In Situ Observation of Crystallization Dynamics and Grain Orientation in Sequential Deposition of Metal Halide Perovskites

Metal halide perovskites have revolutionized the development of highly efficient, solution‐processable solar cells. Further advancements rely on improving perovskite film qualities through a better understanding of the underlying growth mechanism. Here, a systematic in situ grazing‐incidence X‐ray diffraction investigation is performed, facilitated by other techniques, on the sequential deposition of formamidinium lead iodide (FAPbI₃)‐based perovskite films. The active chemical reaction, composition distribution, phase transition, and crystal grain orientation are all visualized following the entire perovskite formation process. Furthermore, the influences of additive ions on the crystallization speed, grain orientation, and morphology of FAPbI₃‐based films, along with their photovoltaic performances, are fully evaluated and optimized, which leads to highly reproducible and efficient perovskite solar cells. The findings provide key insights into the perovskite growth mechanism and suggest the fabrication of high‐quality perovskite films for widespread optoelectronic applications.     

Room‐Temperature Partial Conversion of α‐FAPbI3 Perovskite Phase via PbI2 Solvation Enables High‐Performance Solar Cells

The two‐step conversion process consisting of metal halide deposition followed by conversion to hybrid perovskite has been successfully applied toward producing high‐quality solar cells of the archetypal MAPbI₃ hybrid perovskite, but the conversion of other halide perovskites, such as the lower bandgap FAPbI₃, is more challenging and tends to be hampered by the formation of hexagonal nonperovskite polymorph of FAPbI₃, requiring Cs addition and/or extensive thermal annealing. Here, an efficient room‐temperature conversion route of PbI₂ into the α‐FAPbI₃ perovskite phase without the use of cesium is demonstrated. Using in situ grazing incidence wide‐angle X‐ray scattering (GIWAXS) and quartz crystal microbalance with dissipation (QCM‐D), the conversion behaviors of the PbI₂ precursor from its different states are compared. α‐FAPbI₃ forms spontaneously and efficiently at room temperature from P₂ (ordered solvated polymorphs with DMF) without hexagonal phase formation and leads to complete conversion after thermal annealing. The average power conversion efficiency (PCE) of the fabricated solar cells is greatly improved from 16.0(±0.32)% (conversion from annealed PbI₂) to 17.23(±0.28)% (from solvated PbI₂) with a champion device PCE > 18% due to reduction of carrier recombination rate. This work provides new design rules toward the room‐temperature phase transformation and processing of hybrid perovskite films based on FA⁺ cation without the need for Cs⁺ or mixed halide formulation.     

Inorganic Rubidium Cation as an Enhancer for Photovoltaic Performance and Moisture Stability of HC(NH2)2PbI3 Perovskite Solar Cells

Perovskite solar cells (PSCs) based on organic monovalent cation (methylammonium or formamidinium) have shown excellent optoelectronic properties with high efficiencies above 22%, threatening the status of silicon solar cells. However, critical issues of long‐term stability have to be solved for commercialization. The severe weakness of the state‐of‐the‐art PSCs against moisture originates mainly from the hygroscopic organic cations. Here, rubidium (Rb) is suggested as a promising candidate for an inorganic–organic mixed cation system to enhance moisture‐tolerance and photovoltaic performances of formamidinium lead iodide (FAPbI₃). Partial incorporation of Rb in FAPbI₃ tunes the tolerance factor and stabilizes the photoactive perovskite structure. Phase conversion from hexagonal yellow FAPbI₃ to trigonal black FAPbI₃ becomes favored when Rb is introduced. The authors find that the absorbance and fluorescence lifetime of 5% Rb‐incorporated FAPbI₃ (Rb_0.05FA_0.95PbI₃) are enhanced than bare FAPbI₃. Rb_0.05FA_0.95PbI₃‐based PSCs exhibit a best power conversion efficiency of 17.16%, which is much higher than that of the FAPbI₃ device (13.56%). Moreover, it is demonstrated that the Rb_0.05FA_0.95PbI₃ film shows superior stability against high humidity (85%) and the full device made with the mixed perovskite exhibits remarkable long‐term stability under ambient condition without encapsulation, retaining the high performance for 1000 h.     

