Solution‐Processed Flexible Broadband Photodetectors with Solution‐Processed Transparent Polymeric Electrode

Room‐temperature solution‐processed flexible photodetectors with spectral response from 300 to 2600 nm are reported. Solution‐processed polymeric thin film with transparency ranging from 300 to 7000 nm and superior electrical conductivity as the transparent electrode is reported. Solution‐processed flexible broadband photodetectors with a “vertical” device structure incorporating a perovskite/PbSe quantum dot bilayer thin film based on the above solution‐processed transparent polymeric electrode are demonstrated. The utilization of perovskite/PbSe quantum dot bilayer thin film as the photoactive layer extends spectral response to infrared region and boosts photocurrent densities in both visible and infrared regions through the trap‐assisted photomultiplication effect. Operated at room temperature and under an external bias of ‐1 V, the solution‐processed flexible photodetectors exhibit over 230 mA W^‐1 responsivity, over 1011 cm Hz1/2/W photodetectivity from 300 to 2600 nm and ≈70 dB linear dynamic ranges. It is also found that the solution‐processed flexible broadband photodetectors exhibit fast response time and excellent flexibility. All these results demonstrate that this work develop a facile approach to realize room‐temperature operated ultrasensitive solution‐processed flexible broadband photodetectors with “vertical” device structure through solution‐processed transparent polymeric electrode.     

Flexible and Self‐Powered Lateral Photodetector Based on Inorganic Perovskite CsPbI3–CsPbBr3 Heterojunction Nanowire Array

Self‐powered perovskite photodetectors mainly adopt the vertical heterojunction structure composed of active layer, electron–hole transfer layers, and electrodes, which results in the loss of incident light and interfacial accumulation of defects. To address these issues, a self‐powered lateral photodetector based on CsPbI₃–CsPbBr₃ heterojunction nanowire arrays is designed on both a rigid glass and a flexible polyethylene naphthalate substrate using an in situ conversion and mask‐assisted electrode fabrication method. Through adding the polyvinyl pyrrolidone and optimizing the concentration of precursors under the pressure‐assisted moulding process, both the crystallinity and stability of perovskite nanowire array are improved. The nanowire array–based lateral device shows a high responsivity of 125 mA W^?1 and a fast rise and decay time of 0.7 and 0.8 ms under a self‐powered operation condition. This work provides a new strategy to fabricate perovskite heterojunction nanoarrays towards self‐powered photodetection.     

Flexible Solid‐State Supercapacitor Based on Graphene‐based Hybrid Films

A flexible solid‐state asymmetric supercapacitor based on bendable film electrodes with 3D expressway‐like architecture of graphenes and “hard nano‐spacer” is fabricated via an extended filtration assisted method. In the designed structure of the positive electrode, graphene sheets are densely packed, and Ni(OH)₂ nanoplates are intercalated in between the densely stacked graphenes. The 3D expressway‐like electrodes exhibit superior supercapacitive performance including high gravimetric capacitance (≈573 F g^‐1), high volumetric capacitance (≈655 F cm^‐3), excellent rate capability, and superior cycling stability. In addition, another hybrid film of graphene and carbon nanotubes (CNT) is fabricated as the negative electrodes for the designed asymmetric device. In the obtained graphene@CNT films, CNTs served as the hard spacer to prevent restacking of graphene sheets but also as a conductive and robust network to facilitate the electrons collection/transport in order to fulfill the demand of high‐rate performance of the asymmetric supercapacitor. Based on these two hybrid electrode films, a solid‐state flexible asymmetric supercapacitor device is assembled, which is able to deliver competitive volumetric capacitance of 58.5 F cm^‐3 and good rate capacity. There is no obvious degradation of the supercapacitor performance when the device is in bending configuration, suggesting the excellent flexibility of the device.     

