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MEMS F-P 干涉型压力传感器
引用本文:江小峰,林春,谢海鹤,黄元庆,颜黄苹.MEMS F-P 干涉型压力传感器[J].红外与激光工程,2014,43(7):2257-2262.
作者姓名:江小峰  林春  谢海鹤  黄元庆  颜黄苹
作者单位:1.厦门大学物理机电学院,福建厦门 361005
基金项目:福建省自然科学基金(2013J01251)
摘    要:为了满足工业、航天、国防等领域对微型化压力传感器的需求,提出了基于微机电系统(MEMS,Micro electromechanical System)技术制作的非本征型光纤法布里-珀罗(F-P)压力传感器,该传感器传感头由全玻璃材料构成。主要研究了MEMS 技术制作全玻璃结构式压力传感器工艺,结合溅射、光刻、腐蚀等工艺在7 740 wafer 基底上制作出F-P 腔体,利用低压化学气相沉积(LPCVD)的方法在基底上沉积一层40 nm 的非晶硅作为中间层。通过阳极键合技术在温度400℃下完成玻璃与玻璃的键合,并搭建了该传感器的压力测量平台。实验结果表明:在压力线性范围0~400 kPa 内传感器具有很高的重复性,达到0.3%。灵敏度达到1.764 nm/kPa;在传感器使用范围0~80℃内,热敏感系数为 0.15 nm/℃。该传感器的研究对设计制作改善了该类传感器的热膨胀失配问题,对低温漂型压力传感器的研究有一定参考价值。

关 键 词:光纤传感器    MEMS    全玻璃材料    F-P  腔制作
收稿时间:2013-11-20

MEMS F-P interferometry pressure sensor
Affiliation:1.School of Physics and Mechanical & Electrical Engineering,Xiamen University,Xiamen 361005,China
Abstract:In order to meet the requirements of industry, aerospace and defense for miniature pressure sensors, an optical F-P interferometry pressure sensor which was made from all-glass material was presented, the sensor head of which was made from all-glass material. The processing steps of MEMS craft for fabrication of the all-glass optical pressure sensor were studied mainly, F-P cavity was made on 7 740 wafer based on sputtering, photolithography and etching technology, a 40 nm thick amorphous silicon layer deposited by low-pressure chemical vapor deposition (LPCVD) on this wafer was used as an intermediate layer. Then glass-to-glass anodic bonding was finished under the temperature of 380. Finally, the pressure measurement system was established. The experiment result shows that a high repeatability in the range of 0-400 kPa pressure and a reasonable sensitivity of 1.764 nm/kPa have been obtained in this pressure sensor. The temperature-sensitivity coefficient of the sensor was about 0.15 nm/℃ in the range of 0-80℃. The study of the pressure sensor would be of utility value for design and fabrication of low temperature drift typed pressure sensor.
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