| 基于忆阻器的SRAM存储单元设计 |
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| 引用本文： | 徐红梅,李浩申,刘苡萌.基于忆阻器的SRAM存储单元设计[J].延边大学理工学报,2022,0(3):222-228. |
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| 作者姓名： | 徐红梅 李浩申 刘苡萌 |
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| 作者单位： | (延边大学 工学院, 吉林 延吉 133002) |
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| 摘 要： | 为了突破冯?诺依曼架构瓶颈,实现存算一体的存储功能,利用D锁存器设计了一种忆阻器存储单元.该忆阻器存储单元由忆阻器基本逻辑与门、或门和MeMOS电路组成.PSpice仿真显示,该忆阻器存储单元不仅可以实现非易失性存储功能,而且具有体积小、功耗低、结构简单等优点,可为实现非易失性存储单元提供良好参考.
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| 关 键 词： | 忆阻器 SRAM存储单元 GDI逻辑电路 D锁存器 |
Memristor - based SRAM memory design |
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| XU Hongmei,LI Haoshen,LIU Yimeng.Memristor - based SRAM memory design[J].Journal of Yanbian University (Natural Science),2022,0(3):222-228. |
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| Authors: | XU Hongmei LI Haoshen LIU Yimeng |
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| Affiliation: | (College of Engineering, Yanbian University, Yanji 133002, China) |
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| Abstract: | In order to break through the bottleneck of von Neumann architecture and realize the memory function of memory and calculation, a memristor memory cell is designed by using D latch.The memory cell of the memristor consists of the basic logic and gate of the memristor, or gate and MeMOS circuit.PSpice simulation shows that the memristor memory cell can not only realize the nonvolatile memory function, but also has the advantages of small size, low power consumption, simple structure and so on, which can provide a good reference for the realization of nonvolatile memory cells. |
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| Keywords: | memristor SRAM memory cell GDI logic circuit D latch |
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