| 单晶SiC基片的铜基研磨盘加工特性研究! |
| |
| 引用本文： | 梁华卓,路家斌,阎秋生.单晶SiC基片的铜基研磨盘加工特性研究![J].金刚石与磨料磨具工程,2016,36(6):6-10,14. |
| |
| 作者姓名： | 梁华卓 路家斌 阎秋生 |
| |
| 作者单位： | 广东工业大学 机电工程学院, 广州 510006 |
| |
| 基金项目： | 国家自然科学基金（51375097和51305082）；广东省自然科学基金重点项目（2015A030311044） |
| |
| 摘 要： | 采用铜基螺旋槽研磨盘对6H-SiC单晶基片的Si面和C面进行了单面研磨加工，研究研磨压力、研磨盘转速和金刚石磨粒尺寸对SiC基片材料去除率和表面粗糙度的影响。结果表明，单晶SiC的C面和Si面具有明显的差异性，C面更易加工，其材料去除率比Si面大。研磨压力是影响材料去除率和表面粗糙度的主要原因，研磨压力越大，材料去除率越高，但同时表面粗糙度变大，较大的研磨压力会导致划痕的产生。在达到最佳表面粗糙度时，C面加工所需的转速比Si面大。磨粒团聚会严重影响加工表面质量，采用粒度尺寸3 μm的金刚石磨料比采用粒度尺寸1 μm的金刚石效果好，经粒度尺寸3 μm的金刚石磨料研磨加工5 min后，Si面从原始粗糙度Ra 130 nm下降到Ra 5.20 nm，C面下降到Ra 5.49 nm，表面质量较好。
|
| 关 键 词： | 6H-SiC基片 金刚石磨料 铜基研磨盘 表面质量 |
Machining characteristics of single crystal SiC wafer with copper lapping pad |
| |
| LIANG Huazhuo,LU Jiabin,YAN Qiusheng.Machining characteristics of single crystal SiC wafer with copper lapping pad[J].Diamond & Abrasives Engineering,2016,36(6):6-10,14. |
| |
| Authors: | LIANG Huazhuo LU Jiabin YAN Qiusheng |
| |
| Affiliation: | School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, China |
| |
| Abstract: | The Siface and C face of 6H-SiC single crystal wafer were lapped by using the copper based lapping pad with spiral grooves and the effects of lapping pressure,pad speed and abrasive size on the material removal rate and the surface roughness of SiC were studied. The results show that the lapping characteristics of C face and Siface have obvious difference. The C face is easier to lap and the material removal rate of C face is larger than that of the Siface. The lapping pressure is a key parameter that influences material removal rate and surface roughness. The higher the lapping pressure is,the larger the material removal rate is,but the surface roughness Ra increases as well. High lapping pressure can generate scratches on SiC surface. To achieve a better surface roughness,the lapping speed of the C face should be faster than that of the Siface. It's also found that agglomeration of the diamond abrasives will seriously affect the quality of the lapped surface. Therefore,the lapping quality of SiC surface with 3 μm diamond abrasive is better than that with 1 μm diamond abrasive. After lapping for 5 min with 3 μm diamond abrasive,the surface roughness of Siface decreases from original Ra 130 nm to Ra 5.20 nm,and the surface roughness of the C face decreases to Ra 5.49 nm. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《金刚石与磨料磨具工程》浏览原始摘要信息 |
|
点击此处可从《金刚石与磨料磨具工程》下载全文 |
|
