高功率905 nm InGaAs隧道结串联叠层半导体激光器 |
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引用本文: | 李辉,曲轶,张剑家,辛德胜,刘国军.高功率905 nm InGaAs隧道结串联叠层半导体激光器[J].强激光与粒子束,2013,25(10):2517-2520. |
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作者姓名: | 李辉 曲轶 张剑家 辛德胜 刘国军 |
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作者单位: | 1.长春理工大学 高功率半导体激光国家重点实验室, 长春 1 30022 |
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摘 要: | 设计出了隧道结串联叠层半导体激光器结构,采用分子束外延进行激光器材料的外延生长,材料经过光刻、腐蚀、欧姆接触、解理、腔面镀高反射/减反射膜、焊装等工艺,制作成条宽200 m、腔长800 m 的半导体激光器。两隧道结激光器在脉冲宽度100 ns,重复频率10 kHz,30 A工作电流下输出功率达到80 W,峰值发射波长为905.6 nm,器件的阈值电流为0.8 A,水平和垂直方向的发散角分别为7.8和25。
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关 键 词: | 高功率 应变量子阱 隧道结 半导体激光器 |
收稿时间: | 2012-12-13 |
High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers |
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Affiliation: | 1.National Key Laboratory of Science and Technology on High Power Semiconductor Lasers,Changchun University of Science and Technology,Changchun 130022,China |
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Abstract: | We designed the structure of tunnel junction series stacked semiconductor lasers and grew the laser materials by molecular beam epitaxy (MBE). We fabricated the 200 m wide, 800 m cavity length laser diode chips by the process of photo-lithography, etching, Ohmic contact, cleaving, AR/HR coating and die bonding. The output power of the two-tunnel-junction device reaches 80 W under the condition of 100 ns pulsed width, 10 kHz repeat frequency, and 30 A pulsed current. The threshold current is about 0.8 A, the peak of spectrum is 905.6 nm, and the far-field divergence in the directions parallel to junction plane and perpendicular to junction plane is 7.8 and 25, respectively. |
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