Directed Gas Phase Formation of Silene (H2SiCH2)

The silene molecule (H₂SiCH₂; X¹A₁) has been synthesized under single collision conditions via the bimolecular gas phase reaction of ground state methylidyne radicals (CH) with silane (SiH₄). Exploiting crossed molecular beams experiments augmented by high-level electronic structure calculations, the elementary reaction commenced on the doublet surface through a barrierless insertion of the methylidyne radical into a silicon-hydrogen bond forming the silylmethyl (CH₂SiH₃; X²A′) complex followed by hydrogen migration to the methylsilyl radical (SiH₂CH₃; X²A′). Both silylmethyl and methylsilyl intermediates undergo unimolecular hydrogen loss to silene (H₂SiCH₂; X¹A₁). The exploration of the elementary reaction of methylidyne with silane delivers a unique view at the widely uncharted reaction dynamics and isomerization processes of the carbon–silicon system in the gas phase, which are noticeably different from those of the isovalent carbon system thus contributing to our knowledge on carbon silicon bond couplings at the molecular level.     

Directed Gas Phase Formation of the Elusive Silylgermylidyne Radical (H3SiGe,X2A′′)

The previously unknown silylgermylidyne radical (H₃SiGe; X²A′′) was prepared via the bimolecular gas phase reaction of ground state silylidyne radicals (SiH; X²Π) with germane (GeH₄; X¹A₁) under single collision conditions in crossed molecular beams experiments. This reaction begins with the formation of a van der Waals complex followed by insertion of silylidyne into a germanium-hydrogen bond forming the germylsilyl radical (H₃GeSiH₂). A hydrogen migration isomerizes this intermediate to the silylgermyl radical (H₂GeSiH₃), which undergoes a hydrogen shift to an exotic, hydrogen-bridged germylidynesilane intermediate (H₃Si(μ-H)GeH); this species emits molecular hydrogen forming the silylgermylidyne radical (H₃SiGe). Our study offers a remarkable glance at the complex reaction dynamics and inherent isomerization processes of the silicon-germanium system, which are quite distinct from those of the isovalent hydrocarbon system (ethyl radical; C₂H₅) eventually affording detailed insights into an exotic chemistry and intriguing chemical bonding of silicon-germanium species at the microscopic level exploiting crossed molecular beams.     

Gas Phase Formation of Methylgermylene (HGeCH3)

The methylgermylene species (HGeCH₃; X¹A′) has been synthesized via the bimolecular gas phase reaction of ground state methylidyne radicals (CH) with germane (GeH₄) under single collision conditions in crossed molecular beams experiments. Augmented by electronic structure calculations, this elementary reaction was found to proceed through barrierless insertion of the methylidyne radical in one of the four germanium-hydrogen bonds on the doublet potential energy surface yielding the germylmethyl (CH₂GeH₃; X²A′) collision complex. This insertion is followed by a hydrogen shift from germanium to carbon and unimolecular decomposition of the methylgermyl (GeH₂CH₃; X²A′) intermediate by atomic hydrogen elimination leading to singlet methylgermylene (HGeCH₃; X¹A′). Our investigation provides a glimpse at the largely unknown reaction dynamics and isomerization processes of the carbon-germanium system, which are quite distinct from those of the isovalent carbon system thus providing insights into the intriguing chemical bonding of organo germanium species on the most fundamental, microscopic level.     

