Plasmonic‐Tuned Flash Cu Nanowelding with Ultrafast Photochemical‐Reducing and Interlocking on Flexible Plastics

Herein, a high‐performance copper nanowire (Cu NW) network (sheet resistance ≈ 17 Ω sq^?1, transmittance 88%) fabricated by plasmonic‐tuned flash welding (PFW) with ultrafast interlocking and photochemical reducing is reported, which greatly enhance the mechanical and chemical stability of Cu NWs. Xenon flash spectrum is tuned in an optimized distribution (maximized light intensity at 600 nm wavelength) through modulation of electron kinetic energy in the lamp by generating drift potential for preferential photothermal interactions. High‐intensity visible light is emitted by the plasmonic‐tuned flash, which strongly improves Cu nanowelding without oxidation. Near‐infrared spectrum of the flash induced an interlocking structure of NW/polyethylene terephthalate interface by exciting Cu NW surface plasmon polaritons (SPPs), increasing adhesion of the Cu nanonetwork by 208%. In addition, ultrafast photochemical reduction of Cu NWs is accomplished in air by flash‐induced electron excitations and relevant chemical reactions. The PFW effects of localized surface plasmons and SPPs on junction welding and adhesion strengthening of Cu network are theoretically studied as physical behaviors by finite‐difference time‐domain simulations. Finally, a transparent resistive memory and a touch screen panel are demonstrated by using the flash‐induced Cu NWs, showing versatile and practical uses of PFW‐treated Cu NW electrodes for transparent flexible electronics.     

Highly Flexible and Stretchable Nanowire Superlattice Fibers Achieved by Spring‐Like Structure of Sub‐1 nm Nanowires

Conventional inorganic nanowire (NW) fibers are usually not stretchable and elastic, which may limit their practical applications. Inspired by the similarity between inorganic sub‐1 nm NWs and polymer chains in dimension, and helical spring‐like structure of cellulose in cherry bark, highly flexible and stretchable NW superlattice fibers composed of sub‐1 nm GdOOH NWs are fabricated. The NW fibers could be twined, bent, twisted, and tied without any damage. When the strain is less than 10%, the fibers present elastic deformation. The elongation at break of the fibers usually reaches ≈40–50% and the highest elongation could reach ≈86%. Excellent flexibility and stretchability of the NW fibers are attributed to the well‐aligned spring‐like NWs assembled superlattice, which are demonstrated by scanning electron microscopy tests, synchrotron small‐angle X‐ray scattering, and obvious birefringence. Moreover, NW‐nanoparticle (NP) fibers are fabricated, inspired by inorganic nanoparticle–reinforced polymers. The strength is improved compared with the NW fibers. Based on this work, it is possible to fabricate multifunctional, flexible, and stretchable inorganic NW materials composed of different inorganic sub‐1 nm NWs, which may be useful in practical applications.     

High‐Performance Integrated ZnO Nanowire UV Sensors on Rigid and Flexible Substrates

Due to the large surface area‐to‐volume ratio and high quality crystal structure, single nanowire (NW)‐based UV sensors exhibit very high on/off ratios between photoresponse current and dark current. Practical applications require a large‐scale and low‐cost integration, compatibility to flexible electronics, as well as reasonably high photoresponse current that can be detected without high‐precision measurement systems. In this paper, NW‐based UV sensors were fabricated in large‐scale by integrating multiple NWs connected in parallel via the contact printing method. Linear scaling of the photoresponse current with the number of NWs is demonstrated. Integrated ZnO NW UV sensors were fabricated on rigid glass and flexible polyester (PET) substrates at the macroscopic scale. The flexible and rigid sensors performed comparably, exhibiting on/off current ratios approximately three orders of magnitude higher than sensors made from polycrystalline ZnO thin films. Under UV irradiance of 4.5 mW cm^?2 and 3 V bias, photoresponse currents and on/off current ratios for the rigid and flexible UV sensors reached 12.22 mA and 82 000, and 14.1 mA and 120 000, respectively. This result suggests that lateral integration of semiconductor NWs is an effective approach to large‐scale fabrication of flexible NW sensors that inherit the merits of single‐NW‐based systems with unaffected performance compared to using rigid substrate.     

