Research progress on modification strategy of g-C3N4 and g-C3N4/Ti3C2 heterojunction |
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| Authors: | Danyang SUN Tingting ZHAI Hansheng LI Wenfang LIU |
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| Affiliation: | School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 102488, China |
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| Abstract: | Graphite phase carbon nitride (g-C3N4) is a kind of metal-free semiconductor material with a forbidden band width of about 2.7 eV and has visible light response capability. Attributed to its good thermal and chemical stability, adjustable morphology and chemical structure, it is widely used in the field of photocatalysis. However, due to its low specific surface area and wide band gap, its response range to visible light is narrow and the recombination rate of photogenerated carriers is high, resulting in a low photocatalytic efficiency, which can be effectively improved by modification. The two-dimensional material Ti3C2 has a narrower band gap compared with other semiconductor materials, and the heterogeneous junction between Ti3C2 and g-C3N4 is expected to obtain a wider range of visible light absorption and higher photocatalytic efficiency. This article reviews the modification methods of g-C3N4 including morphology control, doping and constructing heterojunctions, as well as the action mechanism, preparation methods and applications of g-C3N4/Ti3C2 heterojunction in photocatalytic hydrogen evolution, organics degradation and synthesis, etc. |
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| Keywords: | modification catalyze composite material activity g-C3N4/Ti3C2 |
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