Gas Phase Preparation of the Elusive Monobridged Ge(μ-H)GeH Molecule through Nonadiabatic Reaction Dynamics

The hitherto elusive monobridged Ge(μ-H)GeH (X¹A′) molecule was prepared in the gas phase by bimolecular reaction of atomic germanium with germane (GeH₄). Electronic structure calculations revealed that this reaction commenced on the triplet surface with the formation of a van der Waals complex, followed by insertion of germanium into a germanium-hydrogen bond over a submerged barrier to form the triplet digermanylidene intermediate (HGeGeH₃); the latter underwent intersystem crossing from the triplet to the singlet surface. On the singlet surface, HGeGeH₃ predominantly isomerized through two successive hydrogen shifts prior to unimolecular decomposition to Ge(μ-H)GeH isomer, which is in equilibrium with the vinylidene-type (H₂GeGe) and dibridged (Ge(μ-H₂)Ge) isomers. This reaction leads to the formation of cyclic dinuclear germanium molecules, which do not exist on the isovalent C₂H₂ surface, thus deepening our understanding of the role of nonadiabatic reaction dynamics in preparing nonclassical, hydrogen-bridged isomers carrying main group XIV elements.     

Gas‐Phase Formation of the Disilavinylidene (H2SiSi) Transient

The hitherto elusive disilavinylidene (H₂SiSi) molecule, which is in equilibrium with the mono‐bridged (Si(H)SiH) and di‐bridged (Si(H₂)Si) isomers, was initially formed in the gas‐phase reaction of ground‐state atomic silicon (Si) with silane (SiH₄) under single‐collision conditions in crossed molecular beam experiments. Combined with state‐of‐the‐art electronic structure and statistical calculations, the reaction was found to involve an initial formation of a van der Waals complex in the entrance channel, a submerged barrier to insertion, intersystem crossing (ISC) from the triplet to the singlet manifold, and hydrogen migrations. These studies provide a rare glimpse of silicon chemistry on the molecular level and shed light on the remarkable non‐adiabatic reaction dynamics of silicon, which are quite distinct from those of isovalent carbon systems, providing important insight that reveals an exotic silicon chemistry to form disilavinylidene.     

Gas‐Phase Synthesis of the Benzyl Radical (C6H5CH2)

Dicarbon (C₂), the simplest bare carbon molecule, is ubiquitous in the interstellar medium and in combustion flames. A gas‐phase synthesis is presented of the benzyl radical (C₆H₅CH₂) by the crossed molecular beam reaction of dicarbon, C₂(X¹Σ_g⁺, a³Π_u), with 2‐methyl‐1,3‐butadiene (isoprene; C₅H₈; X¹A′) accessing the triplet and singlet C₇H₈ potential energy surfaces (PESs) under single collision conditions. The experimental data combined with ab initio and statistical calculations reveal the underlying reaction mechanism and chemical dynamics. On the singlet and triplet surfaces, the reactions involve indirect scattering dynamics and are initiated by the barrierless addition of dicarbon to the carbon–carbon double bond of the 2‐methyl‐1,3‐butadiene molecule. These initial addition complexes rearrange via multiple isomerization steps, leading eventually to the formation of C₇H₇ radical species through atomic hydrogen elimination. The benzyl radical (C₆H₅CH₂), the thermodynamically most stable C₇H₇ isomer, is determined as the major product.     

Structures and mutual transformations of isomers of germylium ions (CH<Subscript>3</Subscript>)H<Subscript>2</Subscript>Ge<Superscript>+</Superscript> and (CH<Subscript>3</Subscript>)<Subscript>2</Subscript>HGe<Superscript>+</Superscript> and their silicon analogs

The potential energy surfaces of the (CH₃)_nH_3?n M⁺ ions, where n = 1, 2; M = Si, Ge, were scanned using the B3LYP method with 6–31G* and aug-cc-pVDZ basis sets. The major attention was given to isomeric species having the form of complexes of the HM⁺ and CH₃M⁺ ions with hydrogen, methane, and ethane molecules. These species were characterized previously neither by experimental nor by theoretical methods. It was found that these species become more stable in going from Si to Ge; the complex [CH₃Ge⁺CH₄] is the second isomer in the energy after (CH₃)₂HGe⁺. However, the heights of the activation barriers to formation of these complexes from the most stable isomer, though decreasing in going from Si to Ge, remain relatively high and, what is particularly important, somewhat exceed the activation barrier to formation of the complex [H₃Ge⁺·C₂H₄].     

