| 砂浆对固结磨具研磨垫研磨SiC工件的影响 |
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| 引用本文： | 金振弘,朱永伟,墨洪磊,王子琨.砂浆对固结磨具研磨垫研磨SiC工件的影响[J].金刚石与磨料磨具工程,2018,38(6):54-60. |
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| 作者姓名： | 金振弘 朱永伟 墨洪磊 王子琨 |
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| 作者单位： | 1. 南京航空航天大学 机电学院, 江苏省精密与微细制造技术重点实验室, 南京 210016;2. 航天八院803研究所, 上海 201109 |
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| 基金项目： | 国家自然科学基金（No.51675276）；江苏省精密与微细制造技术重点实验室。 |
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| 摘 要： | 为高效、稳定加工SiC工件，采用碳化硅砂浆辅助亲水性固结磨具研磨垫精研的方法，实验比较砂浆辅助固结磨具研磨垫研磨与传统固结磨具研磨垫研磨的差异，并研究砂浆中碳化硅的颗粒尺寸和质量分数对SiC工件精研去除率和表面形貌的影响。通过测算研磨垫的溶胀率和磨损率，探索碳化硅砂浆的作用机制。结果表明:在砂浆中添加颗粒尺寸为3~5 μm、质量分数为3%的SiC时，精研过程的平均材料去除率为1.424 6 μm/min，工件表面粗糙度Ra为84.6 nm；而没有砂浆辅助精研时，材料去除率为0.040 0 μm/min，表面粗糙度Ra为61.4 nm。碳化硅砂浆的加入能有效提高亲水性固结磨具研磨垫的自修整能力，其自修整能力随砂浆中碳化硅的尺寸和质量分数增大而增强，材料的去除率提高，工件表面质量略降。
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| 关 键 词： | 亲水性固结磨具研磨垫 碳化硅砂浆 自修整 辅助精研 |
Influence of slurry on lapping SiC workpiece by using fixed abrasives |
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| JIN Zhenhong,ZHU Yongwei,MO Honglei,WANG Zikun.Influence of slurry on lapping SiC workpiece by using fixed abrasives[J].Diamond & Abrasives Engineering,2018,38(6):54-60. |
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| Authors: | JIN Zhenhong ZHU Yongwei MO Honglei WANG Zikun |
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| Affiliation: | 1. Jiangsu Key Laboratory of Precision and Micro-manufacturing Technology, College of Mechanical andElectrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;2. 803 Institute Shanghai Academy of Spaceflight Technology, Shanghai 201109, China |
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| Abstract: | For efficient and stable machining the SiC workpiece, slurries containing SiC particles are used to assist precision lapping SiC with hydrophilic fixed abrasive pad. Experiments are conducted to compare the difference of slurry-assisted lapping and traditional lapping, as well as the influence of the size and concentration of SiC particles in the slurry on the material removal rate and surface of SiC workpiece after precision lapping. The swelling rate and wear rate of pad matrix are tested and calculated, thus exploring the mechanism of SiC slurry. The results show that when adding SiC sized 3-5 μm with mass fraction 3% in to the slurry, the average material removal rate of precision lapping is 1.424 6 μm/min with surface roughness of workpiece 84.6 nm, while the rate and roughness of traditional lapping are 0.040 0 μm/min and 61.4 nm, respectively. In conclusion, adding SiC particles could enhance the self-dressing of the pad. As the size and concentration of SiC particles increase, the self-dressing effect is enhanced, resulting in higher material removal rate but slightly poorer surface quality. |
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