Highly Conductive,Bendable, Embedded Ag Nanoparticle Wire Arrays Via Convective Self‐Assembly: Hybridization into Ag Nanowire Transparent Conductors

The optoelectrical properties of Ag nanowire (NW) networks are improved by incorporating the NWs into highly conductive ordered arrays of Ag nanoparticle wires (NPWs) fabricated via surfactant‐assisted convective self‐assembly. The NPW–NW hybrid conductor displays a transmittance (T) of 90% at 550 nm and a sheet resistance (R _s) of 5.7 Ω sq^?1, which is superior to the corresponding properties of the NW network showing a R _s of 14.1 Ω sq^?1 at a similar T. By the modified wettability of a donor substrate and the capillarity of water, the sintered NPW–NW hybrid conductors are perfectly transferred onto an UV‐curable photopolymer film, and the embedded hybrid conductors exhibit excellent electromechanical properties. The R _s and T of the NPW arrays can be predicted by using a simple model developed to calculate the width and height of the hexagonal close‐packed particles formed during the convective self‐assembly. The numerical analysis reveals that the maximum Haacke figure of merit of the NW networks is increased considerably from 0.0260 to 0.0407 Ω^?1 by integration with the NPW array. The highly conductive NPW arrays generated using a simple, low‐cost, and nonlithographic process can be applied to enhancing the performances of other transparent conductors, such as carbon nanotubes, metal oxides, and graphenes.     

全透明低回滞s-SWCNT/AgNW薄膜晶体管的可控制备

利用高纯度、高均一性的半导体型单壁碳纳米管(s-SWCNT)网络薄膜作为薄膜晶体管的沟道材料,以高透明度、低薄膜电阻的银纳米线(Ag NW)网络薄膜作为源、漏电极,在玻璃基底上制备了大面积、高透明度的碳纳米管薄膜晶体管阵列,并使用聚甲基丙烯酸甲酯(PMMA)薄膜在器件表面通过干法封装获得了较低回滞的电子器件,得到了整体透明度达到82%以上的器件。提出的器件制备方法不仅制备材料易得,不需要高温过程,而且能够实现器件的大面积制备,对碳纳米管薄膜晶体管的全透明柔性化进程具有推进作用。     

High‐Performance Ferroelectric Memory Based on Phase‐Separated Films of Polymer Blends

High‐performance polymer memory is fabricated using blends of ferroelectric poly(vinylidene‐fluoride‐trifluoroethylene) (P(VDF‐TrFE)) and highly insulating poly(p‐phenylene oxide) (PPO). The blend films spontaneously phase separate into amorphous PPO nanospheres embedded in a semicrystalline P(VDF‐TrFE) matrix. Using low molecular weight PPO with high miscibility in a common solvent, i.e., methyl ethyl ketone, blend films are spin cast with extremely low roughness (R_rms ≈ 4.92 nm) and achieve nanoscale phase seperation (PPO domain size < 200 nm). These blend devices display highly improved ferroelectric and dielectric performance with low dielectric losses (<0.2 up to 1 MHz), enhanced thermal stability (up to ≈353 K), excellent fatigue endurance (80% retention after 10⁶ cycles at 1 KHz) and high dielectric breakdown fields (≈360 MV/m).     

Single‐Crystalline p‐Type Zn3As2 Nanowires for Field‐Effect Transistors and Visible‐Light Photodetectors on Rigid and Flexible Substrates

Zn₃As₂ is an important p‐type semiconductor with the merit of high effective mobility. The synthesis of single‐crystalline Zn₃As₂ nanowires (NWs) via a simple chemical vapor deposition method is reported. High‐performance single Zn₃As₂ NW field‐effect transistors (FETs) on rigid SiO₂/Si substrates and visible‐light photodetectors on rigid and flexible substrates are fabricated and studied. As‐fabricated single‐NW FETs exhibit typical p‐type transistor characteristics with the features of high mobility (305.5 cm² V^?1 s^?1) and a high I_on/I_off ratio (10⁵). Single‐NW photodetectors on SiO₂/Si substrate show good sensitivity to visible light. Using the contact printing process, large‐scale ordered Zn₃As₂ NW arrays are successfully assembled on SiO₂/Si substrate to prepare NW thin‐film transistors and photodetectors. The NW‐array photodetectors on rigid SiO₂/Si substrate and flexible PET substrate exhibit enhanced optoelectronic performance compared with the single‐NW devices. The results reveal that the p‐type Zn₃As₂ NWs have important applications in future electronic and optoelectronic devices.     