Reaktionen von Lithiumhydridosilylamiden RR′(H)Si–N(Li)R″ mit Chlortrimethylsilan in Tetrahydrofuran und unpolaren Lösungsmitteln: N‐Silylierung und/oder Cyclodisilazanbildung

Reactions of Lithium Hydridosilylamides RR′(H)Si–N(Li)R″ with Chlorotrimethylsilane in Tetrahydrofuran and Nonpolar Solvents: N‐Silylation and/or Formation of Cyclodisilazanes The lithiumhydridosilylamides RR′(H)Si–N(Li)R″ ( 2 a : R = R′ = CHMe₂, R″ = SiMe₃; 2 b : R = R′ = Ph, R″ = SiMe₃; 2 c : R = R′ = CMe₃, R″ = SiMe₃; 2 d : R = R′ = R″ = CMe₃; 2 e : R = Me, R′ = Si(SiMe₃)₃, R″ = CMe₃; 2 f – 2 h : R = R′ = Me, f : R″ = 2,4,6‐Me₃C₆H₂, g : R″ = SiH(CHMe₂)₂, h : R″ = SiH(CMe₃)₂; 2 i : R = R′ = CMe₃, R″ = SiH(CMe₃)₂) were prepared by reaction of the corresponding hydridosilylamines RR′(H)Si–NHR″ 2 a – 2 i with n‐butyllithium in equimolar ratio in n‐hexane. The unknown amines 1 e – 1 i and amides 2 f – 2 i have been characterized spectroscopically. The wave numbers of the Si–H stretching vibrations and ²⁹Si–¹H coupling constants of the amides are less than of the analogous amines. This indicates a higher hydride character for the hydrogen atom of the Si–H group in the amide in comparison to the amines. The ²⁹Si‐NMR chemical shifts lie in the amides at higher field than in the amines. The amides 2 a – 2 c and 2 e – 2 g react with chlorotrimethylsilane in THF to give the corresponding N‐silylation products RR′(H)Si–N(SiMe₃)R″ ( 3 a – 3 c , 3 e – 3 g ) in good yields. In the reaction of 2 i with chlorotrimethylsilane in molar ratio 1 : 2,33 in THF hydrogen‐chlorine exchange takes place and after hydrolytic work up of the reaction mixture [(Me₃C)₂(Cl)Si]₂NH ( 5 a ) is obtained. The reaction of the amides 2 a – 2 c , 2 f and 2 g with chlorotrimethylsilane in m(p)‐xylene and/or n‐hexane affords mixtures of N‐substitution products RR′(H)Si–N(SiMe₃)R″ ( 3 a – 3 c , 3 f , 3 g ) and cyclodisilazanes [RR′Si–NR″]₂ ( 6 a – 6 c , 6 f , 6 g ) as the main products. In case of the reaction of 2 h the cyclodisilazane 6 h was obtained only. 2 c – 2 e show a very low reactivity toward chlorotrimetyhlsilane in m‐xylene and toluene resp.. In contrast to Me₃SiCl the reactivity of 2 d toward Me₃SiOSO₂CF₃ and Me₂(H)SiCl is significant higher. 2 d react with Me₃SiOSO₂CF₃ and Me₂(H)SiCl in n‐hexane under N‐silylation to give RR′(H)Si–N(SiMe₃)R″ ( 3 d ) and RR′(H)Si–N(SiHMe₂)R″ ( 3 d ′) resp. The crystal structures of [Me₂Si–NSiMe₃]₂ ( I ) ( 6 f , 6 g and 6 h ) have been determined.     