Large‐Area Schottky Barrier Transistors Based on Vertically Stacked Graphene–Metal Oxide Heterostructures

The fabrication of all‐transparent flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene–metal oxide–metal heterostructures and ion gel gate dielectrics is demonstrated. The vertical SB transistor structure is formed by (i) vertically sandwiching a solution‐processed indium‐gallium‐zinc‐oxide (IGZO) semiconductor layer between graphene (source) and metallic (drain) electrodes and (ii) employing a separate coplanar gate electrode bridged with a vertical channel through an ion gel. The channel current is modulated by tuning the Schottky barrier height across the graphene–IGZO junction under an applied external gate bias. The ion gel gate dielectric with high specific capacitance enables modulation of the Schottky barrier height at the graphene–IGZO junction over 0.87 eV using a voltage below 2 V. The resulting vertical devices show high current densities (18.9 A cm^?2) and on–off current ratios (>10⁴) at low voltages. The simple structure of the unit transistor enables the successful fabrication of low‐power logic gates based on device assemblies, such as the NOT, NAND, and NOR gates, prepared on a flexible substrate. The facile, large‐area, and room‐temperature deposition of both semiconducting metal oxide and gate insulators integrates with transparent and flexible graphene opens up new opportunities for realizing graphene‐based future electronics.     

Light‐Responsive Ion‐Redistribution‐Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

Hybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports on perovskite‐based resistive switching (RS) memories, but there remain open questions regarding device stability and switching mechanism. Here, an RS memory based on a high‐quality capacitor structure made of an MAPbBr₃ (CH₃NH₃PbBr₃) perovskite layer sandwiched between Au and indium tin oxide (ITO) electrodes is reported. Such perovskite devices exhibit reliable RS with an ON/OFF ratio greater than 10³, endurance over 10³ cycles, and a retention time of 10⁴ s. The analysis suggests that the RS operation hinges on the migration of charged ions, most likely MA vacancies, which reversibly modifies the perovskite bulk transport and the Schottky barrier at the MAPbBr₃/ITO interface. Such perovskite memory devices can also be fabricated on flexible polyethylene terephthalate substrates with high bendability and reliability. Furthermore, it is found that reference devices made of another hybrid perovskite MAPbI₃ consistently exhibit filament‐type switching behavior. This work elucidates the important role of processing‐dependent defects in the charge transport of hybrid perovskites and provides insights on the ion‐redistribution‐based RS in perovskite memory devices.     

Mixed‐Valence‐Driven Quasi‐1D SnIISnIVS3 with Highly Polarization‐Sensitive UV–vis–NIR Photoresponse

Mixed‐valence states can bring unexpected unique phenomena, especially novel anisotropic physics, due to structural asymmetry, which originate from the discrepant distribution of atoms with different valence. This study reports an unexploited mixed‐valence‐driven quasi‐1D Sn^IISn^IVS₃ crystal, which exhibits widely and distinctively anisotropic polarized‐light absorption reaching ≈3.4 from the deep ultraviolet to near‐infrared region (250–850 nm). The fabricated polarization‐sensitive photodetectors based on highly air‐stable Sn^IISn^IVS₃ nanowires display strong linear dichroism among the UV–vis–NIR spectrum with responsivity exceeding ≈150 A W^?1. Furthermore, the devices are further constructed onto a flexible polyethylene terephthalate (PET) substrate and the photoresponse remains roughly unchanged after repeated bending. This work based on novel mixed‐valence‐driven quasi‐1D ternary sulfide Sn^IISn^IVS₃ excites interest in low‐symmetry semiconductors for developing broadly spectral polarization‐sensitive photodetectors with environmental stability and mechanical flexibility.     

Working Principles of Perovskite Photodetectors: Analyzing the Interplay Between Photoconductivity and Voltage‐Driven Energy‐Level Alignment

Organic–inorganic lead halide perovskites have recently received significant attention as active materials for high‐performance photovoltaics and photodetectors. However, the understanding of their operation mechanism remains limited. High‐gain, low‐voltage CH₃NH₃PbI₃ photodetectors in various architectures are demonstrated herein. Photomultiplication in all structures with direct contact of fluorine‐doped tin oxide (FTO) and perovskite with the highest responsivity 208 A W^?1 corresponding to an incident photon‐to‐current efficiency of 47 000% is observed. Studying the dynamics and temperature dependence, a slow process with an activation energy of 420 ± 90 meV in the time scale of seconds is found, which is essential to photocurrent multiplication. A model based on ion migration to explain the observed transients and the photomultiplication is developed. The accumulation of negative ionic charge at the FTO/perovskite interface under reverse bias lowers the FTO work function allowing for direct hole injection into the perovskite valence band. Under illumination, the conductivity of perovskite is increased and the device behaves similar to a photoconductor.     

