Mg_(0.15)Zn_(0.85)O:Tb合金薄膜的阴极射线发光性质研究

采用溶胶凝胶方法成功地制备了掺杂稀土铽离子的 Zn O和 Mg0 .1 5Zn0 .85薄膜。通过对 X射线衍射结果的分析表明 ,稀土离子替代了 Zn2 +的格位 ,进入了半导体基质的晶格中。从阴极射线发光结果可以发现 ,在Mg0 .1 5Zn0 .85O基质中 ,可以观察到来源于稀土铽离子各能级的发射 ,而 Zn O:Tb的薄膜只能观察到较强的铽离子 5D4 — 7F5能级的跃迁。这可能是由于 Mg0 .1 5Zn0 .85O基质的能隙 (3 .65 e V)比 Zn O更宽 (3 .3 e V) ,其对铽离子的能量传递更有效的缘故。     

Nd2O3掺杂BaZr0.2Ti0.8O3陶瓷的介电性能

在溶胶-凝胶法制备钛酸钡(BaZr0.2Ti0.8O3)超细粉体的过程中,使用液相掺杂的方式在溶胶过程中进行了稀土元素Nd的掺杂。掺杂摩尔分数为0、0.001、0.002、0.003、0.004和0.005。掺杂改性后的BaZr0.2Ti0.8O3粉体,通过X-射线衍射(XRD)测试,结果表明在摩尔分数为0.005以内的稀土Nd掺杂并未改变BaZr0.2Ti0.8O3的钙钛矿结构。粉体烧结的陶瓷介电性能得到较大的改善:介电常数由3 389提高到4 493,而介电损耗在60 Hz时由1.4%降低到0.35%。     

Al2O3陶瓷激光铣削试验研究

采用Nd∶YAG脉冲激光器对Al2 O3陶瓷进行铣削加工试验。系统研究了工艺参数对铣削量和铣削面质量的影响规律 ,并利用优化的铣削工艺对Al2 O3陶瓷进行多种形状的铣削加工。     

Ce:Y_3Al_5O_(12)透明陶瓷在白光LED中的应用研究

采用固相反应法、真空烧结制备了高光学质量的Ce:YAG(Ce:Y3Al5O12)透明陶瓷,在可见光区的透射率大于80%。分别研究了不同Ce3+掺杂浓度(原子数分数分别为0.1%、0.3%、0.5%、1.0%)和不同厚度(0.5、1.0、2.0 mm)的Ce:YAG陶瓷的流明效率,显色指数和色温等白光发光二极管(LED)性能,采用Ce:YAG陶瓷和商业树脂进行LED器件封装,获得了130 lm/W的光效。结果表明,Ce:YAG透明荧光陶瓷有望成为适合大功率LED器件的荧光材料。     

氧化铝基陶瓷Mo-Mn法金属化机理分析及实验研究

本文从玻璃相扩散迁移、Mo的化学态和添加Mn的作用几个方面对氧化铝基陶瓷高温Mo-Mn法金属化机理进行了分析和总结,给出了高纯氧化铝陶瓷（包括99氧化铝陶瓷、透明氧化铝陶瓷）一些实验研究结果。通过对实验结果的分析和讨论,指出了高纯氧化铝陶瓷金属化配方设计、工艺参数控制等方面应把握的技术要点。实验研究结果对工程中高纯氧化铝陶瓷的金属化和封接工作具有一定的指导作用。     

Er2O3掺杂对BaTiO3陶瓷介电性能的影响

采用溶胶-凝胶法制备了掺杂Er2O3的BaTiO3陶瓷。测试结果表明,掺杂Er2O3能降低BaTiO3陶瓷的电阻率,且在开始时其电阻率随着掺杂量的增大而升高,在掺杂x(Er2O3)=0.003(摩尔分数)时电阻率最高,然后随掺杂量的升高而降低,在掺杂x(Er2O3)=0.007时电阻率最低,从纯BaTiO3陶瓷的2.6 TΩ.m下降为18 GΩ.m,此变化规律有异于La,Ce,Nd,Sm等稀土元素掺杂的规律。掺杂Er2O3使BaTiO3陶瓷的介电性能发生明显变化,掺杂x(Er2O3)为0.001和0.002时,可改善BaTiO3陶瓷的介电性能和频率特性,具有较好的频率稳定性。掺杂Er2O3使BaTiO3陶瓷的居里温度升高为130.9℃,交流电导随着温度的升高而增大,并在居里温度点附近达到最大。     

氧化铝陶瓷领域的中国专利申请现状分析

针对氧化铝陶瓷领域的中国专利申请进行了相关分析,通过对专利申请量的统计分析,研究了氧化铝陶瓷领域的发展趋势;通过对国内外来华专利申请量的对比分析,研究了国内外来华申请量的发展趋势以及国内主要申请人的专利申请分布,以了解氧化铝陶瓷领域的中国专利申请现状及趋势,为氧化铝陶瓷领域的研究与工业化生产提供一定的参考.     