Room‐Temperature Nanosoldering of a Very Long Metal Nanowire Network by Conducting‐Polymer‐Assisted Joining for a Flexible Touch‐Panel Application

As an alternative to the brittle and expensive indium tin oxide (ITO) transparent conductor, a very simple, room‐temperature nanosoldering method of Ag nanowire percolation network is developed with conducting polymer to demonstrate highly flexible and even stretchable transparent conductors. The drying conducting polymer on Ag nanowire percolation network is used as a nanosoldering material inducing strong capillary‐force‐assisted stiction of the nanowires to other nanowires or to the substrate to enhance the electrical conductivity, mechanical stability, and adhesion to the substrate of the nanowire percolation network without the conventional high‐temperature annealing step. Highly bendable Ag nanowire/conducting polymer hybrid films with low sheet resistance and high transmittance are demonstrated on a plastic substrate. The fabricated flexible transparent electrode maintains its conductivity over 20 000 cyclic bends and 5 to 10% stretching. Finally, a large area (A4‐size) transparent conductor and a flexible touch panel on a non‐flat surface are fabricated to demonstrate the possibility of cost‐effective mass production as well as the applicability to the unconventional arbitrary soft surfaces. These results suggest that this is an important step toward producing intelligent and multifunctional soft electric devices as friendly human/electronics interface, and it may ultimately contribute to the applications in wearable computers.     

Oriented Growth and Assembly of Ag@C@Co Pentagonalprism Nanocables and their Highly Active Selected Catalysis Along the Edges for Dehydrogenation

Magnetic double‐shelled Ag@C@Co pentagonalprism nanocables are fabricated using a synchronous growth and oriented assembly process, in which the second shell of Co is arranged along the edges of Ag@C pentagonalprism nanowires (NWs). The resulting Ag@C@Co pentagonalprism nanocables exhibit an average diameter of ≈400 nm and consist of Ag core NWs with diameter of ≈200 nm and C middle layers with a thickness of ≈10 nm as well as outer Co shells with a thickness of ≈100 nm. UV‐vis absorption spectroscopy shows that the Co shell on Ag@C NWs can damp the surface plasmon resonance (SPR) of the Ag core wires and lead to a red‐shifted SPR absorption peak. Additionally, the Ag@C@Co nanocables have the ferromagnetic behavior, which can be controlled by modulating the shell density. The resulting magnetic Ag@C@Co nanocables exert excellent selected catalytic activity along the edges toward the dehydrogenation of ammonia borane aqueous under ambient conditions at room temperature.     

All-solution-processed foldable transparent electrodes of Ag nanowire mesh and metal matrix films for flexible electronics

In this study, we developed foldable transparent electrodes composed of Ag nanowire (AgNW) networks welded by Ag nanoparticles (AgNPs) reduced from commercial Ag ink. All the processes used were solution-based. Using the Meyer rod method, uniform AgNW networks were roll-to-roll coated on large-area polymer substrates, and the spin-coated AgNPs firmly welded the AgNWs together at junctions and to substrates. The hybrid films consisting of AgNWs and the Ag film matrix exhibited higher electrical conductivity (5.0–7.3 × 10⁵ S/m) than and equivalent transparency (90–95%) to the AgNW networks. Furthermore, the hybrid films showed significantly better bending stability than AgNW networks. During cyclic bending tests to 10,000 cycles at 5 mm bending radius and even when almost folded with r_b of 1 mm, the resistivity changes were negligible because AgNWs were tightly held and adhered to the substrate by Ag films covering wires, thereby hindering fracturing of AgNWs under tension. Because the films were fabricated at a low temperature, there was no oxidation on the surfaces of the films. Hence, flexible organic light-emitting diodes (f-OLEDs) were successfully fabricated on polyethylene terephthalates (PET) coated with the hybrid films. The f-OLED in the bent state was comparable to that in the flat state, validating the potential applications of these transparent hybrid films as electrodes in various flexible electronics.     

