首页 | 官方网站   微博 | 高级检索  
     

环形光源激发超声进行缺陷检测的数值研究
引用本文:周航,张斌,冯其波,崔建英,梁晨,黄悦朗.环形光源激发超声进行缺陷检测的数值研究[J].激光技术,2021,45(2):168-173.
作者姓名:周航  张斌  冯其波  崔建英  梁晨  黄悦朗
作者单位:北京交通大学 发光与光信息技术教育部重点实验室,北京100044
摘    要:为了提高激光超声的激发效率且不对被测表面造成损伤,改变了光源的空间分布,采用脉冲激光环形光源激发超声及有限元方法, 应用多物理场耦合软件,对铝板中激发的超声全场波形进行了数值模拟,研究了环形光源中轴线上叠加横波的激发特性随激光参量而变化的规律,并与点光源激发超声进行对比。通过模拟缺陷所导致超声场的变化规律,提出一种环光源双面扫描检测裂纹的方法,验证了利用叠加横波特性进行缺陷检测的可行性和有效性。结果表明,使用环形光源,其光源损耗常在50%以下,可大大提高激发效率,横波传播方向稳定,叠加深度与光环半径有关,而环半宽则会影响叠加横波强度。该研究结果对环形光源激发超声应用于缺陷检测提供了参考。

关 键 词:测量与计量    激光超声    环形光源    数值模拟    超声波
收稿时间:2020-04-17

Numerical study on defect detection by ring light source generated ultrasonic
Abstract:In order to improve the generation efficiency of laser ultrasonic without damaging the measured surface, the spatial distribution of the laser source was changed, and the pulsed ring laser source was used. Using the finite element method, the numerical simulation of the full field ultrasonic wave generated in the aluminum plate was carried out by COMSOL Multiphysics. The generation characteristics of the superposition shear wave on the central axis of the ring laser source were studied, which vary with laser parameters. By simulating the change law of the ultrasonic field caused by defects, a method of detecting cracks on both sides of the ring laser source was proposed. The feasibility and effectiveness of defect detection by superposition shear wave were verified by simulating the change rule of ultrasonic field caused by defects. The results show that the generation efficiency can be significantly improved by using the ring laser source because ring light source loss is usually less than 50%. The direction of shear wave propagation is stable. The superposition depth of the shear wave is related to the ring radius, and the ring half-width can affect the intensity of the wave. The results provide a reference for the application of ring laser source generated ultrasonic in defect detection.
Keywords:
点击此处可从《激光技术》浏览原始摘要信息
点击此处可从《激光技术》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号