Umsetzung von N-Trimethylmetall(IVb)-trialkylphosphiniminen mit Halogenwasserstoffen

Reaction of N-Trimethylmetal(IVb) Trialkylphosphine Imines with Hydrogen Halides Investigations of the reaction of N-trimethylmetal(IVb)-substituted phosphine imines with hydrogen have been carried out. With one mole of HX phosphonium halides of the general formula [R₃P? NH? MMe₃]^⊕X^? (R = CH₃, C₂H₅; M = Si, Ge, Sn; X = Cl, Br, J) are obtained. A second mole of HX causes M? N bond cleavage, yielding aminophosphonium halides, [R₃P? NH₂]^⊕X^?.     

[Ge9{Si(SiMe3)3}2{Ge(SiMe3)3}]–: The Mixed Substituted Metalloid Germanium Cluster and the Intermetalloid Cluster [ZnGe18{Si(SiMe3)3}4{Ge(SiMe3)3}2]

The novel metalloid germanium cluster [Ge₉(Hyp)₂Hyp^Ge]^– ( 1 ) was synthesized, exhibiting two different bulky groups [Hyp = Si(SiMe₃)₃; Hyp^Ge = Ge(SiMe₃)₃]. Further reaction of 1 with ZnCl₂ gives the derivative [ZnGe₁₈(Hyp)₄(Hyp^Ge)₂] ( 2 ) in good yield, showing that the substitution of Si(SiMe₃)₃ by Ge(SiMe₃)₃ within a metalloid Ge₉R₃^– compound leads to a comparable reactivity. 1 and 2 are characterized by NMR spectroscopy, mass spectrometry ( 1 ) and single crystal structure analyses ( 2 ). 1 and 2 are the first metalloid germanium clusters bearing germyl groups.     

H/D isotope effect on charge‐inverted hydrogen‐bonded systems: Systematic classification of three different types in H3XH…YH3 (X = C,Si, or Ge,and Y = B,Al, or Ga) with multicomponent calculation

Three different H/D isotope effect in nine H₃XH(D)^…YH₃ (X = C, Si, or Ge, and Y = B, Al, or Ga) hydrogen‐bonded (HB) systems are classified using MP2 level of multicomponent molecular orbital method, which can take account of the nuclear quantum nature of proton and deuteron. First, in the case of H₃CH(D)^…YH₃ (Y = B, Al, or Ge) HB systems, the deuterium (D) substitution induces the usual H/D geometrical isotope effect such as the contraction of covalent R(C? H(D)) bonds and the elongation of intermolecular R(H(D)^…Y) and R(C^…Y) distances. Second, in the case of H₃XH(D)^…YH₃ (X = Si or Ge, and Y = Al or Ge) HB systems, where H atom is negatively charged called as charge‐inverted hydrogen‐bonded (CIHB) systems, the D substitution leads to the contraction of intermolecular R(H(D)^…Y) and R(X^…Y) distances. Finally, in the case of H₃XH(D)^…BH₃ (X = Si or Ge) HB systems, these intermolecular R(H(D)^…Y) and R(X^…Y) distances also contract with the D substitution, in which the origin of the contraction is not the same as that in CIHB systems. The H/D isotope effect on interaction energies and spatial distribution of nuclear wavefunctions are also analyzed. © 2015 Wiley Periodicals, Inc.     

A theoretical study of electronic effects in alkyne‐linked reactive intermediates: (nitrenoethynyl)methylenes, (nitrenoethynyl)silylenes,and (nitrenoethynyl)germylenes