Novel Sol–Gel Nano‐Glass–Ceramics Comprising Ln3+‐Doped YF3 Nanocrystals: Structure and High Efficient UV Up‐Conversion

Transparent glass‐ceramics containing Ln³⁺‐doped YF₃ nanocrystals are successfully obtained under adequate thermal treatment of precursor sol–gel glasses for the first time, to the best of our knowledge. Precipitation of YF₃ nanocrystals is confirmed by X‐ray diffraction and high‐resolution transmission electron microscopy images. An exhaustive structural analysis is carried out using Eu³⁺ and Sm³⁺ as probe ions of the final local environment in the nano‐structured glass–ceramic. Noticeable changes in luminescence spectra, related to relative intensity and Stark structure of band components, along with remarkably different lifetime values, allow us to discern between ions residing in precipitated YF₃ nanocrystals and those remaining in a glassy environment. A large fraction of optically active ions is efficiently partitioned into nanocrystals of small size, around 11 nm. Moreover, bright and efficient up‐conversion, including very intense high‐energy emissions in the UV range, due to 4‐ and 5‐infrared photon processes, are achieved in Yb³⁺–Tm³⁺ co‐doped samples. Up‐conversion mechanisms are analysed in depth by means of intensity dependence on sensitiser Yb³⁺ concentration and pump power.     

Highly Efficient Blue‐Emitting Bi‐Doped Cs2SnCl6 Perovskite Variant: Photoluminescence Induced by Impurity Doping

Lead halide perovskites show excellent optoelectronic properties but are unsatisfactory in terms of stability and toxicity. Herein, bismuth (Bi)‐doped lead‐free inorganic perovskites Cs₂SnCl₆:Bi are reported as blue emissive phosphors. Upon Bi doping, the originally nonluminous Cs₂SnCl₆ exhibits a highly efficient deep‐blue emission at 455 nm, with a Stokes shift of 106 nm and a high photoluminescence quantum yield (PLQY) close to 80%. Hybrid density functional theory calculations suggest the preferred formation of [Bi_Sn+V_Cl] defect complex, which is believed to be responsible for the optical absorption and the associated blue emission. The Cs₂SnCl₆:Bi also shows impressive thermal and water stability due to its inorganic nature and the formation of protective BiOCl layer. White light‐emitting diodes (LEDs) are constructed using Cs₂SnCl₆:Bi and commercial yellow phosphors combined with commercial UV LED chips, giving the Commission Internationale de I'Eclairage (CIE) color coordinates of (0.36, 0.37). This work represents a significant step toward the realization of highly efficient, stable, and environmentally benign next‐generation solid‐state lighting.     

(Al2O3)f/Al复合材料疲劳损伤模式的SEM研究

通过扫描电子显微镜(SEM)对(Al2O3)f／Al复合材料的疲劳断口和纵截面组织结构进行了观察，研究了复合材料的疲劳损伤模式。研究结果表明：该复合材料兼有钛基和树脂基纤维复合材料疲劳损伤的特点，高应力下由单个裂纹的起源和生长导致复合材料的失效；低应力下，疲劳损伤模式包括纤维劈裂、众多基体裂纹和单个基体裂纹的横向扩展，其中纤维劈裂是主控机制。其更高的疲劳极限可归因于低应力下纤维的纵向劈裂。     

Zr‐Doped Indium Oxide (IZRO) Transparent Electrodes for Perovskite‐Based Tandem Solar Cells

Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite‐based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, the excellent properties of Zr‐doped indium oxide (IZRO) transparent electrodes for such applications, with improved near‐infrared (NIR) response, compared to conventional tin‐doped indium oxide (ITO) electrodes, are shown. Optimized IZRO films feature a very high electron mobility (up to ≈77 cm² V^?1 s^?1), enabling highly infrared transparent films with a very low sheet resistance (≈18 Ω □^?1 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ≈5% for IZRO within the solar spectrum (250–2500 nm range), to be compared with ≈10% for commercial ITO. Fundamentally, it is found that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In₂O₃) films due to Zr‐doping. Overall, on a four‐terminal perovskite/silicon tandem device level, an absolute 3.5 mA cm^?2 short‐circuit current improvement in silicon bottom cells is obtained by replacing commercial ITO electrodes with IZRO, resulting in improving the PCE from 23.3% to 26.2%.     

