| 实现外腔半导体激光器连续调谐的两个基本要求 |
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| 引用本文： | 周小红,李大义.实现外腔半导体激光器连续调谐的两个基本要求[J].激光技术,1997,21(5):302-306. |
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| 作者姓名： | 周小红 李大义 |
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| 作者单位： | 1.四川大学光电系, 成都, 610064 |
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| 摘 要： | 定量讨论了实现外腔式半导体激光器连续调谐的两个基本要求:同时改变外腔长度及光栅反射波长,半导体激光器(LD)端面镀减反膜。分析表明:前人给出外腔的可调整范围并非是实现最大调谐范围的必要条件,而是实现调谐连续性的一种可行选择。针对具体的减反射膜,对在ECLD上可能实现的连续调谐范围进行了研究。
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| 关 键 词： | 外腔半导体激光器 调谐 |
| 收稿时间： | 1996-04-29 |
| 修稿时间： | 1996-10-05 |
Two fundamental requirements for realization of continuously tuning external cavity semiconductor lasers |
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| Zhou Xiaohong,Li Dayi,Chen Jianguo,Lu Yucun.Two fundamental requirements for realization of continuously tuning external cavity semiconductor lasers[J].Laser Technology,1997,21(5):302-306. |
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| Authors: | Zhou Xiaohong Li Dayi Chen Jianguo Lu Yucun |
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| Abstract: | Two fundamental requirements on the simultaneous adjustments of the grating reflection wavelength and cavity length,antireflection coating stacked on the rear facet of the semiconductor laser(LD) have been discussed quantitatively in order to realize a continuous tuning in an external semiconductor lasers.Studies indicate that the reported adjustable range of the cavity length is not a precondition for achieving the maximum tuning range ,but rather a condition for practically achieving a continuous tuning.For certain antireflection coating stacked on the rear facet of the diode,the achievable continuous tuning range has been investigated. |
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| Keywords: | external cavity semiconductor laser wavelength tuning |
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