Acetylene‐linked reactive intermediates of (nitrenoethynyl)‐X‐methylenes, (nitrenoethynyl)‐X‐silylenes, and (nitrenoethynyl)‐X‐germylenes are almost experimentally unreachable (X–M–C≡C–N; X=H ( 1 ), CN ( 2 ), OH ( 3 ), NH₂ ( 4 ), NO₂ ( 5 ), and CHO ( 6 ); M=C, Si, and Ge). The effects of the electron‐donating and electron withdrawing groups were compared and contrasted at seven levels of theory. All singlet species as ground states with one local open‐shell singlet carbene subunit (π¹π¹) and another local open‐shell singlet nitrene subunit (π¹π¹) were found to be more stable than their corresponding triplets including one local open‐shell singlet carbene (δ¹π¹) (or one local closed‐shell singlet carbene [δ²π⁰]) and another local triplet nitrene subunit (π¹π¹) with 45.94–77.996 kcal/mol singlet–triplet energy gap (ΔE_s‐t). Their relative silylenes and germylenes made reduction of ΔE_s‐t, so the triplet ground states were found for species 3 _Si , 4 _Si , 5 _Si , 2 _Ge , 3 _Ge , 4 _{Ge ,} and 5 _Ge . All the singlet silylenes/germylenes formed by one local closed‐shell singlet silylenes/germylenes (δ²π⁰) and one local closed‐shell singlet nitrene subunit (π²π⁰). Also, one local closed‐shell singlet silylene/germylene subunit (δ²π⁰) and one local triplet nitrene subunit (π¹π¹) were observed for triplet silylenes/germylenes. The singlet and triplet species 3 _Si , 4 _Si , 3 _Ge , and 4 _Ge , due to their electrophilic (Si₄/Ge₄) and nucleophilic (X₅) centers, could be identified as intermediates in chemical reactions.     

Isomerization of silicenium and germenium ions in the systems C<Subscript>4</Subscript>H<Subscript>11</Subscript>M<Superscript>+</Superscript> (M = Si,Ge)

Equilibrium structures of the isomers and transition states of their interconversion in the system C₄H₁₁M⁺ (M = Si, Ge) have been obtained at theB3LYP level of theory using the cc-pVTZ basis set. The structures of these stationary points are close for Si and Ge; the most stable isomer in both systems is the tertiary cation (C₂H₅)(CH₃)₂M⁺, the second in energy is complex with ethylene [(CH₃)₂HM·C₂H₄]⁺. The secondary cation (C₂H₅)₂HM⁺ is third in energy isomer, the height of the barrier of interconversion for these three cations being practically independent on M. However, for M = Ge a substantial decrease in the energy of isomeric forms corresponding to complexes with alkanes is observed. As a result, in the system C₄H₁₁Ge⁺ the fourth in energy is isomer [(C₂H₅)Ge·C₂H₆]⁺ rather than [(C₂H₅)H₂Ge·C₂H₄]⁺ as for M = Si. Nevertheless, the height of the barriers for transition into these structures, although decreasing from M = Si to Ge, remain rather high, and the most favorable route of decomposition in both systems is the elimination of ethylene.     

Density functional study of XH4 (XSi and Ge) reactivity upon dissociative adsorption onto the Si(100) surface

Total energy calculations based on density functional theory (DFT) with generalized gradient approximation (GGA) and ultrasoft pseudopotential approximation and an analysis tool of atom‐resolved density of states (ADOS) have been used to investigate (1) the energetic profiles for the possible initial dissociative adsorption of XH₄ (X?Si and Ge) onto the Si(100)? (2 × 2) surface to evaluate their reactivity and (2) the effect of surface electronic states of Si(100)? (2 × 2) on gaseous molecular precursors XH₄ (X?Si and Ge) during initial dissociative adsorption to understand the factors governing their reactivity. Our calculated lower‐energy barrier for initial dissociative adsorption of GeH₄ is due to the forming of stronger bond of Si? H between H within GeH₄ and buckled‐down Si atom on the Si(100)? (2 × 2) surface accompanying the larger extent of unbuckling of the buckled Si?Si dimer on the Si(100)? (2 × 2) surface at the transition state. Our evaluated better reactivity for GeH₄ than SiH₄ (a factor of around 14.6) is slightly larger than observed higher reactivity for GeH₄ than SiH₄ (a factor of between 2 and 5 depending on the incident kinetic energy) employed supersonic molecular bean techniques. Finally, our calculated ADOS indicate that the surface electronic states of buckled Si?Si dimer on the Si(100)? (2 × 2) surface energetically favorably participate in the transition state during GeH₄ initial dissociative adsorption to reduce the energy barrier, i.e., enhance its reactivity, in comparison with SiH₄ initial dissociative adsorption onto the Si(100)? (2 × 2) surface under the same reaction conditions. © 2003 Wiley Periodicals, Inc. Int J Quantum Chem, 2004     

