| 窄线宽半导体激光器件 |
| |
| 引用本文： | 罗毅,黄缙,孙长征.窄线宽半导体激光器件[J].红外与激光工程,2007,36(2):147-151. |
| |
| 作者姓名： | 罗毅 黄缙 孙长征 |
| |
| 作者单位： | 清华大学,电子工程系,集成光电子学国家重点实验室,北京,100084 |
| |
| 基金项目： | 国家自然科学基金
,
国家重点基础研究发展计划(973计划) |
| |
| 摘 要： | 分布反馈半导体激光器的线宽一般较大，难以满足光纤传感等领域的要求。根据C.H. Henry于1982年提出的半导体激光器的线宽理论，通过适当设计DFB半导体激光器的腔长、耦合系数、微分增益、光限制因子，能有效地减小激光器的线宽。同时，空间烧孔现象也可限制DFB半导体激光器的线宽，为此需要合理设计光栅结构。在此基础上，DFB激光器的线宽能达到几十千赫兹的量级。此外，采用DBR结构或者外腔结构，也可以获得相当窄的线宽。
|
| 关 键 词： | 窄线宽 DFB激光器 DBR激光器 外腔激光器 |
| 文章编号： | 1007-2276(2007)02-0147-05 |
| 收稿时间： | 2006/8/25 |
| 修稿时间： | 2006-08-25 |
Narrow linewidth semiconductor laser diodes |
| |
| LUO Yi,HUANG Jin,SUN Chang-zheng.Narrow linewidth semiconductor laser diodes[J].Infrared and Laser Engineering,2007,36(2):147-151. |
| |
| Authors: | LUO Yi HUANG Jin SUN Chang-zheng |
| |
| Affiliation: | State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China |
| |
| Abstract: | The linewidth of distributed feedback (DFB) semiconductor lasers is usually too wide to meet the requirement of fiber-optic sensing. According to the linewidth theory of semiconductor lasers proposed by C. H. Henry in 1982, reduced linewidth can be obtained with proper design of key parameters of a DFB laser, such as cavity length, coupling coefficient, differential gain and optical confinement factor. Meanwhile, spatial-hole-burning is also detrimental to linewidth-narrowing, and special care must be paid to grating structure design to achieve narrow linewidth. By taking the above issues into consideration, DFB semiconductor lasers with a linewidth of 10-kHz have been demonstrated. In addition, ultra-narrow linewidth can be also realized by adopting DBR structure or external cavity structure. |
| |
| Keywords: | Narrow linewidth DFB lasers DBR lasers External cavity lasers |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《红外与激光工程》浏览原始摘要信息 |
|
点击此处可从《红外与激光工程》下载全文 |
|