Nickel Silicide Nanowire Arrays for Anti‐Reflective Electrodes in Photovoltaics

Conductive nanowires (NWs) provide several advantages as a template and electrode material for solar cells due to their favorable light scattering properties. While the majority of NW solar cell architectures studied are based on semiconductor materials, metallic NWs could provide equivalent anti‐reflection properties, while acting as a low‐resistance back contact for charge transport, and facilitate light scattering in thin layers of semiconductors coated on the surface. However, fabrication of single‐crystalline highly anti‐reflective NWs on low‐cost, flexible substrates remains a challenge to drive down the cost of NW solar cells. In this study, metallic Ni_xSi NW arrays are fabricated by a simple, bottom‐up, and low‐cost method based on the thermal decomposition of silane on the surface of flexible Ni foil substrates without the need for lithography, etching or catalysts. The optical properties of these NW arrays demonstrate broadband suppression of reflection to levels below 1% from 350 nm to 1100 nm, which is among the highest values reported for NWs. A simple route to control the diameter and density of the NWs is introduced based on variations in a carrier gas flow rate. A high‐resolution TEM, XRD and TEM‐EDS study of the NWs reveals that they are single crystalline, with the phase and composition varying between Ni₂Si and NiSi. The nanowire resistivity is measured to be 10^?4 Ω‐cm, suggesting their use as an efficient back electrode material for nanostructured solar cells with favorable light scattering properties.     

Radio-Frequency Operation of Transparent Nanowire Thin-Film Transistors

In this letter, radio-frequency characterization of fully transparent thin-film transistors (TFTs) based on chemically synthesized nanowires (NWs) has been carried out. The NW TFTs show current-gain cutoff frequency $f_{T}$ of 109 MHz and power-gain cutoff frequency $f_{max}$ of 286 MHz. The TFTs were fabricated on glass substrates using aligned $hbox{SnO}_{2}$ NWs as the transistor channel and sputtered indium–tin–oxide films as the source–drain and gate electrodes. Besides exhibiting $≫$ 100-MHz operation frequencies, the transparent NW TFTs show a narrow distribution of performance metrics among different devices. These results suggest the NW-TFT approach may be promising for high-speed transparent and flexible integrated circuits fabricated on diverse substrates.      

Directly Deposited Antimony on a Copper Silicide Nanowire Array as a High-Performance Potassium-Ion Battery Anode with a Long Cycle Life

Antimony (Sb) is a promising anode material for potassium-ion batteries (PIBs) due to its high capacity and moderate working potential. Achieving stable electrochemical performance for Sb is hindered by the enormous volume variation that occurs during cycling, causing a significant loss of the active material and disconnection from conventional current collectors (CCs). Herein, the direct growth of a highly dense copper silicide (Cu₁₅Si₄) nanowire (NW) array from a Cu mesh substrate to form a 3D CC is reported that facilitates the direct deposition of Sb in a core-shell arrangement (Sb@Cu₁₅Si₄ NWs). The 3D Cu₁₅Si₄ NW array provides a strong anchoring effect for Sb, while the spaces between the NWs act as a buffer zone for Sb expansion/contraction during K–cycling. The binder-free Sb@Cu₁₅Si₄ anode displays a stable capacity of 250.2 mAh g⁻¹ at 200 mA g⁻¹ for over 1250 cycles with a capacity drop of ≈0.028% per cycle. Ex situ electron microscopy revealed that the stable performance is due to the complete restructuring of the Sb shell into a porous interconnected network of mechanically robust ligaments. Notably, the 3D Cu₁₅Si₄ NW CC is expected to be widely applicable for the development of alloying-type anodes for next-generation energy storage devices.     