Reactions of silicon-, germanium- and tin-containing carbene complexes of tungsten Ph3E-CW(OBu)3 (E=Si, Ge, Sn) with hydrogen chloride: crystal structures of carbene complexes Ph3E-CHWCl2(OBu)2 (E=Si, Ge)

The novel organosilicon, -germanium and -tin-containing carbene complexes of tungsten of the type Ph₃E-CHWCl₂(OBu^t)₂ (E=Si, Ge, Sn) have been prepared by the reaction of heteroelement-containing carbene complexes of tungsten Ph₃E-CW(OBu^t)₃ (E=Si, Ge, Sn) with hydrogen chloride. The tin-containing carbene complex was identified in solution by ¹H NMR spectroscopy. Silicon- and germanium-containing carbene complexes were isolated in high yields as crystalline solids and characterized by elemental analysis, IR, ¹H NMR, ¹³C NMR and ²⁹Si NMR spectroscopy and X-ray diffraction studies. The geometry of the W atoms in the compounds can be described as a distorted square pyramid.     

Ab initio chemical kinetics for reactions of H atoms with SiHx (x = 1–3) radicals and related unimolecular decomposition processes

Hydrogen atoms and SiH_x (x = 1–3) radicals coexist during the chemical vapor deposition (CVD) of hydrogenated amorphous silicon (a‐Si:H) thin films for Si‐solar cell fabrication, a technology necessitated recently by the need for energy and material conservation. The kinetics and mechanisms for H‐atom reactions with SiH_x radicals and the thermal decomposition of their intermediates have been investigated by using a high high‐level ab initio molecular‐orbital CCSD (Coupled Cluster with Single and Double)(T)/CBS (complete basis set extrapolation) method. These reactions occurring primarily by association producing excited intermediates, ¹SiH₂, ³SiH₂, SiH₃, and SiH₄, with no intrinsic barriers were computed to have 75.6, 55.0, 68.5, and 90.2 kcal/mol association energies for x = 1–3, respectively, based on the computed heats of formation of these radicals. The excited intermediates can further fragment by H₂ elimination with 62.5, 44.3, 47.5, and 56.7 kcal/mol barriers giving ¹Si, ³Si, SiH, and ¹SiH₂ from the above respective intermediates. The predicted heats of reaction and enthalpies of formation of the radicals at 0 K, including the latter evaluated by the isodesmic reactions, SiH_x + CH₄ = SiH₄ + CH_x, are in good agreement with available experimental data within reported errors. Furthermore, the rate constants for the forward and unimolecular reactions have been predicted with tunneling corrections using transition state theory (for direct abstraction) and variational Rice–Ramsperger–Kassel–Marcus theory (for association/decomposition) by solving the master equation covering the P,T‐conditions commonly employed used in industrial CVD processes. The predicted results compare well experimental and/or computational data available in the literature. © 2013 Wiley Periodicals, Inc.     

