| 热壁外延制备InAs/Si(211)薄膜及其电学性能研究 |
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| 引用本文： | 何利利,张明,郭治平,刘翔,吴长树.热壁外延制备InAs/Si(211)薄膜及其电学性能研究[J].人工晶体学报,2017,46(12):2313-2318. |
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| 作者姓名： | 何利利 张明 郭治平 刘翔 吴长树 |
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| 作者单位： | 昆明理工大学材料科学与工程学院,昆明,650093;昆明物理研究所,昆明,650223 |
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| 基金项目： | 国家自然科学基金地区项目(61367008) |
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| 摘 要： | 采用热壁外延(Hot Wall Epitaxy,HWE)沉积系统在单晶Si(211)衬底表面制备了InAs薄膜,研究了不同生长温度(300℃、350℃、400℃、450℃和500℃)对薄膜材料结构及其电学性能的影响.通过X射线衍射(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、霍尔(Hall)测试等,对InAs/Si(211)薄膜的晶体结构、表面形貌及电学参数进行了测试分析.结果表明:采用HWE技术在Si(211)衬底表面成功制备了InAs薄膜,薄膜具有闪锌矿结构并沿(111)方向择优生长.随着生长温度从300℃升高到500℃,全峰半高宽(FWHM)先减小后增大,生长温度为400℃时薄膜的晶粒尺寸最大为73.4 nm,载流子浓度达到1022 cm-3,霍尔迁移率数值约为102 cm2/(V·s),说明优化生长温度能够降低InAs薄膜的缺陷复合,使薄膜结晶质量和电学性能得到提高.SEM及AFM的测试结果显示由于较高的晶格失配及Si衬底斜切面(211)的特殊取向,在Si(211)衬底上生长的InAs薄膜主要为三维层加岛状(S-K)生长模式,表面粗糙度(Ra)随温度的升高先减小后增大,400℃时薄膜的平均表面粗糙度Ra为48.37 nm.
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| 关 键 词： | InAs/Si(211)薄膜 热壁外延 生长温度 电学性能 |
Preparation of InAs/Si (211) Thin Films by Hot Wall Epitaxy and Their Electrical Properties |
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| HE Li-li,ZHANG Ming,GUO Zhi-ping,LIU Xiang,WU Chang-shu.Preparation of InAs/Si (211) Thin Films by Hot Wall Epitaxy and Their Electrical Properties[J].Journal of Synthetic Crystals,2017,46(12):2313-2318. |
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| Authors: | HE Li-li ZHANG Ming GUO Zhi-ping LIU Xiang WU Chang-shu |
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| Abstract: | High preferred orientation InAs films were prepared on the surface of single crystalline Si (211) substrates by Hot Wall Epitaxy ( HWE) deposition.The effects of growth temperatures (300 ℃, 350 ℃, 400℃, 450℃, and 500℃) on the structure and electrical properties of the films were studied in details.The phase structure , surface morphology , electrical and optical properties of the films were characterized by X-ray diffraction ( XRD ) , scanning electron microscopy ( SEM ) , atomic force microscopy ( AFM ) and hall measurements ( Hall ) . The results indicate that the InAs films are successfully deposited on the surface of Si (211) substrates by HWE technique .All the films were shown preferentially grown along the ( 111 ) direction with zinc blende structure .With the growth temperature increasing from 300℃ to 500℃, and the full width at half maximum (FWHM) of (111) peak decreases initially and then increases accordingly .The grain size , carrier concentration and Hall mobility of the InAs thin film reaches 73.4 nm, 1022 cm -3 and 102 cm2/(V· s) at 400℃ respectively, which suggests that the optimal growth temperature increases the carrier density significantly by degrading defect recombination .The crystal quality and electrical performance of the films were improved accordingly .The results of SEM and AFM show that the growth of InAs on Si ( 211 ) substrate were mainly three dimensional ( S-K ) growth mode , due to the high lattice mismatch and the special orientation of Si substrate tilted ( 211 ) plane.The surface roughness ( Ra ) decreases first and then increases with increasing of the growth temperatures .The Ra of the film at 400 ℃reaches 48.37 nm. |
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