Layered,Nanonetwork Composite Cathodes for Flexible,High‐Efficiency,Organic Light Emitting Devices

In this work, the application of an aluminum (Al)/multiwall carbon nanotube (MWCNT)/Al, multilayered electrode to flexible, high‐efficiency, alternating current driven organic electroluminescent devices (AC‐OEL), is reported. The electrode is fabricated by sandwiching a spray‐cast nanonetwork film of MWCNTs between two evaporated layers of Al. The resulting composite film facilitates a uniform charge distribution across a robust crack‐free electrode under various bending angles. It is demonstrated that these composite electrodes stabilize the power efficiency of flexible devices for bending angles up to 120°, with AC‐OEL device power efficiencies of ≈22 lm W^?1 at luminances of ≈4000 cd m^?2 (using no output coupling). Microscopic examination of the Al/MWCNTs/Al electrode after bending of up to 1300 cycles suggests that the nanotubes significantly enhance the mechanical properties of the thin Al layers while providing a moderate modification to the work function of the metal. While the realization of robust, high‐brightness, and high‐efficiency AC‐OEL devices is potentially important in their future lighting applications, it is anticipated that this to also have significant impact in standard organic light emitting diodes lighting applications.     

All‐Solution‐Processed Indium‐Free Transparent Composite Electrodes based on Ag Nanowire and Metal Oxide for Thin‐Film Solar Cells

Fully solution‐processed Al‐doped ZnO/silver nanowire (AgNW)/Al‐doped ZnO/ZnO multi‐stacked composite electrodes are introduced as a transparent, conductive window layer for thin‐film solar cells. Unlike conventional sol–gel synthetic pathways, a newly developed combustion reaction‐based sol–gel chemical approach allows dense and uniform composite electrodes at temperatures as low as 200 °C. The resulting composite layer exhibits high transmittance (93.4% at 550 nm) and low sheet resistance (11.3 Ω sq^‐1), which are far superior to those of other solution‐processed transparent electrodes and are comparable to their sputtered counterparts. Conductive atomic force microscopy reveals that the multi‐stacked metal‐oxide layers embedded with the AgNWs enhance the photocarrier collection efficiency by broadening the lateral conduction range. This as‐developed composite electrode is successfully applied in Cu(In_1‐x,Ga_x)S₂ (CIGS) thin‐film solar cells and exhibits a power conversion efficiency of 11.03%. The fully solution‐processed indium‐free composite films demonstrate not only good performance as transparent electrodes but also the potential for applications in various optoelectronic and photovoltaic devices as a cost‐effective and sustainable alternative electrode.     

High‐Performance Hazy Silver Nanowire Transparent Electrodes through Diameter Tailoring for Semitransparent Photovoltaics

Solution‐processed metal nanowire networks have attracted substantial attention as clear transparent conductive electrodes (TCEs) to replace metal oxides for low‐cost and flexible touch panels and displays. While targeting photovoltaic applications, TCEs are expected to be more hazy for enhancing light absorption in the active layer, but are still required to retain high transmittance and low sheet resistance. Balancing these properties (haze, transmittance, and conductivity) in TCEs to realize high performance but high haze simultaneously is a challenge because they are mutually influenced. Here, by precisely tailoring the diameter of thick–long silver nanowires using rapid radial electrochemical etching, high hazy flexible TCEs are fabricated with high figure of merit of up to 741 (4 Ω sq^?1 at 88.4% transmittance with haze of 13.3%), surpassing those of commercialized brittle hazy metal oxides and exhibiting superiority for photovoltaic applications. Laminating such TCEs onto the perovskite solar cells as top electrodes, the obtained semitransparent devices exhibit power efficiencies up to 16.03% and 11.12% when illuminated from the bottom and top sides, respectively, outperforming reported results based on similar device architecture. This study provides a simple strategy for flexible and hazy TCEs fabrication, which is compatible with mild solution‐processed photovoltaic devices, especially those containing heat‐sensitive or chemical‐sensitive materials.     

