| 多层GaN外延片表面热应力分布及影响因素 |
| |
| 引用本文： | 陈靖,程宏昌,吴玲玲,冯刘,苗壮.多层GaN外延片表面热应力分布及影响因素[J].红外与激光工程,2016,45(10):1021001-1021001(6). |
| |
| 作者姓名： | 陈靖 程宏昌 吴玲玲 冯刘 苗壮 |
| |
| 作者单位： | 1.微光夜视技术重点实验室,陕西 西安 710065; |
| |
| 基金项目： | 微光夜视技术重点实验室基金（BJ2014004）;西安工业大学校长基金（01001302） |
| |
| 摘 要： | 为了研究蓝宝石/AlN/GaN外延片表面层热应力分布及影响因素，以直径d为40 mm的外延片为研究对象，利用有限元分析法对其表面热应力分布进行了理论计算和仿真，验证了仿真模型的合理性。分析了外延片生长温度、蓝宝石衬底和AlN过渡层厚度对表面热应力的影响。结果显示:在1 200℃的生长温度下，外延片径向应力比轴向应力大一个量级；在径向（d32 mm）区域内的热应力分布比较均匀，热应力变化范围为0.38%；生长温度在600~1 200℃范围内，外延层表面应力与生长温度呈近似正比关系。研究成果可为该类外延片生长工艺研究和低应力外延片的筛选标准制定提供借鉴。
|
| 关 键 词： | 热应力 氮化镓外延层 有限元分析 仿真 |
| 收稿时间： | 2016-02-17 |
Surface thermal stress distribution and the influence factors of Sapphire/AlN/GaN epilayers |
| |
| Affiliation: | 1.Science and Technology on Low-Light-Level Night Vision Laboratory,Xi'an 710065,China;2.Institute of Optoelectronic Engineering,Xi'an Technological University,Xi'an 710021,China |
| |
| Abstract: | In order to research the surface thermal stress in Sapphire/AlN/GaN epilayer and the stress influence factor, the surface stress in materials with diameter of 40 mm were respectively calculated and studied by the finite element modeling method, and the rationality of the model was proved. The dependence between the epilayer surface thermal stress and different parameters were respectively analyzed including growth temperature, AlN transition layer thickness and Sapphire substrate thickness. The results indicated that the epilayer radial stress was an order of magnitude greater than the epilayer axial stress on 1 200℃; and the stress was uniform in the radial direction with the variation of 0.38% in the area with diameter of 32 mm; the epilayer surface thermal stress was in direct proportion to growth temperature during the temperature from 600℃ to 1 200℃. The results are helpful for study on new technology of epitayers growth and establish the quality choice standard of low stress epilayer. |
| |
| Keywords: | |
|
| 点击此处可从《红外与激光工程》浏览原始摘要信息 |
|
点击此处可从《红外与激光工程》下载全文 |
|
