| 新型SiO2栅介质非晶硅薄膜晶体管室温红外探测器 |
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| 引用本文： | 刘兴明,韩琳,刘理天.新型SiO2栅介质非晶硅薄膜晶体管室温红外探测器[J].红外与激光工程,2006,35(6):764-766,770. |
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| 作者姓名： | 刘兴明 韩琳 刘理天 |
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| 作者单位： | 清华大学,微电子学研究所,北京,100084 |
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| 摘 要： | 对用作室温红外探测敏感单元的非晶硅薄膜晶体管进行了研究，提出了一种新型SiO2栅介质非晶硅薄膜晶体管室温红外探测器。该探测器的基本工作机理与传统的SiN2栅介质薄膜晶体管相类似，但在器件性能方面不仅具有较高的响应度，而且具有更好的温度稳定性；在制作工艺方面具有更高的工艺重复性和栅介质淀积的均匀性。
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| 关 键 词： | 非晶硅薄膜晶体管 室温红外探测器 SiO2栅介质 |
| 文章编号： | 1007-2276（2006）06-0764-03 |
| 收稿时间： | 2006-01-15 |
| 修稿时间： | 2006-01-152006-02-20 |
New type of SiO2 gate insulator a-Si TFT uncooled infrared detector |
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| LIU Xing-ming,HAN Lin,LIU Li-tian.New type of SiO2 gate insulator a-Si TFT uncooled infrared detector[J].Infrared and Laser Engineering,2006,35(6):764-766,770. |
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| Authors: | LIU Xing-ming HAN Lin LIU Li-tian |
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| Affiliation: | Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| Abstract: | The amorphous silicon(a-Si) thin film transistor(TFT) is studied and used as uncooled infrared(IR) detector.A new type of SiO2 gate insulator a-Si TFT uncooled infrared detector is presented.The basic mechanism of SiO2 gate insulator a-Si TFT uncooled infrared detector is similar to that of conventional SiNx gate insulator a-Si TFT.The detector has high responsivity and temperature stability in performance.It also has the advantage of preferable technique repetition and gate insulator deposition uniformity. |
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| Keywords: | A-Si TFT Uncooled infrared detector SiO2 gate insulator |
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