Boosting Photovoltaic Performance for Lead Halide Perovskites Solar Cells with BF4− Anion Substitutions

Composition engineering is a particularly simple and effective approach especially using mixed cations and halide anions to optimize the morphology, crystallinity, and light absorption of perovskite films. However, there are very few reports on the use of anion substitutions to develop uniform and highly crystalline perovskite films with large grain size and reduced defects. Here, the first report of employing tetrafluoroborate (BF₄^?) anion substitutions to improve the properties of (FA = formamidinium, MA = methylammonium (FAPbI₃)_0.83(MAPbBr₃)_0.17) perovskite films is demonstrated. The BF₄^? can be successfully incorporated into a mixed‐ion perovskite crystal frame, leading to lattice relaxation and a longer photoluminescence lifetime, higher recombination resistance, and 1–2 orders magnitude lower trap density in prepared perovskite films and derived solar cells. These advantages benefit the performance of perovskite solar cells (PVSCs), resulting in an improved power conversion efficiency (PCE) of 20.16% from 17.55% due to enhanced open‐circuit voltage (V_OC) and fill factor. This is the highest PCE for BF₄^? anion substituted lead halide PVSCs reported to date. This work provides insight for further exploration of anion substitutions in perovskites to enhance the performance of PVSCs and other optoelectronic devices.     

Multi-Site Intermolecular Interaction for In Situ Formation of Vertically Orientated 2D Passivation Layer in Highly Efficient Perovskite Solar Cells

Surface passivation via 2D perovskite is critical for perovskite solar cells (PSCs) to achieve remarkable performances, in which the applied spacer cations play an important role on structural templating. However, the random orientation of 2D perovskite always hinder the carrier transport. Herein, multiple nitrogen sites containing organic spacer molecule (1H-Pyrazole-1-carboxamidine hydrochloride, PAH) is introduced to form 2D passivation layer on the surface of formamidinium based (FAPbI₃) perovskite. Deriving from the interactions between PAH and PbI₂, the defects of FAPbI₃ perovskite are effectively passivated. Interestingly, due to the multiple-site interactions, the 2D nanosheets are found to grow perpendicularly to the substrate for promotion of charge transfer. Therefore, an impressive power conversion efficiency of 24.6% and outstanding long-term stability are achieved for the 2D/3D perovskite devices. The findings further provide a perspective in structure design of novel organic halide salts for the fabrication of efficient and stable PSCs.     

Low‐Bandgap Mixed Tin‐Lead Perovskites and Their Applications in All‐Perovskite Tandem Solar Cells

Efficient organic–inorganic metal halide perovskite absorbers have gained tremendous research interest in the past decade due to their super optoelectronic properties and defect tolerance. Lead (Pb) halide perovskites enable highly efficient perovskite solar cells (PSCs) with a record power conversion efficiency (PCE) of over 23%. However, the energy bandgaps of Pb halide perovskites are larger than the optimal bandgap for single junction solar cells, governed by the Shockley–Queisser (SQ) radiative limit. Mixed tin (Sn)‐Pb halide perovskites have drawn significant attention, since their bandgap can be tuned to below 1.2 eV, which opens a door for fabricating all‐perovskite tandem solar cells that can break the SQ radiative limit. This review summarizes the development of low‐bandgap mixed Sn‐Pb PSCs and their applications in all‐perovskite tandem solar cells. Its aim is to facilitate the development of new approaches to achieve high efficiency low‐bandgap single‐junction mixed Sn‐Pb PSCs and all‐perovskite tandem solar cells.     

Tailoring the Interface in FAPbI3 Planar Perovskite Solar Cells by Imidazole-Graphene-Quantum-Dots

Organic–inorganic hybrid perovskites have reached an unprecedented high efficiency in photovoltaic applications, which makes the commercialization of perovskite solar cells (PSCs) possible. In the past several years, particular attention has been paid to the stability of PSC devices, which is a critical issue for becoming a practical photovoltaic technology. In particular, the interface-induced degradation of perovskites should be the dominant factor causing poor stability. Here, imidazole bromide functionalized graphene quantum dots (I-GQDs) are demonstrated to regulate the interface between the electron transport layer (ETL) and formamidinium lead iodide (FAPbI₃) perovskite layer. The incorporation of I-GQDs not only reduces the interface defects for achieving a better energy level alignment between ETL and perovskite, but also improves the film quality of FAPbI₃ perovskite including enlarged grain size, lower trap density, and a longer carrier lifetime. Consequently, the planar FAPbI₃ PSCs with I-GQDs regulation achieve a high efficiency of 22.37% with enhanced long-term stability.     

