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直流电弧等离子体喷射化学气相沉积法制备金刚石膜过程中冷阱的设计及作用
引用本文:陈良贤,邵思武,刘鹏,安康,郑宇亭,黄亚博,白明洁,张建军,刘金龙,魏俊俊,李成明.直流电弧等离子体喷射化学气相沉积法制备金刚石膜过程中冷阱的设计及作用[J].金刚石与磨料磨具工程,2022,42(2):150-155.
作者姓名:陈良贤  邵思武  刘鹏  安康  郑宇亭  黄亚博  白明洁  张建军  刘金龙  魏俊俊  李成明
作者单位:1.北京科技大学 新材料技术研究院, 北京 1000832.北京科技大学顺德研究生院,广东 佛山528399
基金项目:欧洲地平线计划;国家重点研发计划
摘    要:首先,介绍直流电弧等离子体喷射化学气相沉积法的原理以及气体循环系统的设计和其优缺点;其次,详细介绍冷阱系统的设计及其工作原理;最后,使用拉曼光谱和傅里叶变换红外光谱与光致发光光谱对比添加冷阱系统前后的金刚石薄膜的质量。结果表明:冷阱系统可以有效过滤循环气路中的热油气,避免杂质的掺入;在添加冷阱系统后,金刚石膜内掺入的杂质减少,金刚石拉曼峰半高宽降低到6.76 cm?1,接近于Ib型单晶金刚石的,且自支撑金刚石膜的晶体质量明显提高,光学透过率提升较大,在10.6 μm波长处达到68.4%。 

关 键 词:直流电弧等离子体喷射化学气相沉积法    金刚石膜    循环系统    冷阱
收稿时间:2021-11-20

Design and function of cold trap in the process of preparing diamond films by DC arc plasma jet chemical vapor deposition
CHEN Liangxian,SHAO Siwu,LIU Peng,AN Kang,ZHENG Yuting,HUANG Yabo,BAI Mingjie,ZHANG Jianjun,LIU Jinlong,WEI Junjun,LI Chengming.Design and function of cold trap in the process of preparing diamond films by DC arc plasma jet chemical vapor deposition[J].Diamond & Abrasives Engineering,2022,42(2):150-155.
Authors:CHEN Liangxian  SHAO Siwu  LIU Peng  AN Kang  ZHENG Yuting  HUANG Yabo  BAI Mingjie  ZHANG Jianjun  LIU Jinlong  WEI Junjun  LI Chengming
Affiliation:1.Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China2.Shunde Graduate School, University of Science and Technology Beijing, Foshan 528399, Guangdong, China
Abstract:Firstly, this experiment introduces the principle of the DC arc jet method, the design of the gas circulation system and its advantages and disadvantages. Secondly, the design of the cold trap system and its working principle are introduced in detail. Finally, Raman spectroscopy and Fourier transform infrared spectroscopy are used to compare the quality of the diamond films prepared before and after adding the cold trap system. The results show that the cold trap system can effectively filter the oil vapor in the circulating gas lines and avoid the incorporation of impurities in diamond films. After adding the cold trap system, the impurity in the diamond wafer is reduced, and the half width of the diamond Raman peak is reduced to 6.76 cm?1, which is closed to Ib type single crystal diamond. In addition, the crystal quality and the optical transmittance of the free-standing diamond wafer is significantly improved, and the transmittance at the wavelength of 10.6 μm reaches 68.4%. 
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