Tb(p-MBA)3phen与PVK混合体系发光性质研究

研究了铽配合物Tb(p-MBA)3phen与聚乙烯咔唑PVK共掺杂体系的电致发光(EL)和光致发光(PL)特性。结果发现,在EL中,PVK的发光完全被抑制,只能看到明显的Tb^3 绿光发射;而在PL中,除了Tb^3 发光外,还可以看到明显的PVK发光。这是由于两种发光机理不同造成的。通过测量材料的发射光谱和激发光谱,初步探讨了器件的发光机理,认为Tb^3 的发光可能来源于2个方面：1)PVK到稀土配合物的Foerester能量传递;2)PVK作为一种空穴传输材料,而稀土配合物作为电子陷阱,受激的空穴和电子直接被稀土配合物俘获,在稀土配合物上形成激子复合发光。所制作的单层器件的最大亮度达24．8cd／m^2。     

掺铟对(Bi0.5Na0.5)0.93Ba0.07TiO3压电陶瓷的影响

采用直接反应烧结法制备掺铟的(Bi0.5Na0.5)0.93Ba0.07TiO3无铅压电陶瓷,研究了铟掺杂对(Bi0.5Na0.5)1-xBaxTiO3(BNBT)压电陶瓷压电性能、相组成及显微组织的影响。结果表明,添加适量的氧化铟后,该陶瓷仍为纯钙钛矿相结构,其材料组成在准同型相界处三方相减少,四方相增加;适量铟掺杂可抑制晶粒长大,有利于晶粒均匀生长,增大晶粒各向异性。当掺杂氧化铟的质量分数为0.16%时,获得了高的压电参数,其压电常数d33达到205 pC/N,厚度机电耦合系数kt、厚度与径向耦合系数之比kt/kp分别达到0.5、2.77。     

ZrO2掺杂对Ba(Zn1/3Ta2/3)O3陶瓷介电性能的影响

采用固相反应烧结法制备了ZrO2掺杂的Ba(Zn1/3Ta2/3)O3微波介质陶瓷,研究了陶瓷的烧结特性和介电性能。结果表明,ZrO2掺杂能有效降低Ba(Zn1/3Ta2/3)O3陶瓷的烧结温度,改善陶瓷的微波介电性能。当x(ZrO2)=4%时,Ba(Zn1/3Ta2/3)O3陶瓷致密化烧结温度由纯相时的1 600℃降至1 300℃,同时陶瓷材料的微波介电性能达到最佳值,即介电常数εr=34.79,品质因数与频率的乘积Q×f=148 000(8GHz),谐振频率温度系数τf=0.3×10-6/℃。     

Li‐Doped Cr2MnO4: A New p‐Type Transparent Conducting Oxide by Computational Materials Design

To accelerate the design and discovery of novel functional materials, here, p‐type transparent conducting oxides, an inverse design approach is formulated, integrating three steps: i) articulating the target properties and selecting an initial pool of candidates based on “design principles”, ii) screening this initial pool by calculating the “selection metrics” for each member, and iii) laboratory realization and more‐detailed theoretical validation of the remaining “best‐of‐class” materials. Following a design principle that suggests using d5⁵ cations for good p‐type conductivity in oxides, the Inverse Design approach is applied to the class of ternary Mn(II) oxides, which are usually considered to be insulating materials. As a result, Cr₂MnO₄ is identified as an oxide closely following “selection metrics” of thermodynamic stability, wide‐gap, p‐type dopability, and band‐conduction mechanism for holes (no hole self‐trapping). Lacking an intrinsic hole‐producing acceptor defect, Li is further identified as a suitable dopant. Bulk synthesis of Li‐doped Cr₂MnO₄ exhibits at least five orders of magnitude enhancement of the hole conductivity compared to undoped samples. This novel approach of stating functionality first, then theoretically searching for candidates that merits synthesis and characterization, promises to replace the more traditional non‐systematic approach for the discovery of advanced functional materials.     

Bi2O3蒸汽掺杂的Ba1—xSixTiO3半导化陶瓷的PTCR效应

施主掺杂的钛酸钡陶瓷的ＰＴＣＲ效应来源于晶界上的钡空位。在Ｂｉ２Ｏ３蒸汽两次掺杂的样品中发现了大于８个量级的ＰＴＣＲ效应。在烧成过程中的Ｂｉ２Ｏ３蒸汽掺杂时，高氧分压下可以产生更高的钡空位浓度，因而样品具有更高的ＰＴＣＲ效应。     

Al2O3陶瓷激光多道铣削温度场有限元模拟

激光铣削时能量是以局部热源的形式照射到基体表面上,集中的能量会引起铣削过程中温度场分布不均匀和不稳定。以Al2O3陶瓷材料激光铣削为例,建立了激光多道铣削的三维温度场有限元模型。利用ANSYS软件中的APDL(ANSYS Parametric Design Language)语言模拟了多道铣削时热源的移动。模拟结果表明:随着铣削过程的进行,后面的铣削道光斑中心的温度比前面的铣削道的中心温度高,且具有的热影响区也大;温度梯度变化最大的地方是在扫描方向发生改变的铣削样件边沿区域。将模拟结果的最高温度和文献中的实验结果进行比对,一致性较好。     

MnO2对Pb(Ni1/3 Nb2/3)O3基复相陶瓷介电性能的影响

研究了少量MnO2添加对Pb(Ni1/3Nb2/3)O3基复相陶瓷的介电常数温度特性和频率特性、介质损耗及电阻率的影响。结果表明,少量MnO2的加入,改善了复相陶瓷的介温特性和频率特性,降低了介电常数;同时降低了介质损耗,特别是低频高温下的介质损耗,提高了电阻率。对MnO2在复相陶瓷中所起的作用进行了分析。