Humidity‐Induced Degradation via Grain Boundaries of HC(NH2)2PbI3 Planar Perovskite Solar Cells

The sensitivity of organic–inorganic perovskites to environmental factors remains a major barrier for these materials to become commercially viable for photovoltaic applications. In this work, the degradation of formamidinium lead iodide (FAPbI₃) perovskite in a moist environment is systematically investigated. It is shown that the level of relative humidity (RH) is important for the onset of degradation processes. Below 30% RH, the black phase of the FAPbI₃ perovskite shows excellent phase stability over 90 d. Once the RH reaches 50%, degradation of the FAPbI₃ perovskite occurs rapidly. Results from a Kelvin probe force microscopy study reveal that the formation of nonperovskite phases initiates at the grain boundaries and the phase transition proceeds toward the grain interiors. Also, ion migration along the grain boundaries is greatly enhanced upon degradation. A post‐thermal treatment (PTT) that removes chemical residues at the grain boundaries which effectively slows the degradation process is developed. Finally, it is demonstrated that the PTT process improves the performance and stability of the final device.     

Oriented Crystallization of Mixed‐Cation Tin Halides for Highly Efficient and Stable Lead‐Free Perovskite Solar Cells

As the most promising lead‐free branch, tin halide perovskites suffer from the severe oxidation from Sn²⁺ to Sn⁴⁺, which results in the unsatisfactory conversion efficiency far from what they deserve. In this work, by facile incorporation of methylammonium bromide in composition engineering, formamidinium and methylammonium mixed cations tin halide perovskite films with ultrahighly oriented crystallization are synthesized with the preferential facet of (001), and that oxidation is suppressed with obviously declined trap density. MA⁺ ions are responsible for that impressive orientation while Br^‐ ions account for their bandgap modulation. Depending on high quality of the optimal MA_0.25FA_0.75SnI_2.75Br_0.25 perovskite films, their device conversion efficiency surges to 9.31% in contrast to 5.02% of the control formamidinium tin triiodide perovskite (FASnI₃) device, along with almost eliminated hysteresis. That also results in the outstanding device stability, maintaining above 80% of the initial efficiency after 300 h of light soaking while the control FASnI₃ device fails within 120 h. This paper definitely paves a facile and effective way to develop high‐efficiency tin halide perovskites solar cells, optoelectronic devices, and beyond.     

δ‐CsPbI3 Intermediate Phase Growth Assisted Sequential Deposition Boosts Stable and High‐Efficiency Triple Cation Perovskite Solar Cells

Cs/FA/MA triple cation perovskite films have been well developed in the antisolvent dripping method, attributable to its outstanding photovoltaic and stability performances. However, a facile and effective strategy is still lacking for fabricating high‐quality large‐grain triple cation perovskite films via sequential deposition method a, which is one of the key technologies for high efficiency perovskite solar cells. To address this issue, a δ‐CsPbI₃ intermediate phase growth (CsPbI₃‐IPG) assisted sequential deposition method is demonstrated for the first time. The approach not only achieves incorporation of controllable cesium into (FAPbI₃)_1–x(MAPbBr₃)_x perovskite, but also enlarges the perovskite grains, manipulates the crystallization, modulates the bandgap, and improves the stability of final perovskite films. The photovoltaic performances of the devices based on these Cs/FA/MA perovskite films with various amounts of the δ‐CsPbI₃ intermediate phase are investigated systematically. Benefiting from moderate cesium incorporation and intermediate phase‐assisted grain growth, the optimized Cs/FA/MA perovskite solar cells exhibit a significantly improved power conversion efficiency and operational stability of unencapsulated devices. This facile strategy provides new insights into the compositional engineering of triple or quadruple cation perovskite materials with enlarged grains and superior stability via a sequential deposition method.     

