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Development of flexible displays using back‐channel‐etched In–Sn–Zn–O thin‐film transistors and air‐stable inverted organic light‐emitting diodes |
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| Authors: | Mitsuru Nakata Genichi Motomura Yoshiki Nakajima Tatsuya Takei Hiroshi Tsuji Hirohiko Fukagawa Takahisa Shimizu Toshimitsu Tsuzuki Yoshihide Fujisaki Toshihiro Yamamoto |
| Affiliation: | NHK Science & Technology Research Laboratories, Setagaya, Tokyo, Japan |
| Abstract: | We developed flexible displays using back‐channel‐etched In–Sn–Zn–O (ITZO) thin‐film transistors (TFTs) and air‐stable inverted organic light‐emitting diodes (iOLEDs). The TFTs fabricated on a polyimide film exhibited high mobility (32.9 cm2/Vs) and stability by utilization of a solution‐processed organic passivation layer. ITZO was also used as an electron injection layer (EIL) in the iOLEDs instead of conventional air‐sensitive materials. The iOLED with ITZO as an EIL exhibited higher efficiency and a lower driving voltage than that of conventional iOLEDs. Our approach of the simultaneous formation of ITZO film as both of a channel layer in TFTs and of an EIL in iOLEDs offers simple fabrication process. |
| Keywords: | flexible display oxide semiconductor back‐channel‐etched TFT ITZO solution‐processed passivation layer inverted OLED |