Reduced Graphene Oxide Micromesh Electrodes for Large Area,Flexible, Organic Photovoltaic Devices

A laser‐based patterning technique—compatible with flexible, temperature‐sensitive substrates—for the production of large area reduced graphene oxide micromesh (rGOMM) electrodes is presented. The mesh patterning can be accurately controlled in order to significantly enhance the electrode transparency, with a subsequent slight increase in the sheet resistance, and therefore improve the tradeoff between transparency and conductivity of reduced graphene oxide (rGO) layers. In particular, rGO films with an initial transparency of ≈20% are patterned, resulting in rGOMMs films with a ≈59% transmittance and a sheet resistance of ≈565 Ω sq^?1, that is significantly lower than the resistance of ≈780 Ω sq^?1, exhibited by the pristine rGO films at the same transparency. As a proof‐of‐concept application, rGOMMs are used as the transparent electrodes in flexible organic photovoltaic (OPV) devices, achieving power conversion efficiency of 3.05%, the highest ever reported for flexible OPV devices incorporating solution‐processed graphene‐based electrodes. The controllable and highly reproducible laser‐induced patterning of rGO hold enormous promise for both rigid and flexible large‐scale organic electronic devices, eliminating the lag between graphene‐based and indium–tin oxide electrodes, while providing conductivity and transparency tunability for next generation flexible electronics.     

Highly Conductive Ordered Mesoporous Carbon Based Electrodes Decorated by 3D Graphene and 1D Silver Nanowire for Flexible Supercapacitor

Ordered mesoporous carbon (OMC) is considered one of the most promising materials for electric double layer capacitors (EDLC) given its low‐cost, high specific surface area, and easily accessed ordered pore channels. However, pristine OMC electrode suffers from poor electrical conductivity and mechanical flexibility, whose specific capacitance and cycling stability is unsatisfactory in flexible devices. In this work, OMC is coated on the surface of highly conductive three‐dimensional graphene foam, serving as both charge collector and flexible substrate. Upon further decoration with silver nanowires (Ag NWs), the novel architecture of Ag NWs/3D‐graphene foam/OMC (Ag‐GF‐OMC) exhibits exceptional electrical conductivity (up to 762 S cm^?1) and mechanical robustness. The Ag‐GF‐OMC electrodes in flexible supercapacitors reach a specific capacitance as high as 213 F g^?1, a value five‐fold higher than that of the pristine OMC electrode. Moreover, these flexible electrodes also exhibit excellent long‐term stability with >90% capacitance retention over 10 000 cycles, as well as high energy and power density (4.5 Wh kg^?1 and 5040 W kg^?1, respectively). This study provides a new procedure to enhance the device performance of OMC based supercapacitors, which is a promising candidate for the application of flexible energy storage devices.     

银纳米线与二氧化硅衬底表面摩擦力的测量

银纳米线是制作纳米光电子器件的理想材料,了解银纳米线与特定衬底间的摩擦特性对于器件的设计和制备工艺具有重要参考价值.本文利用原子力显微镜(AFM)研究银纳米线与二氧化硅衬底表面的摩擦特性,为提高摩擦力测量准确性,依次借助斜面法和横向力曲线分别标定了AFM探针的扭转弹性常数和光杠杆横向灵敏度,同时对扫描器引入的横向误差进行了补偿.利用AFM纳米操纵技术记录了单根银纳米线由静止到整体滑动的全过程,实验测得直径50 nm银纳米线与二氧化硅衬底表面的最大静摩擦线密度和滑动摩擦线密度分别为1.07 nN/nm和0.56 nN/nm.     

Fabrication of a Large‐Area Al‐Doped ZnO Nanowire Array Photosensor with Enhanced Photoresponse by Straining

