found. The chemical bonding structures and the content of CHx and CFx in the films are transformed and the optical band gap decreases monotonically with increasing temperature after annealing.The dielectric constant is increased with decreasing content of F in the films and the optical band gap is decreased with decreasing the content of H in the film.     

Editorial: Advice to authors: satisfying the referees

Abstract

The latest version of ‘Instructions to authors’ of papers for publication in British Corrosion Journal was printed in the second issue for 1987 and will be reprinted from time to time. These are the essential requirements for papers submitted for publication but it may be helpful to draw prospective authors' attention to points which will help to ensure that their papers pass quickly through the refereeing procedure and are likely to prove suitable for publication.

The prime objective of refereeing is to assist the Editorial Panel in maintaining the standard of British Corrosion Journal. When assessing a paper the referee is asked to advise whether the material has been presented in such a way that it can be easily understood. It must contain sufficient detail for readers to be able to assess the value of the information and the validity of the conclusions. Since space in the,Journal is limited, it is important that no unnecessary text is included but sufficient experimental detail must be given to enable readers to assess the reliability of the work reported.     

Synthesis of yttrium barium copper oxide-0.325Ag superconductors via intermediate precursor with overall composition Y:Ba:Cu:0=l:2:3:Y, Y>7 produced by high-energy attrition milling

A highly homogeneous composite precursor containing nano-scale particles was synthesized from the highenergy attrition milling of a mixture of metallic Y, metallic Cu and barium nitrate (Ba(N0₃)₂) containing 5 wt.% silver. The particle size of the 20 hour attrition-milled precursor was in the range of 30~80 nm as estimated by the XRD technique and direct TEM observation. With the heat treatment of the attrition-milled precursor, an intermediate precursor with the overall composition Y:Ba:Cu:O=l:2:3:y, y>7 was synthesized. The analyzed Y:Ba:Cu:Ag:O molar ratio of the intermediate precursor by AES/AAS and iodimetric titration was 1:1.972:3.022:0.323:7.41, which was very close to the estimated composition: 0.5Y₂O₃+2BaCuO_2.5+CuO +0.325Ag. Y123-Ag superconductors in powder or bulk forms were prepared using heat treatment or thermomechanical processing of the intermediate precursor containing BaCu0_2.5. The high oxygen orthorhombic Y123-Ag phase (y>7) was obtained in quenched samples which were held for 30 min or less at 950°C in ambient air. As the holding time extended to 40 min, the sample was still orthorhombic Y123-Ag (6.7<y <7). The transport critical current density (J_c) at 77 K and zero magnetic field for the quenched sample which was held for 40 min at 950°C was ~1.3xl0³ A/cm².     

A contribution to the crystallochemistry of ternary 1:1:1 and 1:1:2 rare earth intermetallic phases with Pb and Pd

The ternary alloys of the rare earths with lead and palladium were studied for the stoichiometric ratios 1:1:1 and 1:1:2 with respect to the structure of these alloys and their existence field. RPbPd (R = La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Y, Ho, Er, Tm, Yb) compounds have a hexagonal structure, hP9 Fe₂P type, while RPbPd₂ (R = Pr, Sm, Gd, Tb, Dy, Ho, Er, Yb) alloys have the cubic AlCu₂Mn-type structure (cF16, BiF₃ superstructure).     

Meet a member: Raymond Smith: Hazardous Abandoned Mine Finder

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Meet a member: Raymond Smith: Hazardous Abandoned Mine Finder     

Electrical conductivity of 1 : 1 and 2 : 1 clay minerals

The A.C. impedance plots were used as tools to analyze the electrical response of two varieties of Tunisian halloysite 1: 1 and illitic samples 2: 1 as a function of frequency at different temperatures (80–800°C). The real and imaginary parts of the complex impedance trace semicircles in the complex plane. Except for the illite, It-1, the second sample analyzed in this study, these plots give evidence for the presence of both bulk and grain boundary effect, above 600°C onwards. The bulk resistance of the materials decreases with the rise in temperature. Impedance Spectroscopy data reveal a non-Debye type of dielectric relaxation. The Nyquist plots show the negative temperature coefficient of resistance of both pure Tunisian illite and halloysite samples. The results of bulk electrical conductivity and its activation energy are presented for the two mineral clay samples. For illite It-1, the activation energy values estimated from the AC conductivity pattern and modulus pattern are very similar and suggest a possibility of a long-range mobility of charge carriers (ions) via hopping mechanism of electrical transport processes at higher temperature. On the other hand, for the halloysite sample provided from kasserine, (Ha-Kass), the modulus analysis admit that the electrical transport processes of the material are very likely of electronic nature. Relaxation frequencies follow an Arrhenius behavior with the activation energy values not comparable to those found for the electrical conductivity.     

Yb:YAG与Nd:YAG纳米晶的制备及性能

通过超声-微波辅助醇盐水解沉淀法合成了Yb:YAG与Nd:YAG纳米晶。研究了微波辐射功率、微波辐射时间及煅烧温度对产物的影响。采用X-射线粉末衍射(XRD)、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)及光致发光谱(PL)等对Yb:YAG与Nd:YAG纳米晶进行表征。结果表明,在微波辐射功率385 W、微波辐射时间30 min、煅烧温度1100 C条件下,可以获得纯相Yb:YAG与Nd:YAG纳米晶。当煅烧温度为1100 C时,Yb:YAG与Nd:YAG纳米晶的合作发光强度均达到最大值。     

Microstructure and mechanical properties of graphitic a-C:H:Si films

A series of graphitic a-C:H:Si films with different Si content were prepared by altering the sputtering current in a hybrid RF-PECVD and magnetron sputtering system. Microstructures and mechanical properties of them were characterized by IR, Raman, XPS, nanoindentation and scratch tests. Results show that although the sp³/sp² ratio increases with increasing Si content and as high as 8.2 at.% of silicon was doped, the a-C:H:Si films remain graphitic in nature and the I_D/I_G ratio is nearly constant for all. The coupling effects of sputtering-induced heating and strong ion bombarding due to negatively biasing were considered to be responsible for the film graphitization. The graphitic nature also accounts for the lower nanohardness of prepared a-C:H:Si films than the diamond-like a-C:H and a-C:H:Si films.