Heteroatom Effect on Star‐Shaped Hole‐Transporting Materials for Perovskite Solar Cells

Three new star‐shaped hole‐transporting materials (HTMs) incorporating benzotripyrrole, benzotrifuran, and benzotriselenophene central cores endowed with three‐armed triphenylamine moieties ( BTP‐1 , BTF‐1 , and BTSe‐1 , respectively) are designed, synthesized, and implemented in perovskite solar cells (PSCs). The impact that the heteroatom‐containing central scaffold has on the electrochemical and photophysical properties, as well as on the photovoltaic performance, is systematically investigated and compared with their sulfur‐rich analogue ( BTT‐3 ). The new HTMs exhibit suitable highest‐occupied molecular orbitals (HOMO) levels regarding the valence band of the perovskite, which ensure efficient hole extraction at the perovskite/HTM interface. The molecular structures of BTF‐1 , BTT‐3 , and BTSe‐1 are fully elucidated by single‐crystal X‐ray crystallography as toluene solvates. The optimized (FAPbI₃)_0.85(MAPbBr₃)_0.15‐based perovskite solar cells employing the tailor‐made, chalcogenide‐based HTMs exhibit remarkable power conversion efficiencies up to 18.5%, which are comparable to the devices based on the benchmark spiro‐OMeTAD. PSCs with BTP‐1 exhibit a more limited power conversion efficiency of 15.5%, with noticeable hysteresis. This systematic study indicates that chalcogenide‐based derivatives are promising HTM candidates to compete efficiently with spiro‐OMeTAD.     

Air‐Stable Highly Crystalline Formamidinium Perovskite 1D Structures for Ultrasensitive Photodetectors

State‐of‐the‐art optoelectronic devices based on metal‐halide perovskites demand solution‐processed structures with high crystallinity, controlled crystallographic orientation, and enhanced environmental stability. Formamidinium lead iodide (α‐FAPbI₃) possesses a suitable bandgap of 1.48 eV and enhanced thermal stability, whereas perovskite‐type polymorph (α‐phase) is thermodynamically instable at ambient temperatures. Stable α‐FAPbI₃ perovskite 1D structure arrays with high crystallinity and ordered crystallographic orientation are developed by controlled nucleation and growth in capillary bridges. By surface functionalization with phenylethylammonium ions (PEA⁺), FAPbI₃ wires sustain a stable α‐phase after 28 day storage in the ambient environment with a relative humidity of 50%. Enhanced photoluminescence (PL) intensity and elongated PL lifetime demonstrate suppressed trap density and high crystallinity in these 1D structures, which is also reflected by the enhanced diffraction density and pure (001) crystallographic orientation in the grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) pattern. Based on these high‐quality 1D structures, sensitive photodetectors are achieved with average responsivities of 5282 A W^?1, average specific detectivities of more than 1.45 × 10¹⁴ Jones, and a fast response speed with a 3 dB bandwidth of 15 kHz.     

Impact of Processing on Structural and Compositional Evolution in Mixed Metal Halide Perovskites during Film Formation

Understanding crystallization processes and their pathways in metal‐halide perovskites is of crucial importance as this strongly affects the film microstructure, its stability, and device performance. While many approaches are developed to control perovskite formation, the mechanisms of film formation are still poorly known. Using time‐resolved in situ grazing incidence wide‐angle X‐ray scattering, the film formation of perovskites is investigated with average stoichiometry Cs_0.15FA_0.85PbI₃, where FA is formamidinium, using the popular antisolvent dropping and gas jet treatments and this is contrasted with untreated films. i) The crystallization pathways during spin coating, ii) the subsequent postdeposition thermal annealing, and iii) crystallization during blade coating are studied. The findings reveal that the formation of a nonperovskite FAPbI₃ phase during spin coating is initially dominant regardless of the processing and that the processing treatment (e.g., antisolvent dropping, gas jet) has a significant impact on the as‐cast film structure and affects the phase evolution during subsequent thermal treatment. It is shown that blade coating can be used to overcome the nonperovskite phase formation via solvothermal direct crystallization of perovskite phase. This work shows how real‐time investigation of perovskite formation can help to establish processing–microstructure–functionality relationships.     

Triamine‐Based Aromatic Cation as a Novel Stabilizer for Efficient Perovskite Solar Cells

Operational stability of perovskite solar cells has been a challenge from the beginning of perovskite research. In general, humidity and heat are the most well‐known degradation sources for perovskites, requiring ideal design of perovskite chemistry to withstand them. Although triple‐cation perovskite (Cs_0.05(FA_0.85MA_0.15)_0.95Pb(I_0.85Br_0.15)₃) has been already introduced as the stable perovskite material, the high reactivity of methylammonium and formamidinium in the cation sites demands further modification. Herein, 1,2,4‐triazole is suggested as an effective cation solute to improve the performance and stability of perovskite solar cells. 1,2,4‐Triazole is an aromatic cation with low dipole moment that is stable under humidity and heat. It also possesses three nitrogen atoms, forming additional hydrogen bonds in the lattice, stabilizing the material. In this study, the solar cell utilizing 1,2,4‐triazole alloying achieves a power conversion efficiency of 20.9% with superior stability under extreme condition (85 °C/85% of relative humidity (RH), encapsulated) for 700 h. The 1,2,4‐triazole‐alloyed perovskite exhibits reduced trap density and film roughness and enhanced carrier lifetime with electrical conductivity, suggesting an ideal perovskite structure for efficient and stable optoelectronic applications.     