The photosensing properties of flexible large‐area nanowire (NW)‐based photosensors are enhanced via in situ Al doping and substrate straining. A method for efficiently making nanodevices incorporating laterally doped NWs is developed and the strain‐dependent photoresponse is investigated. Photosensors are fabricated by directly growing horizontal single‐crystalline Al‐doped ZnO NW arrays across Au microelectrodes patterned on a flexible SiO₂/steel substrate to enhance the transportation of carriers and the junction between NWs and electrodes. The Raman spectrum of the Al:ZnO NWs, which have an average diameter and maximum length of around 40 nm and 6.8 μm, respectively, shows an Al‐related peak at 651 cm^?1. The device shows excellent photosensing properties with a high ultraviolet/visible rejection ratio, as well as extremely high maximum photoresponsivity and sensitivity at a low bias. Increasing the tensile strain from 0 to 5.6% linearly enhances the photoresponsivity from 1.7 to 3.8 AW^?1 at a bias of 1 V, which is attributed to a decrease in the Schottky barrier height resulting from a piezo‐photonic effect. The high‐performance flexible NW device presented here has applications in coupling measurements of light and strain in a flexible photoelectronic nanodevice and can aid in the development of better flexible and integrated photoelectronic systems.     

Zr‐Doped Indium Oxide (IZRO) Transparent Electrodes for Perovskite‐Based Tandem Solar Cells

Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite‐based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, the excellent properties of Zr‐doped indium oxide (IZRO) transparent electrodes for such applications, with improved near‐infrared (NIR) response, compared to conventional tin‐doped indium oxide (ITO) electrodes, are shown. Optimized IZRO films feature a very high electron mobility (up to ≈77 cm² V^?1 s^?1), enabling highly infrared transparent films with a very low sheet resistance (≈18 Ω □^?1 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ≈5% for IZRO within the solar spectrum (250–2500 nm range), to be compared with ≈10% for commercial ITO. Fundamentally, it is found that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In₂O₃) films due to Zr‐doping. Overall, on a four‐terminal perovskite/silicon tandem device level, an absolute 3.5 mA cm^?2 short‐circuit current improvement in silicon bottom cells is obtained by replacing commercial ITO electrodes with IZRO, resulting in improving the PCE from 23.3% to 26.2%.     

Solution‐Processed Metallic Nanowire Electrodes as Indium Tin Oxide Replacement for Thin‐Film Solar Cells

Solution processed silver nanowire (Ag NW) films are introduced as transparent electrodes for thin‐film solar cells. Ag NW electrodes were processed by doctor blade‐coating on glass substrates at moderate temperatures (less than 100 °C). The morphological, optical, and electrical characteristics of these electrodes were investigated as a function of processing parameters. For solar‐cell application, Ag NW electrodes with an average transparency of 90% between 450 and 800 nm and a sheet resistivity of ≈10 Ω per square were chosen. The performance of poly(3‐hexylthiophen‐2,5‐diyl):[6,6]‐phenyl‐C61‐butyric acid methyl ester (P3HT:PCBM) solar cells on Ag NW electrodes was found to match the performance of otherwise identical cells on indium tin oxide. Overall, P3HT:PCBM solar cells with an efficiency of 2.5% on transparent Ag NW electrodes have been realized.     

Novel Cu Nanowires/Graphene as the Back Contact for CdTe Solar Cells

Cu‐nanowire‐doped graphene (Cu NWs/graphene) is successfully incorporated as the back contact in thin‐film CdTe solar cells. 1D, single‐crystal Cu nanowires (NWs) are prepared by a hydrothermal method at 160 °C and 3D, highly crystalline graphene is obtained by ambient‐pressure CVD at 1000 °C. The Cu NWs/graphene back contact is obtained from fully mixing the Cu nanowires and graphene with poly(vinylidene fluoride) (PVDF) and N‐methyl pyrrolidinone (NMP), and then annealing at 185 °C for solidification. The back contact possesses a high electrical conductivity of 16.7 S cm^?1 and a carrier mobility of 16.2 cm² V^?1 s^?1. The efficiency of solar cells with Cu NWs/graphene achieved is up to 12.1%, higher than that of cells with traditional back contacts using Cu‐particle‐doped graphite (10.5%) or Cu thin films (9.1%). This indicates that the Cu NWs/graphene back contact improves the hole collection ability of CdTe cells due to the percolating network, with the super‐high aspect ratio of the Cu nanowires offering enormous electrical transport routes to connect the individual graphene sheets. The cells with Cu NWs/graphene also exhibit an excellent thermal stability, because they can supply an active Cu diffusion source to form an stable intermediate layer of CuTe between the CdTe layer and the back contact.