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紫外光催化振动复合抛光
引用本文:于保军,郭桌一,卢发祥,谷岩,林洁琼.紫外光催化振动复合抛光[J].红外与激光工程,2022,51(11):20220138-1-20220138-7.
作者姓名:于保军  郭桌一  卢发祥  谷岩  林洁琼
作者单位:长春工业大学 机电工程学院,吉林 长春 130012
基金项目:吉林省重点实验室专项和主题科学家专项(20190201254JC)
摘    要:为了满足工业领域的不同要求,研究了碳化硅(SiC)陶瓷超光滑表面且无表面损伤的抛光工艺,提出了一种紫外光催化振动复合抛光新方法。基于紫外光催化反应理论,论述了光催化振动复合抛光的加工机理,进行了不同的实验。首先进行了甲基橙降解实验,研究了光催化振动复合抛光氧化性对振动的依赖关系;接着进行了紫外光催化振动复合抛光对比实验,研究了振动前后SiC的抛光效果,验证了新抛光方法的有效性。实验结果表明,光催化反应生成的强氧化性羟基自由基能够将高硬度的SiC氧化成质地较软的二氧化硅,振动的引入减少了光催化反应中光催化剂的团聚,提高了抛光过程中氧化和去除的均匀性,从而提高了抛光过程中SiC的表面质量,最终获得了粗糙度为31~39 nm的光滑表面。

关 键 词:复合抛光    紫外光    振动    碳化硅陶瓷    团聚
收稿时间:2022-03-04

Ultraviolet photocatalytic-vibrated composite polishing
Affiliation:School of Mechatronic Engineering, Changchun University of Technology, Changchun 130012, China
Abstract:In order to meet the different requirements of the industrial field, the polishing process of silicon carbide (SiC) ceramic with an ultra-smooth surface and no surface damage is studied, and a new method of ultraviolet photocatalytic-vibrated composite polishing is proposed. Based on the theory of ultraviolet photocatalytic reaction, the processing mechanism of photocatalytic-vibrated composite polishing was discussed, and different experiments were carried out. First, the methyl orange degradation experiment was carried out to study the dependence of the oxidative property of photocatalytic vibration composite polishing on vibration; then, the ultraviolet photocatalytic-vibrated composite polishing comparison experiment was carried out to study the polishing effect of SiC before and after vibration, and to verify the new polishing method’s effectiveness. The experimental results show that the strong oxidizing hydroxyl radicals generated by the photocatalytic reaction can oxidize high-hardness SiC into softer silica. The introduction of vibration not only reduces the agglomeration of the photocatalyst in the photocatalytic reaction, but also improves the uniformity of oxidation and removal, and thus improves the surface quality of SiC during polishing, and finally, a smooth surface with a roughness of 31–39 nm is obtained.
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