Enhancing Stability of Efficient Perovskite Solar Cells (PCE ≈ 24.5%) by Suppressing PbI2 Inclusion Formation

Excess lead(II) iodide (PbI₂) has controversial roles in affecting the efficiency of perovskite solar cells (PSCs). Since the photoinstability of PbI₂ is now known to largely accelerate perovskite degradation, suppressing and/or eliminating excess PbI₂ is key to improving the stability of PSCs. Herein, process-dependent PbI₂ formation on the surfaces of formamidinium lead triiodide (FAPbI₃) films is examined. Due to the faster evaporation rate of organic substances, crystalline PbI₂ as an inclusion is found within the triple junction grain boundaries. With this hypothesis, two strategies are suggested: control of the 1) vapor pressure and 2) stoichiometry of precursor solutions to induce sufficient reaction of FAPbI₃. Although both strategies successfully eliminate the PbI₂ as inclusions, due to the slower evaporation rate, vapor pressure control films also exhibit a larger grain size (≈1.18 µm) with a good film quality to attain the highest power conversion efficiency (PCE) of 24.5%. Furthermore, the phase stability of α-FAPbI₃ is improved due to the elimination of the degradation sites induced by the photoinstability of PbI₂. The findings explore the formation process of unwanted PbI₂ (≈2.8%) and provide a simple method to effectively suppress its formation. This may further boost the PCE and stability, especially for FA-based perovskites.     

Dual Passivation of Perovskite Defects for Light‐Emitting Diodes with External Quantum Efficiency Exceeding 20%

Solution‐processed metal halide perovskites (MHPs) have attracted much attention for applications in light‐emitting diodes (LEDs) due to their wide color gamut, high color purity, tunable emission wavelength, balanced electron/hole transportation, etc. Although MHPs are very tolerant to defects, the defects in solution‐processed perovskite LEDs (PeLEDs) still cause severe nonradiative recombination and device instability. Here, molecular design of additives for dual passivation of both lead and halide defects in perovskites is reported. A bi‐functional additive, 4‐fluorophenylmethylammonium‐trifluoroacetate (FPMATFA), is synthesized by using a simple solution process. The TFA anions and FPMA cations can bond with undercoordinated lead and halide ions, respectively, resulting in dual passivation of both lead and halide defects. In addition, the bulky FPMA group can constrain the grain growth of 3D perovskite, enhancing electron–hole capture rates and radiative recombination rates. As a result, high‐performance PeLEDs with a peak external quantum efficiency reaching 20.9% and emission wavelength at 694 nm are achieved using formamidinium‐cesium lead iodide‐bromide (FA_0.33Cs_0.67Pb(I_0.7Br_0.3)₃). Furthermore, the operational lifetime of PeLEDs is also greatly improved due to the low trap density in the perovskite film.     

Overcoming Zinc Oxide Interface Instability with a Methylammonium‐Free Perovskite for High‐Performance Solar Cells

Perovskite solar cells have achieved the highest power conversion efficiencies on metal oxide n‐type layers, including SnO₂ and TiO₂. Despite ZnO having superior optoelectronic properties to these metal oxides, such as improved transmittance, higher conductivity, and closer conduction band alignment to methylammonium (MA)PbI₃, ZnO is largely overlooked due to a chemical instability when in contact with metal halide perovskites, which leads to rapid decomposition of the perovskite. While surface passivation techniques have somewhat mitigated this instability, investigations as to whether all metal halide perovskites exhibit this instability with ZnO are yet to be undertaken. Experimental methods to elucidate the degradation mechanisms at ZnO–MAPbI₃ interfaces are developed. By substituting MA with formamidinium (FA) and cesium (Cs), the stability of the perovskite–ZnO interface is greatly enhanced and it is found that stability compares favorably with SnO₂‐based devices after high‐intensity UV irradiation and 85 °C thermal stressing. For devices comprising FA‐ and Cs‐based metal halide perovskite absorber layers on ZnO, a 21.1% scanned power conversion efficiency and 18% steady‐state power output are achieved. This work demonstrates that ZnO appears to be as feasible an n‐type charge extraction layer as SnO₂, with many foreseeable advantages, provided that MA cations are avoided.     

Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching

CsPbX₃ (X = halide, Cl, Br, or I) all‐inorganic halide perovskites (IHPs) are regarded as promising functional materials because of their tunable optoelectronic characteristics and superior stability to organic–inorganic hybrid halide perovskites. Herein, nonvolatile resistive switching (RS) memory devices based on all‐inorganic CsPbI₃ perovskite are reported. An air‐stable CsPbI₃ perovskite film with a thickness of only 200 nm is successfully synthesized on a platinum‐coated silicon substrate using low temperature all‐solution process. The RS memory devices of Ag/polymethylmethacrylate (PMMA)/CsPbI₃/Pt/Ti/SiO₂/Si structure exhibit reproducible and reliable bipolar switching characteristics with an ultralow operating voltage (<+0.2 V), high on/off ratio (>10⁶), reversible RS by pulse voltage operation (pulse duration < 1 ms), and multilevel data storage. The mechanical flexibility of the CsPbI₃ perovskite RS memory device on a flexible substrate is also successfully confirmed. With analyzing the influence of phase transition in CsPbI₃ on RS characteristics, a mechanism involving conducting filaments formed by metal cation migration is proposed to explain the RS behavior of the memory device. This study will contribute to the understanding of the intrinsic characteristics of IHPs for low‐voltage resistive switching and demonstrate the huge potential of them for use in low‐power consumption nonvolatile memory devices on next‐generation computing systems.     

HPbI3: A New Precursor Compound for Highly Efficient Solution‐Processed Perovskite Solar Cells

Recently, there have been extensive research efforts on developing high performance organolead halide based perovskite solar cells. While most studies focused on optimizing the deposition processes of the perovskite films, the selection of the precursors has been rather limited to the lead halide/methylammonium (or formamidium) halide combination. In this work, we developed a new precursor, HPbI₃, to replace lead halide. The new precursor enables formation of highly uniform formamidium lead iodide (FAPbI₃) films through a one‐step spin‐coating process. Furthermore, the FAPbI₃ perovskite films exhibit a highly crystalline phase with strong (110) preferred orientation and excellent thermal stability. The planar heterojunction solar cells based on these perovskite films exhibit an average efficiency of 15.4% and champion efficiency of 17.5% under AM 1.5 G illumination. By comparing the morphology and formation process of the perovskite films fabricated from the formamidium iodide (FAI)/HPbI₃, FAI/PbI₂, and FAI/PbI₂ with HI additive precursor combinations, it is shown that the superior property of the HPbI₃ based perovskite films may originate from 1) a slow crystallization process involving exchange of H⁺ and FA⁺ ions in the PbI₆ octahedral framework and 2) elimination of water in the precursor solution state.     

Enhanced Incorporation of Guanidinium in Formamidinium‐Based Perovskites for Efficient and Stable Photovoltaics: The Role of Cs and Br

Recently, incorporating guanidium (GA) cations into organolead halide perovskites is shown to effectively improve the stability and performance of the solar cells. However, the underlying mechanisms that govern the GA incorporation have remained unclear. Here, FAPbI₃ is used as a basic framework to investigate experimentally and theoretically the role of cesium (Cs) and bromine (Br) substitutions in GA⁺ incorporation. It is found that simultaneous introduction of the small‐size Cs⁺ and Br^– in the FAPbI₃ lattice is critical to create sufficient space for the large GA⁺ and that the presence of the Cs⁺ prevents the formation of a GA‐contained low‐dimensional phase, which both assist GA⁺ incorporation. Upon entering the perovskite lattice, the GA⁺ can stabilize the lattice structure via forming strong hydrogen bonds with their neighboring halide ions. Such structure modification suppresses halide vacancy formation, thus leading to improved material properties. Compared to the GA‐free perovskite reference samples, the optimal system GA_0.05Cs_0.15FA_0.8Pb(I_0.85Br_0.15)₃ exhibits substantially improved thermal and photothermal stability, as well as increased photocarrier lifetime. Solar cells fabricated with the optimal material system show an excellent photovoltaic performance, with the champion device reaching a power conversion efficiency of 21.3% and an open circuit voltage of 1.229 V.