Integration of a Rib Waveguide Distributed Feedback Structure into a Light‐Emitting Polymer Field‐Effect Transistor

Ambipolar light‐emitting organic field‐effect transistors (LEFETs) possess the ability to efficiently emit light due to charge recombination in the channel. Since the emission can be made to occur far from the metal electrodes, the LEFET structure has been proposed as a potential architecture for electrically pumped organic lasers. Here, a rib waveguide distributed feedback structure consisting of tantalum pentoxide (Ta₂O₅) integrated within the channel of a top gate/bottom contact LEFET based on poly(9,9‐dioctylfluorene‐alt‐benzothiadiazole) (F8BT) is demonstrated. The emitted light is coupled efficiently into the resonant mode of the DFB waveguide when the recombination zone of the LEFET is placed directly above the waveguide ridge. This architecture provides strong mode confinement in two dimensions. Mode simulations are used to optimize the dielectric thickness and gate electrode material. It is shown that electrode absorption losses within the device can be eliminated and that the lasing threshold for optical pumping of the LEFET structure with all electrodes (4.5 µJ cm^?2) is as low as that of reference devices without electrodes. These results enable quantitative judgement of the prospects for realizing an electrically pumped organic laser based on ambipolar LEFETs. The proposed device provides a powerful, low‐loss architecture for integrating high‐performance ambipolar organic semiconductor materials into electrically pumped lasing structures.     

Semitransparent,Flexible, and Self‐Powered Photodetectors Based on Ferroelectricity‐Assisted Perovskite Nanowire Arrays

Transparent and flexible photodetectors hold great promise in next‐generation portable and wearable optoelectronic devices. However, most of the previously reported devices need an external energy power source to drive its operation or require complex fabrication processes. Herein, designed is a semitransparent, flexible, and self‐powered photodetector based on the integrated ferroelectric poly(vinylidene‐fluoride‐trifluoroethylene) (P(VDF‐TrFE)) and perovskite nanowire arrays on the flexible polyethylene naphthalate substrate via a facile imprinting method. Through optimizing the treatment conditions, including polarization voltage, polarization time, and the concentration of P(VDF‐TrFE), the resulting device exhibits remarkable detectivity (7.3 × 10¹² Jones), fast response time (88/154 µs) at zero bias, as well as outstanding mechanical stability. The excellent performance is attributed to the efficient charge separation and transport originating from the highly oriented 1D transport pathway and the polarization‐induced internal electric field within P(VDF‐TrFE)/perovskite hybrid nanowire arrays.     

All‐Carbon‐Electrode‐Based Endurable Flexible Perovskite Solar Cells

Endured, low‐cost, and high‐performance flexible perovskite solar cells (PSCs) featuring lightweight and mechanical flexibility have attracted tremendous attention for portable power source applications. However, flexible PSCs typically use expensive and fragile indium–tin oxide as transparent anode and high‐vacuum processed noble metal as cathode, resulting in dramatic performance degradation after continuous bending or thermal stress. Here, all‐carbon‐electrode‐based flexible PSCs are fabricated employing graphene as transparent anode and carbon nanotubes as cathode. All‐carbon‐electrode‐based flexible devices with and without spiro‐OMeTAD (2,2′,7,7′‐tetrakis‐(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene) hole conductor achieve power conversion efficiencies (PCEs) of 11.9% and 8.4%, respectively. The flexible carbon‐electrode‐based solar cells demonstrate superior robustness against mechanical deformation in comparison with their counterparts fabricated on flexible indium–tin oxide substrates. Moreover, all carbon‐electrode‐based flexible PSCs also show significantly enhanced stability compared to the flexible devices with gold and silver cathodes under continuous light soaking or 60 °C thermal stress in air, retaining over 90% of their original PCEs after 1000 h. The promising durability and stability highlight that flexible PSCs are fully compatible with carbon materials and pave the way toward the realization of rollable and low‐cost flexible perovskite photovoltaic devices.     

A Solution‐Processed UV‐Sensitive Photodiode Produced Using a New Silicon Nanocrystal Ink