Über die Synthese von Tris(trimethylsilyl)silyl-kalium, -rubidium und -caesium und die Molekülstrukturen zweier Toluolsolvate

About the Synthesis of Tris(trimethylsilyl)silyl Potassium, Rubidium and Cesium and the Molecular Structures of two Toluene Solvates . Solventfree tris(trimethylsilyl)silyl potassium ( 1 ), rubidium ( 2 ) and cesium ( 3 ) are obtained by the reaction of the zink group bis[tris(trimethylsilyl)silyl] derivatives with the appropriate alkali metal in n-pentane. Addition of benzene or toluene to the colourless powders yields deeply coloured solutions. From these solutions single crystals of tris(trimethylsilyl)silyl rubidium—toluene (2/1) ( 2 a ) and tris(trimethylsilyl)silyl cesium—toluene (2/3) ( 3 a ) suitable for X-ray structure analysis are iso- lated [ 2a : orthorhombic; P2₁2₁2₁; a = 1 382.1(3); b = 1 491.7(5); c = 2 106.3(6) pm; Z = 4 (dimers); 3a : orthorhombic; P2₁2₁2₁; a = 2 131.0(6); b = 2 833.1(2); c = 925.2(2) pm; Z = 4 (dimers)]. The central structure moieties are folded four-membered Rb₂Si₂ and Cs₂Si₂ rings, respectively. Small Si? Si? Si angles (100 to 104°) on the one hand and extreme highfield ²⁹Si-NMR shifts of the central silicon atoms on the other hand indicate a strong charge transfer from the alkali metal atoms to the tris(trimethylsilyl)silyl fragments, i.e. mainly ionic interactions between alkalimetal and silicon atoms.     

Ab initio study of the formation of bis-heterocyclic compound involving Si and Ge from dichlorosilylene germylidene (Cl2Si=Ge:) and ethene

The mechanism of the cycloaddition reaction between singlet state dichlorosilylene germylidene (Cl₂Si=Ge:) and ethene has been investigated with CCSD(T)//MP2/6-31G* method, from the potential energy profile, we predict that the reaction has one dominant reaction pathway. The presented rule of the reaction is that the two reactants firstly form a Si-heterocyclic four-membered ring germylene through the [2+2] cycloaddition reaction. Due to the sp ³ hybridization of the Ge: atom in Si-heterocyclic four-membered ring germylene, the Si-heterocyclic four-membered ring germylene further combined with the ethene to form a bis-heterocyclic compound with Si and Ge.     

A stable silagermene (tBu3Si)2Si=Ge(mes)2 (mes = 2,4,6‐trimethylphenyl): Synthesis,X‐ray crystal structure,and thermal isomerization

A stable silagermene, 1,1‐bis(tri‐tert‐butylsilyl)‐2,2‐bis(2,4,6‐trimethylphenyl)silagermene, was synthesized by the reaction of dilithiosilane (^tBu₃Si)₂SiLi₂ with dichlorodimesitylgermane. Its structure was determined by spectroscopic data and X‐ray crystallography, which showed the SiGe length to be 2.2769(8) Å. The silagermene underwent isomerization at 100ˆC to form the corresponding symmetrically substituted isomer (E)‐1,2‐bis(tri‐tert‐butylsilyl)‐1,2‐bis(2,4,6‐trimethylphenyl)silagermene. © 2008 Wiley Periodicals, Inc. Heteroatom Chem 19:649–653, 2008; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/hc.20503     

An N‐Heterocyclic Silylene‐Stabilized Digermanium(0) Complex

The synthesis of an N‐heterocyclic silylene‐stabilized digermanium(0) complex is described. The reaction of the amidinate‐stabilized silicon(II) amide [LSiN(SiMe₃)₂] ( 1 ; L=PhC(NtBu)₂) with GeCl₂?dioxane in toluene afforded the Si^II–Ge^II adduct [L{(Me₃Si)₂N}Si→GeCl₂] ( 2 ). Reaction of the adduct with two equivalents of KC₈ in toluene at room temperature afforded the N‐heterocyclic carbene silylene‐stabilized digermanium(0) complex [L{(Me₃Si)₂N}Si→ Ge?Ge←Si{N(SiMe₃)₂}L] ( 3 ). X‐ray crystallography and theoretical studies show conclusively that the N‐heterocyclic silylenes stabilize the singlet digermanium(0) moiety by a weak synergic donor–acceptor interaction.