共查询到18条相似文献,搜索用时 140 毫秒
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不同偏置条件下NPN双极晶体管的电离辐照效应 总被引:1,自引:0,他引:1
对NPN双极晶体管进行了不同剂量率、不同偏置条件下的电离辐射实验。研究结果表明:同一剂量率辐照时,无论是低剂量率还是高剂量率,辐照损伤均是基-射结反向偏置时最大,零偏置次之,正偏置最小。NPN双极晶体管在3种偏置下均可观察到明显的低剂量率辐照损伤增强(ELDRS)效应,且偏置条件对ELDRS效应很明显,表现为基-射结正向偏置ELDRS效应最为显著,零偏次之,反向偏置最次。对出现这一实验结果的机理进行了探讨。 相似文献
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研究了10位双极模数转换器(ADC)在60Coγ射线不同剂量率、不同偏置条件辐照下的电离辐射效应及退火特性。研究结果发现,此类模数混合信号电路在不同偏置和不同剂量率辐照下的电离辐照响应有较大差异。同一电参数既表现出低剂量率损伤增强效应(ELDRS)又表现出时间相关效应(TDE)。研究结果进一步表明,低剂量率辐照0 V偏置是最劣偏置;与之相反,高剂量率辐照5 V偏置是最劣偏置,而加电阻偏置对辐照损伤有一定的抑制作用。最后,结合空间电荷模型和边缘电场效应对其辐照损伤差异及退火机理进行了初步探讨。 相似文献
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The conventional viewpoint of saturation in junction transistors, from a device point of view, considers the excess minority carriers in the base region. A different viewpoint considers the majority carriers in the base. The important elements then are the number of these carriers stored in the transistor and whether they are stored in the active base region, the extrinsic base region, the collector body, or the epitaxial layer. The storage of carriers in the active base region plays a relatively minor role in the storage effect for most modern transistors because of the small volume of semiconductor material involved. In alloy, diffused, and epitaxial transistors the storage of carriers (electrons in a PNP transistor) is shown to be in the last three regions named above, respectively; in none of these transistor types is the storage region identifiable as the active base region. This new viewpoint leads to well-accepted storage-time expressions for alloy and diffused transistors and to new storage-time expressions for epitaxial transistors. Detailed calculations of the primary photocurrent have been made for three practical transistor construction types that relate this current to basic device parameters and to the electrical storage time. In addition, the radiation storage time has been calculated in terms of the electrical storage time for epitaxial transistors. Examples of these calculations are given and the results presented. 相似文献
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A set of experiments was performed at the White Sands Missile Range Fast-Burst Reactor Facility in which measurements were made of the annealing of three types of transistors (two NPN and one PNP) which were irradiated while biased off. Anneal factors as high as 5 or 6 were observed in the NPN devices when turned on tens of milliseconds after the neutron burst. The PNP device (2N2875) showed an anneal factor of nearly 4 when turned on 29 msec after the radiation pulse. The injection dependence of the annealing is clearly evident. 相似文献
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In the investigation of base and collector current as a function of the emitter-to-base voltage, previous studies have shown that neutroninduced base current has components originating in the emitter space charge region as well as the neutral base region. This study shows that while the low injection level neutron-induced base current is dominated by the space charge component, the high injection behavior appears to be controlled by recombination in the neutral base region. Additional experiments performed in special tetrode transistors and van der Pauw-type samples indicate that changes in collector current are dominated by recombination in the neutral base, while changes in base doping and mobility have only a secondary effect. These conclusions are reached from experiments on transistors with a ring emitter, on tetrode-type test transistors, and on special Hall-effect devices, and by a detailed analysis of the emission crowding characteristics of a "ring-dot" geometry device. 相似文献
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Data for predicting transistor gain degradation in a neutron radiation environment were obtained from experimental studies of the variation of the radiation damage constant KT as a function of temperature and current during both measurement and irradiation. Relatively small spreads in the values of KT were obtained when the individual base transit times were measured and the radiation exposures were precisely determined. Radiation damage effect data from 20 different n-p-n silicon transistor types were obtained and normalized to the same minority carrier concentration in the base region, using the transit time and the VBE-Ic characteristics of the specific transistors. The resulting relative dispersions of the damage constant for minority carrier densities of 1015/cm3 and 1016/cm3 were typically 15 to 20 percent. These dispersions indicate that electrical measurements of transistor physical parameters can provide reasonably accurate predictions of the gain degradation for a wide variety of transistors without additional radiation testing of specific transistor types. 相似文献
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《IEEE transactions on nuclear science》1969,16(6):87-95
Experimentally determined permanent and transient effects of radiation on the electrical characteristics of junction field effect transistors (JFET's) are presented for JFET's exposed to energetic neutron doses up to 1016 neutrons/cm2 (E > 10 Kev) and ionizing radiation up to 8×109 rad/sec. Results of extensive transient radiation experiments using the AFCRL Linac are presented for various combinations of channel doping, gate resistor values, gate voltages, drain voltages, gold doping and dose rates. Limited new experimental data is presented on neutron damage. Existing neutron degradation data on hardened JFET's is summarized. The JFET neutron degradation theory is summarized and refined. 相似文献
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By irradiation of the surface structure of silicon planar transistors with a narrow electron beam adjusted parallel to the pn-junctions of the devices it was possible to show in a very direct manner that the increase in base current occurs only if the beam is directed to the immediate vicinity of the emitter-base pn-junction. Subjecting the collector-base pn-junction and the remainder of the transistor surface to radiation has no effect on the current gain. A comparison of the radiation damage to bipolar silicon planar transistors in metal packages and plastic envelopes shows that the packaging method has a strong influence on the degradation in current gain if the pn-junctions are reverse-biased during the irradiation. The resistance of bipolar planar transistors to ionizing radiation can be improved considerably if the device is subjected to a high dose of ionizing radiation under conditions at which the damage anneals out immediately. The cause for this phenomenon mainly is a decrease of the concentration of interface states effected by this treatment. Reductions of the increase in base/collector current ratio of one order of magnitude have been obtained. 相似文献