This article presents a simple and effective method of functionalizing hydrogen‐terminated silicon (Si) nanocrystals (NCs) to form a high‐quality colloidal Si NC ink with short ligands that allow charge transport in nanocrystal solid films. Si NCs fabricated by laser‐pyrolysis and acid etching are passivated with allyl disulfide via ultraviolet (UV)‐initiated hydrosilylation to form a stable colloidal Si NC ink. Then a Si NC‐based photodiode is directly fabricated in air from this ink. Only a solution‐processed poly(3,4‐ethylenedioxy‐thiophene):poly(styrene sulfonate) (PEDOT: PSS) electron blocking layer and top‐ and bottom‐contacts are needed along with the Si NC layer to construct the device. A Schottky‐junction at the interface between the Si NC absorber layer and aluminum (Al) back electrode drives charge separation in the device under illumination. The unpackaged Si NC‐based photodiode exhibites a peak photoresponse of 0.02 A W^?1 to UV light in air, within an order of magnitude of the response of commercially available gallium phosphide (GaP), gallium nitride (GaN), and silicon carbide (SiC) based photodetectors. This provides a new pathway to large‐area, low‐cost solution‐processed UV photodetectors on flexible substrates and demonstrates the potential of this new silicon nanocrystal ink for broader applications in solution‐processed optoelectronics.     

Reducible‐Shell‐Derived Pure‐Copper‐Nanowire Network and Its Application to Transparent Conducting Electrodes

The concept of using core Cu nanowires (CuNWs) that are conformally encapsulated by a reducible fugitive material for transparent conducting electrodes (TCEs) with high oxidation stability is presented. By the chemical reaction of an acid with surface oxide and hydroxide, a uniform surface shell layer is readily obtained on each CuNW upon adding lactic acid to the CuNW dispersion. The Cu lactate shell prevents the core CuNW from oxidizing during storage and film formation, enabling the core Cu nanowires to maintain their characteristic optoelectronic properties. Through simple thermal annealing under a nitrogen atmosphere, the Cu lactate shell is easily decomposed to expose the underlying pure Cu, providing an effective way to produce a pure‐CuNW‐network TCE with a sheet resistance of 19.8 Ω sq^?1 and an optical transmittance of 85.5% at 550 nm. The application of the CuNW‐based TCE to the transparent top electrode in organometallic halide perovskite solar cells is further demonstrated for the first time, yielding a power‐conversion efficiency 9.88% as compared to that of 13.39% for conventional perovskite solar cells with an indium–tin‐oxide electrode. This study proposes the high feasibility of these CuNWs as a vacuum‐free and noble‐metal‐free transparent‐window electrode in perovskite solar cells.     

Ultrahigh‐Performance Flexible and Self‐Powered Photodetectors with Ferroelectric P(VDF‐TrFE)/Perovskite Bulk Heterojunction

Flexible and self‐powered perovskite photodetectors attract widespread research interests due to their potential applications in portable and wearable optoelectronic devices. However, the reported devices mainly adopt an independent layered structure with complex fabrication processes and high carrier recombination. Herein, an integrated ferroelectric poly(vinylidene‐fluoride‐trifluoroethylene) (P(VDF‐TrFE)) and perovskite bulk heterojunction film photodetector on the polyethylene naphthalate substrate is demonstrated. Under the optimum treatment conditions (the polarization voltage and time, and the concentration of P(VDF‐TrFE)), the photodetector exhibits a largely enhanced performance compared to the pristine perovskite device. The resulting device exhibits ultrahigh performance with a large detectivity (1.4 × 10¹³ Jones) and fast response time (92/193 µs) at the wavelength of 650 nm. The improved performance is attributed to the fact that the polarized P(VDF‐TrFE)/perovskite hybrid film provides a stronger built‐in electric field to facilitate the separation and transportation of photogenerated carriers. These findings provide a new route to design self‐powered photodetectors from the aspect of device structure and carrier transport.     

Near‐Infrared and Short‐Wavelength Infrared Photodiodes Based on Dye–Perovskite Composites

Organohalide perovskites have emerged as promising light‐sensing materials because of their superior optoelectronic properties and low‐cost processing methods. Recently, perovskite‐based photodetectors have successfully been demonstrated as both broadband and narrowband varieties. However, the photodetection bandwidth in perovskite‐based photodetectors has so far been limited to the near‐infrared regime owing to the relatively wide band gap of hybrid organohalide perovskites. In particular, short‐wavelength infrared photodiodes operating beyond 1 µm have not yet been realized with organohalide perovskites. In this study, narrow band gap organic dyes are combined with hybrid perovskites to form composite films as active photoresponsive layers. Tuning the dye loading allows for optimization of the spectral response characteristics and excellent charge‐carrier mobilities near 11 cm² V^?1 s^?1, suggesting that these composites combine the light‐absorbing properties or IR dyes with the outstanding charge‐extraction characteristics of the perovskite. This study demonstrates the first perovskite photodiodes with deep near‐infrared and short‐wavelength infrared response that extends as far as 1.6 µm. All devices are solution‐processed and exhibit relatively high responsivity, low dark current, and fast response at room temperature, making this approach highly attractive for next‐generation light‐detection techniques.     

