| 后摩尔时代晶体管：新兴材料与尺寸极限 |
| |
| 引用本文： | 秦敬凯,甄良,徐成彦.后摩尔时代晶体管：新兴材料与尺寸极限[J].自然杂志,2006,42(3):221-230. |
| |
| 作者姓名： | 秦敬凯 甄良 徐成彦 |
| |
| 作者单位： | 哈尔滨工业大学(深圳) 材料科学与工程学院，广东 深圳 518055 |
| |
| 基金项目： | 国家自然科学基金项目(51572057、51772064) |
| |
| 摘 要： | 在后摩尔时代，大规模半导体集成电路对功耗和集成密度的要求使得晶体管器件的开发需要在“材料、制程、结构”三个维度同步推进。文章详细梳理了近年来涌现的新兴低维半导体材料及异质结构，包括碳纳米管、过渡族金属硫属化合物、黑磷、碲烯和一维/二维范德华异质结等，并对其电学物理特性进行了深入的讨论，同时总结了这些材料在14 nm工艺节点以下超短沟道晶体管和新结构晶体管器件方面的最新进展，最后从材料角度对半导体逻辑器件的进一步发展指出方向。
|
| 关 键 词： | 后摩尔时代 低维半导体材料 范德华异质结 短沟道效应 场效应晶体管 |
| 收稿时间： | 2020-04-25 |
Field effect transistor in post-Moore era: emerging materials and size limit |
| |
| QIN Jingkai,ZHEN Liang,XU Chengyan.Field effect transistor in post-Moore era: emerging materials and size limit[J].Chinese Journal of Nature,2006,42(3):221-230. |
| |
| Authors: | QIN Jingkai ZHEN Liang XU Chengyan |
| |
| Affiliation: | School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, Guangdong Province, China; |
| |
| Abstract: | In the post-Moore era, advanced transistor technology in terms of “materials, process and configuration” needs surgentlyto meet the requirements of power consumption and integration density for large-scale integrated circuit (IC). We herein present a succinct and critical survey of the emerging low-dimensional semiconducting materials for field-effect transistors (FETs), including carbon nanotubes (CNTs), transition metal dichalcogenides (TMDCs), black phosphorus (B-P), tellurene, and related one/twodimensional
van der Waals heterostructures. Recent research advances of novel FETs below 14 nm node on basis of these materials are also reviewed. In the end, the prospects for future research opportunities as well as accompanying challenges of low-dimensional semiconducting materials are summarized and highlighted. |
| |
| Keywords: | |
|
| 点击此处可从《自然杂志》浏览原始摘要信息 |
|
点击此处可从《自然杂志》下载全文 |