Photoresponsive Transistors Based on Lead‐Free Perovskite and Carbon Nanotubes

Lead‐free perovskite materials are exhibiting bright application prospects in photodetectors (PDs) owing to their low toxicity compared with traditional lead perovskites. Unfortunately, their photoelectric performance is constrained by the relatively low charge conductivity and poor stability. In this work, photoresponsive transistors based on stable lead‐free bismuth perovskites CsBi₃I₁₀ and single‐walled carbon nanotubes (SWCNTs) are first reported. The SWCNTs significantly strengthen the dissociation and transportation of the photogenerated charge carriers, which lead to dramatically improved photoresponsivity, while a decent I_light/I_dark ratio over 10² can be maintained with gate modulation. The devices exhibit high photoresponsivity (6.0 × 10⁴ A W^?1), photodetectivity (2.46 × 10¹⁴ jones), and external quantum efficiency (1.66 × 10⁵%), which are among the best reported results in lead‐free perovskite PDs. Furthermore, the excellent stability over many other lead‐free perovskite PDs is demonstrated over 500 h of testing. More interestingly, the device also shows the application potential as a light‐stimulated synapse and its synaptic behaviors are demonstrated. In summary, the lead‐free bismuth perovskite‐based hybrid phototransistors with multifunctional performance of photodetection and light‐stimulated synapse are first demonstrated in this work.     

Fabrication of a Large‐Area Al‐Doped ZnO Nanowire Array Photosensor with Enhanced Photoresponse by Straining

The photosensing properties of flexible large‐area nanowire (NW)‐based photosensors are enhanced via in situ Al doping and substrate straining. A method for efficiently making nanodevices incorporating laterally doped NWs is developed and the strain‐dependent photoresponse is investigated. Photosensors are fabricated by directly growing horizontal single‐crystalline Al‐doped ZnO NW arrays across Au microelectrodes patterned on a flexible SiO₂/steel substrate to enhance the transportation of carriers and the junction between NWs and electrodes. The Raman spectrum of the Al:ZnO NWs, which have an average diameter and maximum length of around 40 nm and 6.8 μm, respectively, shows an Al‐related peak at 651 cm^?1. The device shows excellent photosensing properties with a high ultraviolet/visible rejection ratio, as well as extremely high maximum photoresponsivity and sensitivity at a low bias. Increasing the tensile strain from 0 to 5.6% linearly enhances the photoresponsivity from 1.7 to 3.8 AW^?1 at a bias of 1 V, which is attributed to a decrease in the Schottky barrier height resulting from a piezo‐photonic effect. The high‐performance flexible NW device presented here has applications in coupling measurements of light and strain in a flexible photoelectronic nanodevice and can aid in the development of better flexible and integrated photoelectronic systems.     

Oriented Crystallization of Mixed‐Cation Tin Halides for Highly Efficient and Stable Lead‐Free Perovskite Solar Cells

As the most promising lead‐free branch, tin halide perovskites suffer from the severe oxidation from Sn²⁺ to Sn⁴⁺, which results in the unsatisfactory conversion efficiency far from what they deserve. In this work, by facile incorporation of methylammonium bromide in composition engineering, formamidinium and methylammonium mixed cations tin halide perovskite films with ultrahighly oriented crystallization are synthesized with the preferential facet of (001), and that oxidation is suppressed with obviously declined trap density. MA⁺ ions are responsible for that impressive orientation while Br^‐ ions account for their bandgap modulation. Depending on high quality of the optimal MA_0.25FA_0.75SnI_2.75Br_0.25 perovskite films, their device conversion efficiency surges to 9.31% in contrast to 5.02% of the control formamidinium tin triiodide perovskite (FASnI₃) device, along with almost eliminated hysteresis. That also results in the outstanding device stability, maintaining above 80% of the initial efficiency after 300 h of light soaking while the control FASnI₃ device fails within 120 h. This paper definitely paves a facile and effective way to develop high‐efficiency tin halide perovskites solar cells, optoelectronic devices, and beyond.